FR2947383B1 - Capteur d'images a transfert de charges multidirectionnel a deux phases. - Google Patents
Capteur d'images a transfert de charges multidirectionnel a deux phases.Info
- Publication number
- FR2947383B1 FR2947383B1 FR0954296A FR0954296A FR2947383B1 FR 2947383 B1 FR2947383 B1 FR 2947383B1 FR 0954296 A FR0954296 A FR 0954296A FR 0954296 A FR0954296 A FR 0954296A FR 2947383 B1 FR2947383 B1 FR 2947383B1
- Authority
- FR
- France
- Prior art keywords
- phases
- image sensor
- load transfer
- transfer image
- multidirectional load
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76833—Buried channel CCD
- H01L29/76841—Two-Phase CCD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0954296A FR2947383B1 (fr) | 2009-06-24 | 2009-06-24 | Capteur d'images a transfert de charges multidirectionnel a deux phases. |
| US12/821,785 US8643063B2 (en) | 2009-06-24 | 2010-06-23 | Multidirectional two-phase charge-coupled device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR0954296A FR2947383B1 (fr) | 2009-06-24 | 2009-06-24 | Capteur d'images a transfert de charges multidirectionnel a deux phases. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2947383A1 FR2947383A1 (fr) | 2010-12-31 |
| FR2947383B1 true FR2947383B1 (fr) | 2011-12-02 |
Family
ID=41506458
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR0954296A Expired - Fee Related FR2947383B1 (fr) | 2009-06-24 | 2009-06-24 | Capteur d'images a transfert de charges multidirectionnel a deux phases. |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8643063B2 (fr) |
| FR (1) | FR2947383B1 (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9279774B2 (en) * | 2011-07-12 | 2016-03-08 | Kla-Tencor Corp. | Wafer inspection |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5613769A (en) | 1979-07-13 | 1981-02-10 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Charge-coupled device |
| US4926225A (en) * | 1988-06-29 | 1990-05-15 | Texas Instruments Incorporated | High performance extended wavelength imager and method of use |
| JP2517375B2 (ja) * | 1988-12-19 | 1996-07-24 | 三菱電機株式会社 | 固体撮像装置および該装置に用いられる電荷転送装置ならびにその製造方法 |
| JPH0355854A (ja) * | 1989-07-25 | 1991-03-11 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| US5055900A (en) * | 1989-10-11 | 1991-10-08 | The Trustees Of Columbia University In The City Of New York | Trench-defined charge-coupled device |
| JPH0445548A (ja) | 1990-06-13 | 1992-02-14 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| FR2947382B1 (fr) * | 2009-06-24 | 2011-09-09 | St Microelectronics Crolles 2 | Capteur d'images a transfert de charges a deux phases. |
| FR2947381B1 (fr) * | 2009-06-24 | 2011-09-09 | St Microelectronics Crolles 2 | Capteur photosensible a transfert de charges comportant des electrodes verticales. |
-
2009
- 2009-06-24 FR FR0954296A patent/FR2947383B1/fr not_active Expired - Fee Related
-
2010
- 2010-06-23 US US12/821,785 patent/US8643063B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US8643063B2 (en) | 2014-02-04 |
| FR2947383A1 (fr) | 2010-12-31 |
| US20100327325A1 (en) | 2010-12-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |
Effective date: 20140228 |