FR2982720B1 - Interrupteur de puissance - Google Patents
Interrupteur de puissanceInfo
- Publication number
- FR2982720B1 FR2982720B1 FR1160349A FR1160349A FR2982720B1 FR 2982720 B1 FR2982720 B1 FR 2982720B1 FR 1160349 A FR1160349 A FR 1160349A FR 1160349 A FR1160349 A FR 1160349A FR 2982720 B1 FR2982720 B1 FR 2982720B1
- Authority
- FR
- France
- Prior art keywords
- gate
- coupled
- transistor
- power switch
- node
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
- H01L27/0262—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements including a PNP transistor and a NPN transistor, wherein each of said transistors has its base coupled to the collector of the other transistor, e.g. silicon controlled rectifier [SCR] devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1160349A FR2982720B1 (fr) | 2011-11-15 | 2011-11-15 | Interrupteur de puissance |
US13/666,727 US8598938B2 (en) | 2011-11-15 | 2012-11-01 | Power switch |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1160349A FR2982720B1 (fr) | 2011-11-15 | 2011-11-15 | Interrupteur de puissance |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2982720A1 FR2982720A1 (fr) | 2013-05-17 |
FR2982720B1 true FR2982720B1 (fr) | 2014-01-03 |
Family
ID=45809118
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1160349A Expired - Fee Related FR2982720B1 (fr) | 2011-11-15 | 2011-11-15 | Interrupteur de puissance |
Country Status (2)
Country | Link |
---|---|
US (1) | US8598938B2 (fr) |
FR (1) | FR2982720B1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9614367B2 (en) * | 2013-09-13 | 2017-04-04 | Stmicroelectronics Sa | Electronic device for ESD protection |
US9754931B2 (en) * | 2015-07-24 | 2017-09-05 | Semiconductor Components Industries, Llc | Circuit and an integrated circuit including a transistor and another component coupled thereto |
FR3063574B1 (fr) | 2017-03-03 | 2019-05-03 | Stmicroelectronics Sa | Dispositif compact de protection d'un circuit integre contre les decharges electrostatiques |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5811857A (en) * | 1996-10-22 | 1998-09-22 | International Business Machines Corporation | Silicon-on-insulator body-coupled gated diode for electrostatic discharge (ESD) and analog applications |
US6191615B1 (en) * | 1998-03-30 | 2001-02-20 | Nec Corporation | Logic circuit having reduced power consumption |
US6747501B2 (en) * | 2001-07-13 | 2004-06-08 | Industrial Technology Research Institute | Dual-triggered electrostatic discharge protection circuit |
JP2004328760A (ja) * | 2003-04-29 | 2004-11-18 | Stmicroelectronics Sa | トライアック制御回路 |
US9019666B2 (en) * | 2010-01-22 | 2015-04-28 | Stmicroelectronics S.A. | Electronic device, in particular for protection against electrostatic discharges, and method for protecting a component against electrostatic discharges |
-
2011
- 2011-11-15 FR FR1160349A patent/FR2982720B1/fr not_active Expired - Fee Related
-
2012
- 2012-11-01 US US13/666,727 patent/US8598938B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8598938B2 (en) | 2013-12-03 |
FR2982720A1 (fr) | 2013-05-17 |
US20130120049A1 (en) | 2013-05-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20150731 |