FR2985813A1 - Capteur d'especes chimiques et procede de detection d'une espece chimique - Google Patents
Capteur d'especes chimiques et procede de detection d'une espece chimique Download PDFInfo
- Publication number
- FR2985813A1 FR2985813A1 FR1203452A FR1203452A FR2985813A1 FR 2985813 A1 FR2985813 A1 FR 2985813A1 FR 1203452 A FR1203452 A FR 1203452A FR 1203452 A FR1203452 A FR 1203452A FR 2985813 A1 FR2985813 A1 FR 2985813A1
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- France
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- chemical species
- sensor
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- 239000013626 chemical specie Substances 0.000 title claims abstract description 83
- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000001514 detection method Methods 0.000 title claims abstract description 27
- 239000000463 material Substances 0.000 claims abstract description 51
- 239000007789 gas Substances 0.000 claims abstract description 39
- 239000004065 semiconductor Substances 0.000 claims abstract description 30
- 230000004044 response Effects 0.000 claims abstract description 12
- 239000012808 vapor phase Substances 0.000 claims abstract description 7
- 239000007791 liquid phase Substances 0.000 claims abstract description 4
- 150000002500 ions Chemical class 0.000 claims description 31
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 25
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- 238000003795 desorption Methods 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 9
- 150000004706 metal oxides Chemical class 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 8
- 230000035945 sensitivity Effects 0.000 claims description 7
- 239000007788 liquid Substances 0.000 claims description 5
- 239000012071 phase Substances 0.000 claims description 5
- 230000008859 change Effects 0.000 claims description 4
- 238000003909 pattern recognition Methods 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 4
- 239000000523 sample Substances 0.000 claims description 4
- 238000013528 artificial neural network Methods 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 230000006870 function Effects 0.000 description 11
- 238000005259 measurement Methods 0.000 description 11
- 238000001459 lithography Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000001179 sorption measurement Methods 0.000 description 7
- 238000002336 sorption--desorption measurement Methods 0.000 description 7
- 229910052681 coesite Inorganic materials 0.000 description 6
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 229910052682 stishovite Inorganic materials 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 238000012876 topography Methods 0.000 description 6
- 229910052905 tridymite Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- -1 ITO Chemical class 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 206010020751 Hypersensitivity Diseases 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003463 adsorbent Substances 0.000 description 1
- 230000007815 allergy Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000013473 artificial intelligence Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005202 decontamination Methods 0.000 description 1
- 230000003588 decontaminative effect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- 230000005865 ionizing radiation Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4148—Integrated circuits therefor, e.g. fabricated by CMOS processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/403—Cells and electrode assemblies
- G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
- G01N27/4141—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for gases
- G01N27/4143—Air gap between gate and channel, i.e. suspended gate [SG] FETs
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/62—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating the ionisation of gases, e.g. aerosols; by investigating electric discharges, e.g. emission of cathode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Electrochemistry (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Pathology (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Molecular Biology (AREA)
- Computer Hardware Design (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB1200626.8A GB2498522B (en) | 2012-01-16 | 2012-01-16 | A chemical species sensor and a method for detecting a chemical species |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2985813A1 true FR2985813A1 (fr) | 2013-07-19 |
Family
ID=45814030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1203452A Withdrawn FR2985813A1 (fr) | 2012-01-16 | 2012-12-18 | Capteur d'especes chimiques et procede de detection d'une espece chimique |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE102013001035A1 (de) |
FR (1) | FR2985813A1 (de) |
GB (1) | GB2498522B (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018069553A1 (fr) * | 2016-10-13 | 2018-04-19 | Peugeot Citroen Automobiles Sa | Capteur de detection a transistor a haute mobilite electronique selectif d'un composant gazeux ou liquide |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015104419A1 (de) | 2014-04-02 | 2015-10-08 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Fluidsensor und Verfahren zur Untersuchung eines Fluids |
EP4177602A1 (de) * | 2021-11-09 | 2023-05-10 | Siemens Aktiengesellschaft | Verfahren zum ermitteln einer zusammensetzung einer stoffprobe, detektor, steuereinheit und computerprogrammprodukt |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3644820A1 (de) * | 1986-12-31 | 1988-11-03 | Gyulai Maria Dobosne | Anordnung und verfahren zur erfassung von teilchen |
WO2005008234A1 (de) * | 2003-07-10 | 2005-01-27 | Infineon Technologies Ag | Sensor-transistor-element, sensor-einheit und sensor-array |
DE102006055990A1 (de) * | 2006-11-24 | 2008-05-29 | Forschungszentrum Jülich GmbH | Vorrichtung und Verfahren zur Messung biologischer und elektronischer Eigenschaften einer Probe |
DE102010001624A1 (de) * | 2010-02-05 | 2011-08-11 | Robert Bosch GmbH, 70469 | Verfahren zur Detektion von zwei oder mehr Gasspezies |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BG50700A1 (en) | 1990-07-11 | 1992-10-15 | Inst Fiz Na Tvardoto Tjalo Aka | Gas sensitive field transistor with conducting oxide gate |
JPH07218461A (ja) * | 1994-02-01 | 1995-08-18 | Riken Corp | ガスセンサーの駆動方法及びそれを用いたガスの検知方法 |
US20050237735A1 (en) | 2004-04-27 | 2005-10-27 | Eagle Fan | Illuminating mount |
TW200706863A (en) * | 2005-03-18 | 2007-02-16 | Nano Proprietary Inc | Gated gas sensor |
GB2469331A (en) * | 2009-04-09 | 2010-10-13 | Tech Universit T Graz | OFET-based sensor with organic gate dielectric for detecting an analyte |
-
2012
- 2012-01-16 GB GB1200626.8A patent/GB2498522B/en not_active Expired - Fee Related
- 2012-12-18 FR FR1203452A patent/FR2985813A1/fr not_active Withdrawn
-
2013
- 2013-01-15 DE DE102013001035.7A patent/DE102013001035A1/de not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3644820A1 (de) * | 1986-12-31 | 1988-11-03 | Gyulai Maria Dobosne | Anordnung und verfahren zur erfassung von teilchen |
WO2005008234A1 (de) * | 2003-07-10 | 2005-01-27 | Infineon Technologies Ag | Sensor-transistor-element, sensor-einheit und sensor-array |
DE102006055990A1 (de) * | 2006-11-24 | 2008-05-29 | Forschungszentrum Jülich GmbH | Vorrichtung und Verfahren zur Messung biologischer und elektronischer Eigenschaften einer Probe |
DE102010001624A1 (de) * | 2010-02-05 | 2011-08-11 | Robert Bosch GmbH, 70469 | Verfahren zur Detektion von zwei oder mehr Gasspezies |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018069553A1 (fr) * | 2016-10-13 | 2018-04-19 | Peugeot Citroen Automobiles Sa | Capteur de detection a transistor a haute mobilite electronique selectif d'un composant gazeux ou liquide |
FR3057666A1 (fr) * | 2016-10-13 | 2018-04-20 | Peugeot Citroen Automobiles Sa | Capteur de detection a transistor a haute mobilite electronique selectif d’un composant gazeux ou liquide |
US11408322B2 (en) | 2016-10-13 | 2022-08-09 | Psa Automobiles Sa | Detection sensor comprising a selective high-electron-mobility transistor for detecting a gaseous or liquid component |
Also Published As
Publication number | Publication date |
---|---|
GB2498522A (en) | 2013-07-24 |
DE102013001035A1 (de) | 2014-01-23 |
GB2498522B (en) | 2014-03-12 |
GB201200626D0 (en) | 2012-02-29 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20170505 |
|
ST | Notification of lapse |
Effective date: 20180831 |