FR2987844A1 - Reactor, useful for depositing thin layers or etching layers, comprises enclosure provided with pumping unit, and substrate holder including opening facing heating unit so that substrate holder is not in contact with rear face of substrate - Google Patents

Reactor, useful for depositing thin layers or etching layers, comprises enclosure provided with pumping unit, and substrate holder including opening facing heating unit so that substrate holder is not in contact with rear face of substrate Download PDF

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Publication number
FR2987844A1
FR2987844A1 FR1200683A FR1200683A FR2987844A1 FR 2987844 A1 FR2987844 A1 FR 2987844A1 FR 1200683 A FR1200683 A FR 1200683A FR 1200683 A FR1200683 A FR 1200683A FR 2987844 A1 FR2987844 A1 FR 2987844A1
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FR
France
Prior art keywords
substrate
substrate holder
heating unit
opening
reactor
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Granted
Application number
FR1200683A
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French (fr)
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FR2987844B1 (en
Inventor
Franck Pouch
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ATON IND
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ATON IND
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Priority to FR1200683A priority Critical patent/FR2987844B1/en
Publication of FR2987844A1 publication Critical patent/FR2987844A1/en
Priority to FR1400215A priority patent/FR3000503A1/en
Application granted granted Critical
Publication of FR2987844B1 publication Critical patent/FR2987844B1/en
Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

Abstract

The reactor comprises an enclosure (ENC) provided with a pumping unit (PV), a substrate holder and a heating unit (IR). The substrate holder has an opening facing the heating unit so that the substrate holder is not in contact with a rear face of a substrate. The heating unit is arranged in the enclosure compared to the opening. The reactor further comprises a protection plate (PP) interposed between the opening and the heating unit. The plate is transparent with the radiation of the heating unit. The reactor comprises an enclosure (ENC) provided with a pumping unit (PV), a substrate holder and a heating unit (IR). The substrate holder has an opening facing the heating unit so that the substrate holder is not in contact with a rear face of a substrate. The heating unit is arranged in the enclosure compared to the opening. The reactor further comprises a protection plate (PP) interposed between the opening and the heating unit. The plate is transparent with the radiation of the heating unit. The heating unit is arranged outside the enclosure and behind a port-hole in front of the opening. The substrate holder takes a shape of a frame provided with an internal edge designed to retain the substrata and takes a shape of two plates (T1, T2) between which the opening is formed and the substrate rests on the plates.

Description

Réacteur pourvu d'un porte-substrat ouvert La présente invention concerne un réacteur pourvu d'un porte-substrat ouvert. Le domaine de l'invention est celui des réacteurs agencés dans une 5 chambre à vide. Ces réacteurs sont prévus pour les traitements les plus divers, par exemple pour le dépôt de couches minces ou la gravure de telles couches. On pense naturellement aux réacteurs pyrolytiques destinés à la croissance de couches sur un substrat à partir d'un composé volatile. Le document US 4,503,807 enseigne un appareil de dépôt chimique en 10 phase vapeur (CVD pour « Chemical Vapor Deposition » en anglais). Cet appareil comporte une enceinte munie d'un moyen de pompage, enceinte dans laquelle figure un porte-substrat. Le porte-substrat se présente comme un support monté sur un plateau pourvu d'une fenêtre. Il est fixé en regard d'un hublot agencé à la base de l'enceinte. Un moyen de chauffage par rayonnement 15 est disposé face à ce hublot. Ainsi, le substrat est chauffé indirectement par le porte-substrat qui est soumis au rayonnement de chauffage. Le chauffage du porte-substrat produit des contraintes mécaniques au niveau de sa fixation. De plus, il contribue à dégrader le rendement thermique car la plupart de l'énergie fournie par le moyen de chauffage est emmagasinée 20 par le porte-substrat plutôt que par le substrat luï-même. La présente invention a ainsi pour objet de limiter considérablement le chauffage du porte-substrat. Selon l'invention, un réacteur comporte une enceinte munie d'un moyen de pompage, un porte-substrat, et un moyen de chauffage par rayonnement ; de 25 plus, ce porte-substrat présente une ouverture en regard du moyen de chauffage de sorte qu'il ne soit pas en contact avec la face arrière d'un substrat si ce n'est à la périphérie de ce substrat. Ainsi, le rayonnement atteint le substrat en passant par l'ouverture. Suivant une première option, le moyen de chauffage est agencé dans 30 l'enceinte en regard de l'ouverture. De préférence, le réacteur comporte de plus une plaque de protection interposée entre l'ouverture et le moyen de chauffage, cette plaque étant transparente au rayonnement de ce moyen de chauffage. Cette plaque transparente protège le moyen de chauffage. Elle peut être 35 nettoyée ou même remplacée.The present invention relates to a reactor provided with an open substrate holder. The field of the invention is that of reactors arranged in a vacuum chamber. These reactors are intended for the most diverse treatments, for example for the deposition of thin layers or the etching of such layers. Pyrolytic reactors for the growth of layers on a substrate from a volatile compound are naturally thought of. US 4,503,807 teaches a Chemical Vapor Deposition (CVD) apparatus. This apparatus comprises an enclosure provided with a pumping means, an enclosure in which there is a substrate holder. The substrate holder is a support mounted on a tray provided with a window. It is fixed next to a window arranged at the base of the enclosure. Radiant heating means 15 is arranged facing this porthole. Thus, the substrate is heated indirectly by the substrate holder which is subjected to the heating radiation. The heating of the substrate holder produces mechanical stresses at its fixation. In addition, it helps to degrade the thermal efficiency since most of the energy supplied by the heating means is stored by the substrate holder rather than by the substrate itself. The present invention thus has the object of considerably limiting the heating of the substrate holder. According to the invention, a reactor comprises an enclosure provided with a pumping means, a substrate holder, and a radiant heating means; in addition, this substrate holder has an opening facing the heating means so that it is not in contact with the rear face of a substrate except at the periphery of this substrate. Thus, the radiation reaches the substrate through the opening. According to a first option, the heating means is arranged in the enclosure facing the opening. Preferably, the reactor further comprises a protective plate interposed between the opening and the heating means, this plate being transparent to the radiation of this heating means. This transparent plate protects the heating means. It can be cleaned or even replaced.

Suivant une seconde option, le moyen de chauffage est agencé à l'extérieur de l'enceinte, derrière un hublot qui figure en regard de l'ouverture. Avantageusement, lorsque le substrat est rigide, le porte-substrat prend la forme d'un cadre muni d'une bordure interne prévue pour retenir le substrat.According to a second option, the heating means is arranged outside the enclosure, behind a window which appears opposite the opening. Advantageously, when the substrate is rigid, the substrate carrier takes the form of a frame provided with an internal edge provided for retaining the substrate.

Alternativement, si le substrat est souple, le porte-substrat prend la forme de deux plateaux entre lesquels figure l'ouverture, le substrat venant en appui sur ces plateaux. La présente invention apparaîtra maintenant avec plus de détails dans le cadre de la description qui suit d'exemples de réalisation donnés à titre illustratif en se référant aux figures annexées qui représentent : - la figure 1, un schéma en coupe d'un premier mode de réalisation d'un réacteur selon l'invention, - la figure 2, un schéma en perspective d'un porte-substrat destiné à des substrats souples, et - la figure 3, un schéma en coupe d'un second mode de réalisation d'un réacteur selon l'invention. Les éléments identiques présents dans plusieurs figures sont affectés d'une seule et même référence. En référence à la figure 1, le réacteur comporte essentiellement une 20 enceinte ENC raccordée à un moyen de pompage PV tel qu'une pompe à vide. Le porte-substrat PS se présente comme un anneau monté sur des pieds FT qui sont eux-mêmes fixés à la base de l'enceinte ENC. Il présente à sa base une bordure BD qui fait saillie vers le centre de l'anneau. Le substrat SUB rigide en forme de disque repose sur cette bordure BD qui définit une ouverture 25 OUV dans le porte-substrat PS. Ainsi, seule la périphérie du substrat SUB repose sur le porte-substrat PS, Face à cette ouverture OUV figure un moyen de chauffage par rayonnement IR tel qu'un ensemble de tubes infrarouges. Ce moyen de 30 chauffage est ici fixé à l'intérieur de l'enceinte ENV. Eventuellement, une plaque de protection PP, transparente au rayonnement, est interposée entre le porte-substrat PS et le moyen de chauffage IR. Cette plaque PP est fixée sur les pieds FT qui soutiennent le porte-substrat PS 35 En référence à la figure 2, un autre type de porte-substrat est présenté qui s'adapte aux substrats souples.Alternatively, if the substrate is flexible, the substrate holder takes the form of two trays between which the opening appears, the substrate bearing on these trays. The present invention will now appear in greater detail in the context of the following description of exemplary embodiments given by way of illustration with reference to the appended figures which represent: FIG. 1, a sectional diagram of a first embodiment of FIG. embodiment of a reactor according to the invention, - Figure 2, a perspective diagram of a substrate holder for flexible substrates, and - Figure 3, a sectional diagram of a second embodiment of the invention. a reactor according to the invention. The identical elements present in several figures are assigned a single reference. With reference to FIG. 1, the reactor essentially comprises an enclosure ENC connected to a pumping means PV such as a vacuum pump. The substrate carrier PS is a ring mounted on FT feet which are themselves attached to the base of the ENC enclosure. It has at its base a BD border that protrudes towards the center of the ring. The disk-shaped rigid SUB substrate rests on this border BD which defines an opening 25V in the substrate holder PS. Thus, only the periphery of the substrate SUB rests on the PS substrate holder, Faced with this opening OUV is an IR radiation heating means such as a set of infrared tubes. This heating means is here fixed inside the enclosure ENV. Optionally, a PP transparent radiation shielding plate is interposed between the PS substrate holder and the IR heating means. This PP plate is attached to the FT feet which support the PS 35 substrate holder. Referring to Fig. 2, another type of substrate holder is shown which adapts to the flexible substrates.

Ce porte-substrat prend la forme de deux poutres T1, T2 en T disposées parallèlement l'une à l'autre. Le substrat SS est ici bridé sur les plateaux des poutres T1, T2 au moyen de deux pinces PI, P2. L'espace qui figure entre les poutres représente l'ouverture OP apte à la propagation du rayonnement provenant du moyen de chauffage. Ici encore, seule une partie de la périphérie du substrat SS repose sur le porte-substrat. En référence à la figure 3, l'enceinte ENC est maintenant pourvue d'un hublot HUB à sa base, ce hublot étant face à l'ouverture du porte-substrat SH. Le moyen de chauffage est maintenant fixé à l'extérieur de l'enceinte ENC en regard du hublot HUB. Naturellement, le hublot HUB est transparent au rayonnement issu du moyen de chauffage. Les exemples de réalisation de l'invention présentés ci-dessus ont été choisis eu égard à leur caractère concret. Il ne serait cependant pas possible de répertorier de manière exhaustive tous les modes de réalisation que recouvre cette invention. En particulier, tout moyen décrit peut être remplacé par un moyen équivalent sans sortir du cadre de la présente invention.This substrate carrier takes the form of two beams T1, T2 T arranged parallel to one another. The substrate SS is here clamped on the plates of the beams T1, T2 by means of two clamps PI, P2. The space between the beams represents the aperture OP suitable for propagation of radiation from the heating means. Here again, only part of the periphery of the substrate SS rests on the substrate holder. With reference to FIG. 3, the ENC enclosure is now provided with a HUB porthole at its base, this porthole being facing the opening of the substrate holder SH. The heating means is now attached to the outside of the ENC enclosure facing the HUB porthole. Naturally, the port HUB is transparent to the radiation from the heating means. The embodiments of the invention presented above have been chosen in view of their concrete nature. It would not be possible, however, to exhaustively list all the embodiments covered by this invention. In particular, any means described may be replaced by equivalent means without departing from the scope of the present invention.

Claims (6)

REVENDICATIONS1) Réacteur comportant une enceinte (ENC) munie d'un moyen de pompage (PV), un porte-substrat (PS, SH), et un moyen de chauffage par rayonnement (IR), caractérisé en ce que ledit porte-substrat (PS, SH) présente une ouverture (OUV, OP) en regard dudit moyen de chauffage (IR) de sorte qu'il ne soit pas en contact avec la face arrière d'un substrat (SUB, SS) si ce n'est à la périphérie de ce substrat.CLAIMS1) Reactor comprising an enclosure (ENC) provided with a pumping means (PV), a substrate holder (PS, SH), and a radiation heating means (IR), characterized in that said substrate holder ( PS, SH) has an opening (OUV, OP) opposite said heating means (IR) so that it is not in contact with the rear face of a substrate (SUB, SS) except for the periphery of this substrate. 2) Réacteur selon la revendication 1, caractérisé en ce que ledit moyen de. chauffage (IR) est agencé dans l'enceinte (ENC) en regard de ladite ouverture (OUV).2) Reactor according to claim 1, characterized in that said means of. heating (IR) is arranged in the enclosure (ENC) opposite said opening (OUV). 3) Réacteur selon la revendication 2, caractérisé en ce qu'il comporte de plus une plaque de protection (PP) interposée entre ladite ouverture (OUV) et ledit moyen de chauffage (IR), cette plaque étant transparente au rayonnement de ce moyen de chauffage.3) reactor according to claim 2, characterized in that it further comprises a protection plate (PP) interposed between said opening (OUV) and said heating means (IR), this plate being transparent to the radiation of this means of heater. 4) Réacteur selon la revendication 1, caractérisé en ce que ledit moyen de chauffage (IR) est agencé à l'extérieur de ladite enceinte (ENC), derrière un hublot (HUB) qui figure en regard de ladite ouverture (OP).4) Reactor according to claim 1, characterized in that said heating means (IR) is arranged outside said enclosure (ENC) behind a porthole (HUB) which is opposite said opening (OP). 5) Réacteur selon l'une quelconque des revendications précédentes, caractérisé en ce que ledit porte-substrat (PS) prend la forme d'un cadre muni d'une bordure interne (BD) prévue pour retenir le substrat (SUB).5) Reactor according to any one of the preceding claims, characterized in that said substrate carrier (PS) takes the form of a frame provided with an inner edge (BD) provided for retaining the substrate (SUB). 6) Réacteur selon l'une quelconque des revendications précédentes, caractérisé en ce que ledit porte-substrat (SH) prend la forme de deux plateaux (T1, T2) entre lesquels figure ladite ouverture (OP), le substrat (SS) venant en appui sur ces plateaux.6) Reactor according to any one of the preceding claims, characterized in that said substrate carrier (SH) takes the form of two trays (T1, T2) between which said opening (OP), the substrate (SS) coming from support on these trays.
FR1200683A 2012-03-07 2012-03-07 REACTOR WITH AN OPEN SUBSTRATE HOLDER Expired - Fee Related FR2987844B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1200683A FR2987844B1 (en) 2012-03-07 2012-03-07 REACTOR WITH AN OPEN SUBSTRATE HOLDER
FR1400215A FR3000503A1 (en) 2012-03-07 2014-01-29 REACTOR WITH INTERNAL HEATING MEANS.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1200683A FR2987844B1 (en) 2012-03-07 2012-03-07 REACTOR WITH AN OPEN SUBSTRATE HOLDER

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FR2987844A1 true FR2987844A1 (en) 2013-09-13
FR2987844B1 FR2987844B1 (en) 2014-07-18

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FR1200683A Expired - Fee Related FR2987844B1 (en) 2012-03-07 2012-03-07 REACTOR WITH AN OPEN SUBSTRATE HOLDER
FR1400215A Withdrawn FR3000503A1 (en) 2012-03-07 2014-01-29 REACTOR WITH INTERNAL HEATING MEANS.

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FR1400215A Withdrawn FR3000503A1 (en) 2012-03-07 2014-01-29 REACTOR WITH INTERNAL HEATING MEANS.

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Citations (3)

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Publication number Priority date Publication date Assignee Title
US6344631B1 (en) * 2001-05-11 2002-02-05 Applied Materials, Inc. Substrate support assembly and processing apparatus
US6497767B1 (en) * 1999-05-14 2002-12-24 Tokyo Electron Limited Thermal processing unit for single substrate
WO2004049405A1 (en) * 2002-11-22 2004-06-10 Applied Materials, Inc. Backside heating chamber for emissivity independent thermal processes

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6888104B1 (en) * 2004-02-05 2005-05-03 Applied Materials, Inc. Thermally matched support ring for substrate processing chamber
EP2420588A1 (en) * 2010-08-16 2012-02-22 Applied Materials, Inc. Thermal management of film deposition processes
US8979087B2 (en) * 2011-07-29 2015-03-17 Applied Materials, Inc. Substrate supporting edge ring with coating for improved soak performance
CN103074606A (en) * 2012-02-22 2013-05-01 光达光电设备科技（嘉兴）有限公司 Graphite plate, reaction chamber with graphite plate, and substrate heating method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6497767B1 (en) * 1999-05-14 2002-12-24 Tokyo Electron Limited Thermal processing unit for single substrate
US6344631B1 (en) * 2001-05-11 2002-02-05 Applied Materials, Inc. Substrate support assembly and processing apparatus
WO2004049405A1 (en) * 2002-11-22 2004-06-10 Applied Materials, Inc. Backside heating chamber for emissivity independent thermal processes

Also Published As

Publication number Publication date
FR3000503A1 (en) 2014-07-04
FR2987844B1 (en) 2014-07-18

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