FR2978293B1 - Procede de fabrication d'un transistor a injection de porteurs chauds - Google Patents
Procede de fabrication d'un transistor a injection de porteurs chaudsInfo
- Publication number
- FR2978293B1 FR2978293B1 FR1156605A FR1156605A FR2978293B1 FR 2978293 B1 FR2978293 B1 FR 2978293B1 FR 1156605 A FR1156605 A FR 1156605A FR 1156605 A FR1156605 A FR 1156605A FR 2978293 B1 FR2978293 B1 FR 2978293B1
- Authority
- FR
- France
- Prior art keywords
- hot
- manufacturing
- carrier injection
- injection transistor
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000002347 injection Methods 0.000 title 1
- 239000007924 injection Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1156605A FR2978293B1 (fr) | 2011-07-21 | 2011-07-21 | Procede de fabrication d'un transistor a injection de porteurs chauds |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1156605A FR2978293B1 (fr) | 2011-07-21 | 2011-07-21 | Procede de fabrication d'un transistor a injection de porteurs chauds |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2978293A1 FR2978293A1 (fr) | 2013-01-25 |
FR2978293B1 true FR2978293B1 (fr) | 2014-04-11 |
Family
ID=44741557
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1156605A Expired - Fee Related FR2978293B1 (fr) | 2011-07-21 | 2011-07-21 | Procede de fabrication d'un transistor a injection de porteurs chauds |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR2978293B1 (fr) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2513207C2 (de) * | 1974-09-20 | 1982-07-01 | Siemens AG, 1000 Berlin und 8000 München | n-Kanal-Speicher-FET |
US4016588A (en) * | 1974-12-27 | 1977-04-05 | Nippon Electric Company, Ltd. | Non-volatile semiconductor memory device |
JPH02308571A (ja) * | 1989-05-24 | 1990-12-21 | Toshiba Corp | 半導体記憶装置 |
TW203148B (fr) * | 1991-03-27 | 1993-04-01 | American Telephone & Telegraph | |
JPH11163305A (ja) * | 1997-11-04 | 1999-06-18 | Oko Denshi Kofun Yugenkoshi | 不揮発性半導体メモリデバイス |
JP2001093996A (ja) * | 1999-09-27 | 2001-04-06 | Toshiba Corp | 半導体装置の製造方法 |
-
2011
- 2011-07-21 FR FR1156605A patent/FR2978293B1/fr not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
FR2978293A1 (fr) | 2013-01-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20150331 |