FR2914481B1 - Dispositif de memoire avec prise en compte des courants de fuite pour l'activation des amplificateurs de lecture - Google Patents

Dispositif de memoire avec prise en compte des courants de fuite pour l'activation des amplificateurs de lecture

Info

Publication number
FR2914481B1
FR2914481B1 FR0702413A FR0702413A FR2914481B1 FR 2914481 B1 FR2914481 B1 FR 2914481B1 FR 0702413 A FR0702413 A FR 0702413A FR 0702413 A FR0702413 A FR 0702413A FR 2914481 B1 FR2914481 B1 FR 2914481B1
Authority
FR
France
Prior art keywords
activation
account
memory device
leakage currents
reading amplifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0702413A
Other languages
English (en)
Other versions
FR2914481A1 (fr
Inventor
Franck Genevaux
Alban Forichon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0702413A priority Critical patent/FR2914481B1/fr
Priority to US12/061,238 priority patent/US7995413B2/en
Publication of FR2914481A1 publication Critical patent/FR2914481A1/fr
Application granted granted Critical
Publication of FR2914481B1 publication Critical patent/FR2914481B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/14—Dummy cell management; Sense reference voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
FR0702413A 2007-04-02 2007-04-02 Dispositif de memoire avec prise en compte des courants de fuite pour l'activation des amplificateurs de lecture Expired - Fee Related FR2914481B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0702413A FR2914481B1 (fr) 2007-04-02 2007-04-02 Dispositif de memoire avec prise en compte des courants de fuite pour l'activation des amplificateurs de lecture
US12/061,238 US7995413B2 (en) 2007-04-02 2008-04-02 Memory device that takes leakage currents into account in activating the read amplifiers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0702413A FR2914481B1 (fr) 2007-04-02 2007-04-02 Dispositif de memoire avec prise en compte des courants de fuite pour l'activation des amplificateurs de lecture

Publications (2)

Publication Number Publication Date
FR2914481A1 FR2914481A1 (fr) 2008-10-03
FR2914481B1 true FR2914481B1 (fr) 2009-06-05

Family

ID=38658515

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0702413A Expired - Fee Related FR2914481B1 (fr) 2007-04-02 2007-04-02 Dispositif de memoire avec prise en compte des courants de fuite pour l'activation des amplificateurs de lecture

Country Status (2)

Country Link
US (1) US7995413B2 (fr)
FR (1) FR2914481B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2805329A1 (fr) * 2012-01-17 2014-11-26 Marvell World Trade Ltd. Système et procédé pour la modification d'activation d'un amplificateur de détection
US9324412B2 (en) * 2012-10-31 2016-04-26 Taiwan Semiconductor Manufacturing Company, Ltd. Memory architecture
US9276083B2 (en) * 2012-12-14 2016-03-01 Altera Corporation Memory elements with stacked pull-up devices
GB2520740A (en) * 2013-11-29 2015-06-03 St Microelectronics Res & Dev Low power die
US10181358B2 (en) * 2016-10-26 2019-01-15 Mediatek Inc. Sense amplifier
US10333510B2 (en) * 2017-07-07 2019-06-25 Infineon Tehcnologies Ag System and method for biasing an RF switch
CN113892137A (zh) 2021-03-30 2022-01-04 长江存储科技有限责任公司 存储器器件及其操作方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0805454A1 (fr) * 1996-04-30 1997-11-05 STMicroelectronics S.r.l. Circuit de détection pour lecture et vérification du contenu d'une cellule de mémoire
TW523977B (en) * 2001-09-26 2003-03-11 Macronix Int Co Ltd Circuit and method for stability and speed enhancement for a sense amplifier
ITTO20030132A1 (it) * 2003-02-25 2004-08-26 Atmel Corp Amplificatore di rilevamento rapido a specchio, di tipo configurabile e procedimento per configurare un tale amplificatore.
FR2857149B1 (fr) * 2003-07-01 2005-12-16 St Microelectronics Sa Procede de commande des amplificateurs de lecture d'une memoire et circuit integre de memoire correspondant
FR2857091A1 (fr) * 2003-07-01 2005-01-07 St Microelectronics Sa Procede de detection de la temperature d'un circuit integre, et circuit integre correspondant
US7020036B2 (en) * 2004-08-26 2006-03-28 Ememory Technology Inc. Memory unit with sensing current stabilization
JP4477456B2 (ja) * 2004-09-06 2010-06-09 富士通マイクロエレクトロニクス株式会社 半導体メモリ
JP4517786B2 (ja) * 2004-09-06 2010-08-04 富士通セミコンダクター株式会社 半導体記憶装置及びセンスアンプの活性化信号の生成方法
US7417469B2 (en) * 2006-11-13 2008-08-26 International Business Machines Corporation Compensation for leakage current from dynamic storage node variation by the utilization of an automatic self-adaptive keeper
US7746716B2 (en) * 2007-02-22 2010-06-29 Freescale Semiconductor, Inc. Memory having a dummy bitline for timing control

Also Published As

Publication number Publication date
US20080247251A1 (en) 2008-10-09
FR2914481A1 (fr) 2008-10-03
US7995413B2 (en) 2011-08-09

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20131231