FR2910713B1 - Photodiode verrouillee a grande capacite de stockage, par exemple pour un capteur d'image, procede de realisation associe, et capteur d'image comprenant une telle diode. - Google Patents

Photodiode verrouillee a grande capacite de stockage, par exemple pour un capteur d'image, procede de realisation associe, et capteur d'image comprenant une telle diode.

Info

Publication number
FR2910713B1
FR2910713B1 FR0611350A FR0611350A FR2910713B1 FR 2910713 B1 FR2910713 B1 FR 2910713B1 FR 0611350 A FR0611350 A FR 0611350A FR 0611350 A FR0611350 A FR 0611350A FR 2910713 B1 FR2910713 B1 FR 2910713B1
Authority
FR
France
Prior art keywords
image sensor
photodiode
diode
locked
storage capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0611350A
Other languages
English (en)
Other versions
FR2910713A1 (fr
Inventor
Francois Roy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0611350A priority Critical patent/FR2910713B1/fr
Priority to US11/963,939 priority patent/US7701030B2/en
Publication of FR2910713A1 publication Critical patent/FR2910713A1/fr
Application granted granted Critical
Publication of FR2910713B1 publication Critical patent/FR2910713B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
FR0611350A 2006-12-26 2006-12-26 Photodiode verrouillee a grande capacite de stockage, par exemple pour un capteur d'image, procede de realisation associe, et capteur d'image comprenant une telle diode. Expired - Fee Related FR2910713B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0611350A FR2910713B1 (fr) 2006-12-26 2006-12-26 Photodiode verrouillee a grande capacite de stockage, par exemple pour un capteur d'image, procede de realisation associe, et capteur d'image comprenant une telle diode.
US11/963,939 US7701030B2 (en) 2006-12-26 2007-12-24 Pinned photodiode with high storage capacity, method of manufacture and image sensor incorporating same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0611350A FR2910713B1 (fr) 2006-12-26 2006-12-26 Photodiode verrouillee a grande capacite de stockage, par exemple pour un capteur d'image, procede de realisation associe, et capteur d'image comprenant une telle diode.

Publications (2)

Publication Number Publication Date
FR2910713A1 FR2910713A1 (fr) 2008-06-27
FR2910713B1 true FR2910713B1 (fr) 2009-06-12

Family

ID=38291001

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0611350A Expired - Fee Related FR2910713B1 (fr) 2006-12-26 2006-12-26 Photodiode verrouillee a grande capacite de stockage, par exemple pour un capteur d'image, procede de realisation associe, et capteur d'image comprenant une telle diode.

Country Status (2)

Country Link
US (1) US7701030B2 (fr)
FR (1) FR2910713B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101024815B1 (ko) * 2008-09-30 2011-03-24 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP5493430B2 (ja) 2009-03-31 2014-05-14 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
FR2955700B1 (fr) * 2010-01-28 2012-08-17 St Microelectronics Crolles 2 Photodiode de capteur d'image
EP2713409B1 (fr) 2012-09-27 2020-08-26 ams AG Photodiode avec zone de charge d'espace qui peut être réduite par une électrode de champ
FR3022397B1 (fr) 2014-06-13 2018-03-23 New Imaging Technologies Cellule photoelectrique de type c-mos a transfert de charge, et capteur matriciel comprenant un ensemble de telles cellules
CN106952931B (zh) * 2016-01-07 2019-11-01 中芯国际集成电路制造(上海)有限公司 一种cmos图像传感器的制造方法
CN109817736A (zh) * 2019-01-23 2019-05-28 杭州电子科技大学 一种串扰抑制和辐射加固的像素探测器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970011376B1 (ko) * 1993-12-13 1997-07-10 금성일렉트론 주식회사 씨씨디(ccd)형 고체촬상소자
EP0883187A1 (fr) * 1997-06-04 1998-12-09 Interuniversitair Micro-Elektronica Centrum Vzw Détecteur de radiation, structure d'un pixel à sensibilité élevée utilisant ce détecteur et méthode de fabrication de ce détecteur
US6026964A (en) * 1997-08-25 2000-02-22 International Business Machines Corporation Active pixel sensor cell and method of using
JP3403061B2 (ja) * 1998-03-31 2003-05-06 株式会社東芝 固体撮像装置
US6489643B1 (en) * 1998-06-27 2002-12-03 Hynix Semiconductor Inc. Photodiode having a plurality of PN junctions and image sensor having the same
JP3576033B2 (ja) * 1999-03-31 2004-10-13 株式会社東芝 固体撮像装置
JP2005072236A (ja) * 2003-08-25 2005-03-17 Renesas Technology Corp 半導体装置および半導体装置の製造方法
JP2005093866A (ja) * 2003-09-19 2005-04-07 Fuji Film Microdevices Co Ltd 固体撮像素子の製造方法
US7238977B2 (en) * 2004-08-19 2007-07-03 Micron Technology, Inc. Wide dynamic range sensor having a pinned diode with multiple pinned voltages
US7154137B2 (en) * 2004-10-12 2006-12-26 Omnivision Technologies, Inc. Image sensor and pixel having a non-convex photodiode
US7355228B2 (en) * 2004-10-15 2008-04-08 Omnivision Technologies, Inc. Image sensor pixel having photodiode with multi-dopant implantation
US7205627B2 (en) * 2005-02-23 2007-04-17 International Business Machines Corporation Image sensor cells
JP4224036B2 (ja) * 2005-03-17 2009-02-12 富士通マイクロエレクトロニクス株式会社 フォトダイオード領域を埋め込んだイメージセンサ及びその製造方法

Also Published As

Publication number Publication date
US20080150071A1 (en) 2008-06-26
US7701030B2 (en) 2010-04-20
FR2910713A1 (fr) 2008-06-27

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