FR2879627B1 - Procede de croissance de nanofils de beta-sic ou de alpha-si3n4, eventuellement enrobes - Google Patents
Procede de croissance de nanofils de beta-sic ou de alpha-si3n4, eventuellement enrobesInfo
- Publication number
- FR2879627B1 FR2879627B1 FR0413630A FR0413630A FR2879627B1 FR 2879627 B1 FR2879627 B1 FR 2879627B1 FR 0413630 A FR0413630 A FR 0413630A FR 0413630 A FR0413630 A FR 0413630A FR 2879627 B1 FR2879627 B1 FR 2879627B1
- Authority
- FR
- France
- Prior art keywords
- nanowils
- si3n4
- sic
- alpha
- coated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/005—Growth of whiskers or needles
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
- C30B29/605—Products containing multiple oriented crystallites, e.g. columnar crystallites
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Inorganic Fibers (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0413630A FR2879627B1 (fr) | 2004-12-21 | 2004-12-21 | Procede de croissance de nanofils de beta-sic ou de alpha-si3n4, eventuellement enrobes |
PCT/FR2005/003145 WO2006067308A1 (fr) | 2004-12-21 | 2005-12-15 | Procede de croissance de nanofils de beta-sic ou de alpha-si3n4, eventuellement enrobes |
EP05850533A EP1831438A1 (fr) | 2004-12-21 | 2005-12-15 | Procede de croissance de nanofils de beta-sic ou de alpha-si3n4, eventuellement enrobes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0413630A FR2879627B1 (fr) | 2004-12-21 | 2004-12-21 | Procede de croissance de nanofils de beta-sic ou de alpha-si3n4, eventuellement enrobes |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2879627A1 FR2879627A1 (fr) | 2006-06-23 |
FR2879627B1 true FR2879627B1 (fr) | 2007-09-21 |
Family
ID=34953153
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0413630A Expired - Fee Related FR2879627B1 (fr) | 2004-12-21 | 2004-12-21 | Procede de croissance de nanofils de beta-sic ou de alpha-si3n4, eventuellement enrobes |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1831438A1 (fr) |
FR (1) | FR2879627B1 (fr) |
WO (1) | WO2006067308A1 (fr) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100802182B1 (ko) * | 2006-09-27 | 2008-02-12 | 한국전자통신연구원 | 나노선 필터, 그 제조방법 및 흡착물 제거방법, 이를구비한 필터링 장치 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5404836A (en) * | 1989-02-03 | 1995-04-11 | Milewski; John V. | Method and apparatus for continuous controlled production of single crystal whiskers |
CA2043679A1 (fr) * | 1990-07-24 | 1992-01-25 | Lanxide Technology Company, Lp | Preparation de fibres whiskers a base de carbure de silicium |
-
2004
- 2004-12-21 FR FR0413630A patent/FR2879627B1/fr not_active Expired - Fee Related
-
2005
- 2005-12-15 WO PCT/FR2005/003145 patent/WO2006067308A1/fr active Application Filing
- 2005-12-15 EP EP05850533A patent/EP1831438A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
EP1831438A1 (fr) | 2007-09-12 |
WO2006067308A1 (fr) | 2006-06-29 |
FR2879627A1 (fr) | 2006-06-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20130830 |