FR2987134B1 - Procede et dispositif de mesure de l'evolution dans le temps des performances electriques d'un transistor fdsoi - Google Patents

Procede et dispositif de mesure de l'evolution dans le temps des performances electriques d'un transistor fdsoi

Info

Publication number
FR2987134B1
FR2987134B1 FR1251415A FR1251415A FR2987134B1 FR 2987134 B1 FR2987134 B1 FR 2987134B1 FR 1251415 A FR1251415 A FR 1251415A FR 1251415 A FR1251415 A FR 1251415A FR 2987134 B1 FR2987134 B1 FR 2987134B1
Authority
FR
France
Prior art keywords
measuring time
time evolution
fdsoi transistor
electric performances
performances
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1251415A
Other languages
English (en)
Other versions
FR2987134A1 (fr
Inventor
Xavier Garros
Laurent Brunet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
STMicroelectronics Crolles 2 SAS
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, STMicroelectronics Crolles 2 SAS, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1251415A priority Critical patent/FR2987134B1/fr
Priority to US13/760,436 priority patent/US9689913B2/en
Publication of FR2987134A1 publication Critical patent/FR2987134A1/fr
Application granted granted Critical
Publication of FR2987134B1 publication Critical patent/FR2987134B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2642—Testing semiconductor operation lifetime or reliability, e.g. by accelerated life tests
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F17/00—Digital computing or data processing equipment or methods, specially adapted for specific functions
FR1251415A 2012-02-16 2012-02-16 Procede et dispositif de mesure de l'evolution dans le temps des performances electriques d'un transistor fdsoi Active FR2987134B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1251415A FR2987134B1 (fr) 2012-02-16 2012-02-16 Procede et dispositif de mesure de l'evolution dans le temps des performances electriques d'un transistor fdsoi
US13/760,436 US9689913B2 (en) 2012-02-16 2013-02-06 Method and device for measuring changes over time of the electrical performance of an FDSOI transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1251415A FR2987134B1 (fr) 2012-02-16 2012-02-16 Procede et dispositif de mesure de l'evolution dans le temps des performances electriques d'un transistor fdsoi

Publications (2)

Publication Number Publication Date
FR2987134A1 FR2987134A1 (fr) 2013-08-23
FR2987134B1 true FR2987134B1 (fr) 2014-11-28

Family

ID=45932385

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1251415A Active FR2987134B1 (fr) 2012-02-16 2012-02-16 Procede et dispositif de mesure de l'evolution dans le temps des performances electriques d'un transistor fdsoi

Country Status (2)

Country Link
US (1) US9689913B2 (fr)
FR (1) FR2987134B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2869325B1 (fr) * 2004-04-27 2006-06-16 Commissariat Energie Atomique Procede de depot d'une couche mince sur une couche oxydee d'un substrat
JP4448533B2 (ja) * 2007-11-21 2010-04-14 株式会社日立製作所 半導体素子パラメータ抽出方法
FR2949564B1 (fr) * 2009-08-28 2012-01-06 Commissariat Energie Atomique Procede et dispositif d'evaluation des performances electriques d'un transistor fdsoi
KR20150085035A (ko) * 2012-11-15 2015-07-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 디스플레이 장치

Also Published As

Publication number Publication date
US20130218492A1 (en) 2013-08-22
FR2987134A1 (fr) 2013-08-23
US9689913B2 (en) 2017-06-27

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