FR2939794B1 - Composes actifs redox organiques a stockage de charges reversible et substrats et dispositifs de memoire moleculaire les comprenant - Google Patents
Composes actifs redox organiques a stockage de charges reversible et substrats et dispositifs de memoire moleculaire les comprenantInfo
- Publication number
- FR2939794B1 FR2939794B1 FR0858485A FR0858485A FR2939794B1 FR 2939794 B1 FR2939794 B1 FR 2939794B1 FR 0858485 A FR0858485 A FR 0858485A FR 0858485 A FR0858485 A FR 0858485A FR 2939794 B1 FR2939794 B1 FR 2939794B1
- Authority
- FR
- France
- Prior art keywords
- redox active
- molecular memory
- charge storage
- organic redox
- substrates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 150000001875 compounds Chemical class 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 title abstract 4
- 230000002441 reversible effect Effects 0.000 title abstract 2
- 239000012634 fragment Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910021645 metal ion Inorganic materials 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/701—Organic molecular electronic devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
Abstract
Composé actif rédox organique à stockage de charges réversible, de formule (I) : dans laquelle : - R représente un groupe déconjuguant ; - M représente un fragment actif rédox organique, ne comprenant pas d'ion métallique ou de métal, apte au stockage réversible d'au moins une charge; - T représente un groupement tripode comprenant trois groupes F, aptes à se greffer chimiquement à une surface d'un substrat solide ; - Y représente un groupe espaceur séparant M de T. Substrat sur lequel sont greffés lesdits composés. Dispositif de mémoire moléculaire comprenant un tel composé ou un tel substrat. Appareil électronique comprenant un tel dispositif de mémoire moléculaire.
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0858485A FR2939794B1 (fr) | 2008-12-11 | 2008-12-11 | Composes actifs redox organiques a stockage de charges reversible et substrats et dispositifs de memoire moleculaire les comprenant |
JP2011540087A JP2012511542A (ja) | 2008-12-11 | 2009-12-09 | 可逆的電荷蓄積性有機レドックス活性化合物及びそれらにより構成される基板及び分子記憶デバイス |
US13/139,276 US20120205605A1 (en) | 2008-12-11 | 2009-12-09 | Organic redox active compounds with reversible storage of charges and substrates and molecular memory devices comprising them |
EP09775163A EP2359370A1 (fr) | 2008-12-11 | 2009-12-09 | Composés actifs rédox organiques à stockage de charges réversible et substrats et dispositifs de mémoire moléculaire les comprenant. |
PCT/EP2009/066770 WO2010066812A1 (fr) | 2008-12-11 | 2009-12-09 | Composés actifs rédox organiques à stockage de charges réversible et substrats et dispositifs de mémoire moléculaire les comprenant. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0858485A FR2939794B1 (fr) | 2008-12-11 | 2008-12-11 | Composes actifs redox organiques a stockage de charges reversible et substrats et dispositifs de memoire moleculaire les comprenant |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2939794A1 FR2939794A1 (fr) | 2010-06-18 |
FR2939794B1 true FR2939794B1 (fr) | 2011-03-25 |
Family
ID=40848460
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0858485A Expired - Fee Related FR2939794B1 (fr) | 2008-12-11 | 2008-12-11 | Composes actifs redox organiques a stockage de charges reversible et substrats et dispositifs de memoire moleculaire les comprenant |
Country Status (5)
Country | Link |
---|---|
US (1) | US20120205605A1 (fr) |
EP (1) | EP2359370A1 (fr) |
JP (1) | JP2012511542A (fr) |
FR (1) | FR2939794B1 (fr) |
WO (1) | WO2010066812A1 (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2980989A1 (fr) * | 2011-10-06 | 2013-04-12 | Commissariat Energie Atomique | Procede de fonctionnalisation d'un substrat solide autre qu'un substrat en or par des composes chimiques specifiques |
JP6561123B2 (ja) * | 2015-08-04 | 2019-08-14 | 富士フイルム株式会社 | 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、有機薄膜トランジスタ用材料、有機薄膜トランジスタ用組成物、有機半導体膜、化合物 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7312100B2 (en) * | 2003-05-27 | 2007-12-25 | The North Carolina State University | In situ patterning of electrolyte for molecular information storage devices |
DE10324388A1 (de) * | 2003-05-28 | 2004-12-30 | Infineon Technologies Ag | Schaltungselement mit einer ersten Schicht aus einem elektrisch isolierenden Substratmaterial und Verfahren zur Herstellung eines Schaltungselements |
-
2008
- 2008-12-11 FR FR0858485A patent/FR2939794B1/fr not_active Expired - Fee Related
-
2009
- 2009-12-09 JP JP2011540087A patent/JP2012511542A/ja active Pending
- 2009-12-09 WO PCT/EP2009/066770 patent/WO2010066812A1/fr active Application Filing
- 2009-12-09 US US13/139,276 patent/US20120205605A1/en not_active Abandoned
- 2009-12-09 EP EP09775163A patent/EP2359370A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
FR2939794A1 (fr) | 2010-06-18 |
EP2359370A1 (fr) | 2011-08-24 |
JP2012511542A (ja) | 2012-05-24 |
WO2010066812A1 (fr) | 2010-06-17 |
US20120205605A1 (en) | 2012-08-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20140829 |