FR2898361A1 - Compositions pour le polissage mecano-chimique du dioxyde de silicium et du nitrure de silicium - Google Patents

Compositions pour le polissage mecano-chimique du dioxyde de silicium et du nitrure de silicium Download PDF

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Publication number
FR2898361A1
FR2898361A1 FR0753722A FR0753722A FR2898361A1 FR 2898361 A1 FR2898361 A1 FR 2898361A1 FR 0753722 A FR0753722 A FR 0753722A FR 0753722 A FR0753722 A FR 0753722A FR 2898361 A1 FR2898361 A1 FR 2898361A1
Authority
FR
France
Prior art keywords
polyvinylpyrrolidone
mol
composition according
weight
gen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR0753722A
Other languages
English (en)
French (fr)
Inventor
Sarah J Lane
Charles Yu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Original Assignee
Rohm and Haas Electronic Materials CMP Holdings Inc
Rohm and Haas Electronic Materials LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm and Haas Electronic Materials CMP Holdings Inc, Rohm and Haas Electronic Materials LLC filed Critical Rohm and Haas Electronic Materials CMP Holdings Inc
Publication of FR2898361A1 publication Critical patent/FR2898361A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
FR0753722A 2006-03-08 2007-03-08 Compositions pour le polissage mecano-chimique du dioxyde de silicium et du nitrure de silicium Withdrawn FR2898361A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/372,321 US20070210278A1 (en) 2006-03-08 2006-03-08 Compositions for chemical mechanical polishing silicon dioxide and silicon nitride

Publications (1)

Publication Number Publication Date
FR2898361A1 true FR2898361A1 (fr) 2007-09-14

Family

ID=38336245

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0753722A Withdrawn FR2898361A1 (fr) 2006-03-08 2007-03-08 Compositions pour le polissage mecano-chimique du dioxyde de silicium et du nitrure de silicium

Country Status (7)

Country Link
US (1) US20070210278A1 (US20070210278A1-20070913-C00001.png)
JP (1) JP2007273973A (US20070210278A1-20070913-C00001.png)
KR (1) KR20070092109A (US20070210278A1-20070913-C00001.png)
CN (1) CN101054498A (US20070210278A1-20070913-C00001.png)
DE (1) DE102007008997A1 (US20070210278A1-20070913-C00001.png)
FR (1) FR2898361A1 (US20070210278A1-20070913-C00001.png)
TW (1) TW200736375A (US20070210278A1-20070913-C00001.png)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008182179A (ja) * 2006-12-27 2008-08-07 Hitachi Chem Co Ltd 研磨剤用添加剤、研磨剤、基板の研磨方法及び電子部品
DE102006061891A1 (de) * 2006-12-28 2008-07-03 Basf Se Zusammensetzung zum Polieren von Oberflächen aus Siliziumdioxid
US8366959B2 (en) * 2008-09-26 2013-02-05 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
EP2500929B1 (en) * 2009-11-11 2018-06-20 Kuraray Co., Ltd. Slurry for chemical mechanical polishing and polishing method for substrate using same
CN102464946B (zh) * 2010-11-19 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液及其应用
TWI573864B (zh) * 2012-03-14 2017-03-11 卡博特微電子公司 具有高移除率及低缺陷率之對氧化物及氮化物有選擇性之ｃｍｐ組成物
JP6088505B2 (ja) * 2012-05-30 2017-03-01 株式会社クラレ 化学機械研磨用スラリーおよび化学機械研磨方法
US9281210B2 (en) * 2013-10-10 2016-03-08 Cabot Microelectronics Corporation Wet-process ceria compositions for polishing substrates, and methods related thereto
JP6268069B2 (ja) * 2014-09-12 2018-01-24 信越化学工業株式会社 研磨組成物及び研磨方法
JPWO2016158648A1 (ja) * 2015-03-30 2018-03-01 Jsr株式会社 化学機械研磨用処理組成物、化学機械研磨方法および洗浄方法
EP3394879A2 (en) * 2015-12-22 2018-10-31 Basf Se Composition for post chemical-mechanical-polishing cleaning
CN108117840B (zh) * 2016-11-29 2021-09-21 安集微电子科技（上海）股份有限公司 一种氮化硅化学机械抛光液
US10954411B2 (en) * 2019-05-16 2021-03-23 Rohm And Haas Electronic Materials Cmp Holdings Chemical mechanical polishing composition and method of polishing silicon nitride over silicon dioxide and simultaneously inhibiting damage to silicon dioxide

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW510917B (en) * 1998-02-24 2002-11-21 Showa Denko Kk Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same
GB9924502D0 (en) * 1999-10-15 1999-12-15 Biocompatibles Ltd Polymer blend materials
US6641632B1 (en) * 2002-11-18 2003-11-04 International Business Machines Corporation Polishing compositions and use thereof
US20050090104A1 (en) * 2003-10-27 2005-04-28 Kai Yang Slurry compositions for chemical mechanical polishing of copper and barrier films
US20050108947A1 (en) * 2003-11-26 2005-05-26 Mueller Brian L. Compositions and methods for chemical mechanical polishing silica and silicon nitride
US20060021972A1 (en) * 2004-07-28 2006-02-02 Lane Sarah J Compositions and methods for chemical mechanical polishing silicon dioxide and silicon nitride
US20060083694A1 (en) * 2004-08-07 2006-04-20 Cabot Corporation Multi-component particles comprising inorganic nanoparticles distributed in an organic matrix and processes for making and using same
JP2006100538A (ja) * 2004-09-29 2006-04-13 Fuji Photo Film Co Ltd 研磨用組成物及びそれを用いた研磨方法
US20070176141A1 (en) * 2006-01-30 2007-08-02 Lane Sarah J Compositions and methods for chemical mechanical polishing interlevel dielectric layers

Also Published As

Publication number Publication date
JP2007273973A (ja) 2007-10-18
KR20070092109A (ko) 2007-09-12
TW200736375A (en) 2007-10-01
CN101054498A (zh) 2007-10-17
DE102007008997A1 (de) 2007-09-13
US20070210278A1 (en) 2007-09-13

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Effective date: 20081125