FR2935533B1 - Condensateur tridimensionnel et procede de conception topologique d'un tel condensateur. - Google Patents
Condensateur tridimensionnel et procede de conception topologique d'un tel condensateur.Info
- Publication number
- FR2935533B1 FR2935533B1 FR0855745A FR0855745A FR2935533B1 FR 2935533 B1 FR2935533 B1 FR 2935533B1 FR 0855745 A FR0855745 A FR 0855745A FR 0855745 A FR0855745 A FR 0855745A FR 2935533 B1 FR2935533 B1 FR 2935533B1
- Authority
- FR
- France
- Prior art keywords
- capacitor
- topologic
- design
- dimensional
- stack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 title abstract 3
- 238000001465 metallisation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
- H01L23/5223—Capacitor integral with wiring layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Ce condensateur tridimensionnel comprend un empilement d'électrodes superposées formées dans des niveaux de métallisation respectives d'un circuit intégré. Il comporte en outre au moins deux électrodes additionnelles superposées formées au dessus dudit empilement, les électrodes additionnelles comprenant chacune un ensemble d'au moins un barreau (B, B') s'étendant selon une première direction. Une partie desdits barreaux comporte des ramifications (R) s'étendant selon une deuxième direction.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0855745A FR2935533B1 (fr) | 2008-08-27 | 2008-08-27 | Condensateur tridimensionnel et procede de conception topologique d'un tel condensateur. |
US13/060,152 US20110149468A1 (en) | 2008-08-27 | 2009-08-24 | Three-dimensional capacitor and topological design method for such a capacitor |
PCT/FR2009/051620 WO2010023401A1 (fr) | 2008-08-27 | 2009-08-24 | Condensateur tridimensionnel et procede de conception topologique d'un tel condensateur. |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0855745A FR2935533B1 (fr) | 2008-08-27 | 2008-08-27 | Condensateur tridimensionnel et procede de conception topologique d'un tel condensateur. |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2935533A1 FR2935533A1 (fr) | 2010-03-05 |
FR2935533B1 true FR2935533B1 (fr) | 2011-07-22 |
Family
ID=40459728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0855745A Expired - Fee Related FR2935533B1 (fr) | 2008-08-27 | 2008-08-27 | Condensateur tridimensionnel et procede de conception topologique d'un tel condensateur. |
Country Status (3)
Country | Link |
---|---|
US (1) | US20110149468A1 (fr) |
FR (1) | FR2935533B1 (fr) |
WO (1) | WO2010023401A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5947580B2 (ja) * | 2012-03-23 | 2016-07-06 | ローム株式会社 | デカップルキャパシタセル、セルベースic、セルベースicのレイアウトシステムおよびレイアウト方法 |
CN103367308A (zh) * | 2012-03-31 | 2013-10-23 | 中芯国际集成电路制造(上海)有限公司 | 金属-氧化物-金属电容器 |
US9209240B2 (en) * | 2012-10-16 | 2015-12-08 | Sandisk Technologies Inc. | Metal-oxide-metal capacitor structure |
US9331013B2 (en) | 2013-03-14 | 2016-05-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated capacitor |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5583359A (en) * | 1995-03-03 | 1996-12-10 | Northern Telecom Limited | Capacitor structure for an integrated circuit |
CA2395900A1 (fr) * | 2002-08-12 | 2004-02-12 | Christopher Andrew Devries | Condensateurs verticaux adaptes |
US6819542B2 (en) * | 2003-03-04 | 2004-11-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interdigitated capacitor structure for an integrated circuit |
FR2870042B1 (fr) * | 2004-05-07 | 2006-09-29 | St Microelectronics Sa | Structure capacitive de circuit integre |
JP4343085B2 (ja) * | 2004-10-26 | 2009-10-14 | Necエレクトロニクス株式会社 | 半導体装置 |
US7202548B2 (en) * | 2005-09-13 | 2007-04-10 | Via Technologies, Inc. | Embedded capacitor with interdigitated structure |
TWI296852B (en) * | 2005-12-07 | 2008-05-11 | Winbond Electronics Corp | Interdigitized capacitor |
US7838919B2 (en) * | 2007-03-29 | 2010-11-23 | Panasonic Corporation | Capacitor structure |
TW200901247A (en) * | 2007-06-27 | 2009-01-01 | Ind Tech Res Inst | Interdigital capacitor |
US7990676B2 (en) * | 2007-10-10 | 2011-08-02 | Advanced Micro Devices, Inc. | Density-conforming vertical plate capacitors exhibiting enhanced capacitance and methods of fabricating the same |
-
2008
- 2008-08-27 FR FR0855745A patent/FR2935533B1/fr not_active Expired - Fee Related
-
2009
- 2009-08-24 WO PCT/FR2009/051620 patent/WO2010023401A1/fr active Application Filing
- 2009-08-24 US US13/060,152 patent/US20110149468A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20110149468A1 (en) | 2011-06-23 |
FR2935533A1 (fr) | 2010-03-05 |
WO2010023401A1 (fr) | 2010-03-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20150430 |