FR2900587B1 - METHOD FOR CONTINUOUSLY MECHANICAL CHEMICAL POLISHING (CMP) OF A MULTILAYER MATERIAL - Google Patents

METHOD FOR CONTINUOUSLY MECHANICAL CHEMICAL POLISHING (CMP) OF A MULTILAYER MATERIAL

Info

Publication number
FR2900587B1
FR2900587B1 FR0603894A FR0603894A FR2900587B1 FR 2900587 B1 FR2900587 B1 FR 2900587B1 FR 0603894 A FR0603894 A FR 0603894A FR 0603894 A FR0603894 A FR 0603894A FR 2900587 B1 FR2900587 B1 FR 2900587B1
Authority
FR
France
Prior art keywords
cmp
chemical polishing
multilayer material
mechanical chemical
continuously mechanical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0603894A
Other languages
French (fr)
Other versions
FR2900587A1 (en
Inventor
Georges Michel
Mohamed Ennahali
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KEMESYS
Original Assignee
KEMESYS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KEMESYS filed Critical KEMESYS
Priority to FR0603894A priority Critical patent/FR2900587B1/en
Priority to PCT/FR2007/000754 priority patent/WO2007125224A1/en
Publication of FR2900587A1 publication Critical patent/FR2900587A1/en
Application granted granted Critical
Publication of FR2900587B1 publication Critical patent/FR2900587B1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
FR0603894A 2006-05-02 2006-05-02 METHOD FOR CONTINUOUSLY MECHANICAL CHEMICAL POLISHING (CMP) OF A MULTILAYER MATERIAL Expired - Fee Related FR2900587B1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0603894A FR2900587B1 (en) 2006-05-02 2006-05-02 METHOD FOR CONTINUOUSLY MECHANICAL CHEMICAL POLISHING (CMP) OF A MULTILAYER MATERIAL
PCT/FR2007/000754 WO2007125224A1 (en) 2006-05-02 2007-05-02 Method for continuous mechano-chemical polishing (mcp) of a multilayer material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0603894A FR2900587B1 (en) 2006-05-02 2006-05-02 METHOD FOR CONTINUOUSLY MECHANICAL CHEMICAL POLISHING (CMP) OF A MULTILAYER MATERIAL

Publications (2)

Publication Number Publication Date
FR2900587A1 FR2900587A1 (en) 2007-11-09
FR2900587B1 true FR2900587B1 (en) 2008-12-26

Family

ID=37441989

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0603894A Expired - Fee Related FR2900587B1 (en) 2006-05-02 2006-05-02 METHOD FOR CONTINUOUSLY MECHANICAL CHEMICAL POLISHING (CMP) OF A MULTILAYER MATERIAL

Country Status (2)

Country Link
FR (1) FR2900587B1 (en)
WO (1) WO2007125224A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102189442A (en) * 2010-03-12 2011-09-21 上海西重所重型机械成套有限公司 Grinding and polishing method for low-plasticity metal plate straps

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10573524B2 (en) * 2016-03-04 2020-02-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of chemical mechanical polishing a semiconductor substrate

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5700383A (en) * 1995-12-21 1997-12-23 Intel Corporation Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide
US6204169B1 (en) * 1997-03-24 2001-03-20 Motorola Inc. Processing for polishing dissimilar conductive layers in a semiconductor device
US6001269A (en) * 1997-05-20 1999-12-14 Rodel, Inc. Method for polishing a composite comprising an insulator, a metal, and titanium
JP4095731B2 (en) * 1998-11-09 2008-06-04 株式会社ルネサステクノロジ Semiconductor device manufacturing method and semiconductor device
US6417094B1 (en) * 1998-12-31 2002-07-09 Newport Fab, Llc Dual-damascene interconnect structures and methods of fabricating same
JP4189079B2 (en) * 1999-04-19 2008-12-03 株式会社トクヤマ Polishing method
JP4264781B2 (en) * 1999-09-20 2009-05-20 株式会社フジミインコーポレーテッド Polishing composition and polishing method
KR20020068050A (en) * 1999-12-07 2002-08-24 캐보트 마이크로일렉트로닉스 코포레이션 Chemical-Mechanical Polishing Method
JP3805588B2 (en) * 1999-12-27 2006-08-02 株式会社日立製作所 Manufacturing method of semiconductor device
US6776696B2 (en) * 2002-10-28 2004-08-17 Planar Solutions Llc Continuous chemical mechanical polishing process for polishing multiple conductive and non-conductive layers on semiconductor wafers
US20040266185A1 (en) * 2003-06-30 2004-12-30 Texas Instruments Incorporated Method for reducing integrated circuit defects

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102189442A (en) * 2010-03-12 2011-09-21 上海西重所重型机械成套有限公司 Grinding and polishing method for low-plasticity metal plate straps

Also Published As

Publication number Publication date
FR2900587A1 (en) 2007-11-09
WO2007125224A1 (en) 2007-11-08

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Legal Events

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Year of fee payment: 10

ST Notification of lapse

Effective date: 20170131