FR2982700B1 - Amplificateur de lecture avec transistors de precharge et de decodage a grille double - Google Patents

Amplificateur de lecture avec transistors de precharge et de decodage a grille double

Info

Publication number
FR2982700B1
FR2982700B1 FR1160396A FR1160396A FR2982700B1 FR 2982700 B1 FR2982700 B1 FR 2982700B1 FR 1160396 A FR1160396 A FR 1160396A FR 1160396 A FR1160396 A FR 1160396A FR 2982700 B1 FR2982700 B1 FR 2982700B1
Authority
FR
France
Prior art keywords
precharge
reading amplifier
dual grid
decoding transistors
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1160396A
Other languages
English (en)
Other versions
FR2982700A1 (fr
Inventor
Richard Ferrant
Joerg Vollrath
Roland Thewes
Wolfgang Hoenlein
Hofmann Franz
Gerhard Enders
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR1160396A priority Critical patent/FR2982700B1/fr
Priority to TW101140579A priority patent/TWI569283B/zh
Priority to KR1020147012866A priority patent/KR101641609B1/ko
Priority to DE112012004758.3T priority patent/DE112012004758T5/de
Priority to CN201280055733.4A priority patent/CN103930949B/zh
Priority to US14/358,193 priority patent/US9251871B2/en
Priority to PCT/EP2012/072549 priority patent/WO2013072331A1/fr
Priority to SG11201402345TA priority patent/SG11201402345TA/en
Publication of FR2982700A1 publication Critical patent/FR2982700A1/fr
Application granted granted Critical
Publication of FR2982700B1 publication Critical patent/FR2982700B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier
FR1160396A 2011-11-15 2011-11-15 Amplificateur de lecture avec transistors de precharge et de decodage a grille double Active FR2982700B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR1160396A FR2982700B1 (fr) 2011-11-15 2011-11-15 Amplificateur de lecture avec transistors de precharge et de decodage a grille double
TW101140579A TWI569283B (zh) 2011-11-15 2012-11-01 具有雙閘極預充電及解碼電晶體之感測放大器
DE112012004758.3T DE112012004758T5 (de) 2011-11-15 2012-11-14 Leseverstärker mir Doppel-Gate-Vorlade -und Decodiertransistoren
CN201280055733.4A CN103930949B (zh) 2011-11-15 2012-11-14 具有双栅预充电和解码晶体管的读出放大器
KR1020147012866A KR101641609B1 (ko) 2011-11-15 2012-11-14 이중 게이트 프리차지 및 디코드 트랜지스터들을 갖는 감지 증폭기
US14/358,193 US9251871B2 (en) 2011-11-15 2012-11-14 Sense amplifier with dual gate precharge and decode transistors
PCT/EP2012/072549 WO2013072331A1 (fr) 2011-11-15 2012-11-14 Amplificateur de détection avec transistors de préchargement et de décodage à double grille
SG11201402345TA SG11201402345TA (en) 2011-11-15 2012-11-14 Sense amplifier with dual gate precharge and decode transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1160396A FR2982700B1 (fr) 2011-11-15 2011-11-15 Amplificateur de lecture avec transistors de precharge et de decodage a grille double

Publications (2)

Publication Number Publication Date
FR2982700A1 FR2982700A1 (fr) 2013-05-17
FR2982700B1 true FR2982700B1 (fr) 2014-02-07

Family

ID=47148834

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1160396A Active FR2982700B1 (fr) 2011-11-15 2011-11-15 Amplificateur de lecture avec transistors de precharge et de decodage a grille double

Country Status (8)

Country Link
US (1) US9251871B2 (fr)
KR (1) KR101641609B1 (fr)
CN (1) CN103930949B (fr)
DE (1) DE112012004758T5 (fr)
FR (1) FR2982700B1 (fr)
SG (1) SG11201402345TA (fr)
TW (1) TWI569283B (fr)
WO (1) WO2013072331A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2985839B1 (fr) * 2012-01-16 2014-02-07 Soitec Silicon On Insulator Circuit et procede pour detecter une difference de tension sur une paire de lignes de signal duales, en particulier par un transistor d'egalisation
CN105761747B (zh) * 2016-02-16 2019-01-04 上海华虹宏力半导体制造有限公司 静态随机存储器位线预充电路
KR102514654B1 (ko) * 2021-11-18 2023-03-29 서울대학교산학협력단 오버패스형 채널을 포함하는 반도체 소자

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1153573A (fr) 1955-06-09 1958-03-12 Tokheim Corp Perfectionnements aux dispositifs d'alimentation en combustible liquide
FR1152256A (fr) 1956-06-07 1958-02-13 Petit Perfectionnements aux serrures à mortaiser
DE58908918D1 (de) * 1989-03-16 1995-03-02 Siemens Ag Integrierter Halbleiterspeicher vom Typ DRAM und Verfahren zu seinem Testen.
IT1249809B (it) * 1991-05-10 1995-03-28 St Microelectronics Srl Circuito di lettura a offset di corrente modulata o a sbilanciamento di corrente per celle di memorie programmabili
JP2000243082A (ja) * 1999-02-17 2000-09-08 Mitsubishi Electric Corp 半導体記憶装置
JP2004310904A (ja) * 2003-04-07 2004-11-04 Renesas Technology Corp 不揮発性半導体記憶装置
US7372092B2 (en) * 2005-05-05 2008-05-13 Micron Technology, Inc. Memory cell, device, and system
US7304903B2 (en) * 2006-01-23 2007-12-04 Purdue Research Foundation Sense amplifier circuit
FR2911004B1 (fr) * 2006-12-28 2009-05-15 Commissariat Energie Atomique Procede de realisation de transistors a double-grille asymetriques permettant la realisation de transistors a double-grille asymetriques et symetriques sur un meme substrat
WO2009046114A2 (fr) * 2007-10-01 2009-04-09 University Of Florida Research Foundation, Inc. Cellule de même dynamique de corps flottant à deux transistors
EP2532005A4 (fr) * 2010-02-07 2016-06-22 Zeno Semiconductor Inc Dispositif de mémoire à semi-conducteurs comportant un transistor à corps électriquement flottant, dispositif de mémoire à semi-conducteurs ayant une fonction volatile et non volatile, et procédé de fonctionnement associé
FR2972838B1 (fr) 2011-03-18 2013-04-12 Soitec Silicon On Insulator Memoire a semi-conducteurs comportant des amplificateurs de lecture decales associes a un decodeur de colonne local
FR2974656B1 (fr) 2011-04-26 2013-05-17 Soitec Silicon On Insulator Amplificateur de detection differentiel sans transistor a grille de passage dedie

Also Published As

Publication number Publication date
FR2982700A1 (fr) 2013-05-17
WO2013072331A1 (fr) 2013-05-23
KR20140079468A (ko) 2014-06-26
DE112012004758T5 (de) 2014-12-24
TW201324525A (zh) 2013-06-16
CN103930949B (zh) 2016-09-21
US9251871B2 (en) 2016-02-02
US20140321225A1 (en) 2014-10-30
KR101641609B1 (ko) 2016-07-21
SG11201402345TA (en) 2014-09-26
TWI569283B (zh) 2017-02-01
CN103930949A (zh) 2014-07-16

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