FR2886458B1 - Reseau capacitif - Google Patents

Reseau capacitif

Info

Publication number
FR2886458B1
FR2886458B1 FR0505267A FR0505267A FR2886458B1 FR 2886458 B1 FR2886458 B1 FR 2886458B1 FR 0505267 A FR0505267 A FR 0505267A FR 0505267 A FR0505267 A FR 0505267A FR 2886458 B1 FR2886458 B1 FR 2886458B1
Authority
FR
France
Prior art keywords
capacitive network
capacitive
network
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0505267A
Other languages
English (en)
Other versions
FR2886458A1 (fr
Inventor
Jerome Bach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0505267A priority Critical patent/FR2886458B1/fr
Priority to US11/420,152 priority patent/US7873191B2/en
Publication of FR2886458A1 publication Critical patent/FR2886458A1/fr
Application granted granted Critical
Publication of FR2886458B1 publication Critical patent/FR2886458B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/38—Multiple capacitors, i.e. structural combinations of fixed capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805—Capacitors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR0505267A 2005-05-25 2005-05-25 Reseau capacitif Expired - Fee Related FR2886458B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0505267A FR2886458B1 (fr) 2005-05-25 2005-05-25 Reseau capacitif
US11/420,152 US7873191B2 (en) 2005-05-25 2006-05-24 Capacitive array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0505267A FR2886458B1 (fr) 2005-05-25 2005-05-25 Reseau capacitif

Publications (2)

Publication Number Publication Date
FR2886458A1 FR2886458A1 (fr) 2006-12-01
FR2886458B1 true FR2886458B1 (fr) 2007-09-07

Family

ID=35575445

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0505267A Expired - Fee Related FR2886458B1 (fr) 2005-05-25 2005-05-25 Reseau capacitif

Country Status (2)

Country Link
US (1) US7873191B2 (fr)
FR (1) FR2886458B1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007051871A1 (de) * 2007-10-30 2009-05-07 Robert Bosch Gmbh Mikromechanisches Bauelement und Verfahren zum Betrieb eines mikromechanischen Bauelements
US8076893B2 (en) * 2008-09-04 2011-12-13 The Board Of Trustees Of The University Of Illinois Displacement actuation and sensing for an electrostatic drive
TW201110167A (en) * 2009-09-04 2011-03-16 Novatek Microelectronics Corp Metal-oxide-metal capacitor having low parasitic capacitor
US8594604B2 (en) * 2009-12-18 2013-11-26 Nxp, B.V. Fringe capacitor circuit
JPWO2012056607A1 (ja) 2010-10-26 2014-03-20 パナソニック株式会社 容量配列体およびそれを備えた信号処理装置
EP2458636A1 (fr) * 2010-11-29 2012-05-30 Nxp B.V. Réseau de compensation pour transistor RF
FR2976715B1 (fr) 2011-06-15 2013-06-28 St Microelectronics Sa Dispositif capacitif integre et convertisseur analogique numerique integre comprenant un tel dispositif
KR101585959B1 (ko) * 2015-02-10 2016-01-20 전자부품연구원 무선랜 ap의 adc에 적용 가능한 mom 커패시터
DE102018104459A1 (de) * 2018-02-27 2019-08-29 Tdk Electronics Ag Vielschichtbauelement mit externer Kontaktierung
US10629672B2 (en) * 2018-07-31 2020-04-21 Taiwan Semiconductor Manufacturing Co., Ltd. Capacitor structure with low capacitance
CN114203442B (zh) * 2021-12-03 2023-11-03 灿芯半导体(上海)股份有限公司 一种用于高精度电容阵列的电容单元

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4093892A (en) * 1967-01-16 1978-06-06 Varian Associates, Inc. Ring-and-bar slow wave circuits employing ceramic supports at the bars
US5208725A (en) 1992-08-19 1993-05-04 Akcasu Osman E High capacitance structure in a semiconductor device
US5373245A (en) * 1993-07-12 1994-12-13 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Capaciflector camera
US5583359A (en) * 1995-03-03 1996-12-10 Northern Telecom Limited Capacitor structure for an integrated circuit
US6000280A (en) * 1995-07-20 1999-12-14 Cornell Research Foundation, Inc. Drive electrodes for microfabricated torsional cantilevers
FR2768852B1 (fr) 1997-09-22 1999-11-26 Sgs Thomson Microelectronics Realisation d'un condensateur intermetallique
US6473713B1 (en) * 1999-09-20 2002-10-29 American Gnc Corporation Processing method for motion measurement
WO2001053872A1 (fr) * 2000-01-18 2001-07-26 Cornell Research Foundation, Inc. Micromiroir a silicium monocristallin et matrice
EP1374146B1 (fr) * 2000-12-05 2005-10-19 Validity Sensors Inc. Systemes de detection d'empreinte digitale capacitifs a ouverture de glissement et procedes associes
EP1390902A4 (fr) * 2001-04-27 2008-10-15 Atrua Technologies Inc Systeme de capteur capacitif a sensibilite de mesure de capacitance amelioree
US6542351B1 (en) * 2001-06-28 2003-04-01 National Semiconductor Corp. Capacitor structure
JP4024572B2 (ja) * 2002-03-28 2007-12-19 ユーディナデバイス株式会社 インタディジタルキャパシタを有するデバイス
US6880134B2 (en) * 2003-04-09 2005-04-12 Freescale Semiconductor, Inc. Method for improving capacitor noise and mismatch constraints in a semiconductor device

Also Published As

Publication number Publication date
US20060270145A1 (en) 2006-11-30
US7873191B2 (en) 2011-01-18
FR2886458A1 (fr) 2006-12-01

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Legal Events

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Effective date: 20140131