FR2846789B1 - Dispositif semi-conducteur a transistors mos a couche d'arret de gravure ayant un stress residuel ameliore et procede de fabrication d'un tel dispositif semi-conducteur - Google Patents
Dispositif semi-conducteur a transistors mos a couche d'arret de gravure ayant un stress residuel ameliore et procede de fabrication d'un tel dispositif semi-conducteurInfo
- Publication number
- FR2846789B1 FR2846789B1 FR0213837A FR0213837A FR2846789B1 FR 2846789 B1 FR2846789 B1 FR 2846789B1 FR 0213837 A FR0213837 A FR 0213837A FR 0213837 A FR0213837 A FR 0213837A FR 2846789 B1 FR2846789 B1 FR 2846789B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- manufacturing
- mos transistor
- stop layer
- residual stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0213837A FR2846789B1 (fr) | 2002-11-05 | 2002-11-05 | Dispositif semi-conducteur a transistors mos a couche d'arret de gravure ayant un stress residuel ameliore et procede de fabrication d'un tel dispositif semi-conducteur |
US10/701,165 US7187038B2 (en) | 2002-11-05 | 2003-11-04 | Semiconductor device with MOS transistors with an etch-stop layer having an improved residual stress level and method for fabricating such a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0213837A FR2846789B1 (fr) | 2002-11-05 | 2002-11-05 | Dispositif semi-conducteur a transistors mos a couche d'arret de gravure ayant un stress residuel ameliore et procede de fabrication d'un tel dispositif semi-conducteur |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2846789A1 FR2846789A1 (fr) | 2004-05-07 |
FR2846789B1 true FR2846789B1 (fr) | 2005-06-24 |
Family
ID=32104469
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0213837A Expired - Fee Related FR2846789B1 (fr) | 2002-11-05 | 2002-11-05 | Dispositif semi-conducteur a transistors mos a couche d'arret de gravure ayant un stress residuel ameliore et procede de fabrication d'un tel dispositif semi-conducteur |
Country Status (2)
Country | Link |
---|---|
US (1) | US7187038B2 (fr) |
FR (1) | FR2846789B1 (fr) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7015082B2 (en) * | 2003-11-06 | 2006-03-21 | International Business Machines Corporation | High mobility CMOS circuits |
US7164163B2 (en) * | 2005-02-22 | 2007-01-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Strained transistor with hybrid-strain inducing layer |
EP1717864A1 (fr) * | 2005-04-27 | 2006-11-02 | STMicroelectronics ( Crolles 2) SAS | Méthode pour gérer la configuration du stress dans le canal d'un transistor MOS et circuit intégré correspondant |
JP2006324278A (ja) * | 2005-05-17 | 2006-11-30 | Sony Corp | 半導体装置およびその製造方法 |
US20070013070A1 (en) * | 2005-06-23 | 2007-01-18 | Liang Mong S | Semiconductor devices and methods of manufacture thereof |
US7829978B2 (en) * | 2005-06-29 | 2010-11-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Closed loop CESL high performance CMOS device |
US7485517B2 (en) * | 2006-04-07 | 2009-02-03 | United Microelectronics Corp. | Fabricating method of semiconductor device |
US7521307B2 (en) * | 2006-04-28 | 2009-04-21 | International Business Machines Corporation | CMOS structures and methods using self-aligned dual stressed layers |
US7585720B2 (en) * | 2006-07-05 | 2009-09-08 | Toshiba America Electronic Components, Inc. | Dual stress liner device and method |
US7675118B2 (en) * | 2006-08-31 | 2010-03-09 | International Business Machines Corporation | Semiconductor structure with enhanced performance using a simplified dual stress liner configuration |
US20080087965A1 (en) * | 2006-10-11 | 2008-04-17 | International Business Machines Corporation | Structure and method of forming transistor density based stress layers in cmos devices |
JP5132943B2 (ja) * | 2007-01-24 | 2013-01-30 | パナソニック株式会社 | 半導体装置 |
US20090095991A1 (en) * | 2007-10-11 | 2009-04-16 | International Business Machines Corporation | Method of forming strained mosfet devices using phase transformable materials |
US8776514B2 (en) * | 2007-12-14 | 2014-07-15 | Lei Wu | Electrothermal microactuator for large vertical displacement without tilt or lateral shift |
KR102462134B1 (ko) | 2015-05-19 | 2022-11-02 | 삼성전자주식회사 | 배선 구조물, 배선 구조물 형성 방법, 반도체 장치 및 반도체 장치의 제조 방법 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5332697A (en) * | 1989-05-31 | 1994-07-26 | Smith Rosemary L | Formation of silicon nitride by nitridation of porous silicon |
US5710450A (en) * | 1994-12-23 | 1998-01-20 | Intel Corporation | Transistor with ultra shallow tip and method of fabrication |
US5795833A (en) * | 1996-08-01 | 1998-08-18 | Taiwan Semiconductor Manufacturing Company, Ltd | Method for fabricating passivation layers over metal lines |
JPH113869A (ja) * | 1997-06-11 | 1999-01-06 | Nec Corp | 半導体装置の製造方法 |
US6228694B1 (en) * | 1999-06-28 | 2001-05-08 | Intel Corporation | Method of increasing the mobility of MOS transistors by use of localized stress regions |
US6372569B1 (en) * | 2000-01-18 | 2002-04-16 | Chartered Semiconductor Manufacturing Ltd. | Selective formation of hydrogen rich PECVD silicon nitride for improved NMOS transistor performance |
US6580170B2 (en) * | 2000-06-22 | 2003-06-17 | Texas Instruments Incorporated | Semiconductor device protective overcoat with enhanced adhesion to polymeric materials |
JP2003060076A (ja) * | 2001-08-21 | 2003-02-28 | Nec Corp | 半導体装置及びその製造方法 |
US6573172B1 (en) * | 2002-09-16 | 2003-06-03 | Advanced Micro Devices, Inc. | Methods for improving carrier mobility of PMOS and NMOS devices |
US6762085B2 (en) * | 2002-10-01 | 2004-07-13 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a high performance and low cost CMOS device |
-
2002
- 2002-11-05 FR FR0213837A patent/FR2846789B1/fr not_active Expired - Fee Related
-
2003
- 2003-11-04 US US10/701,165 patent/US7187038B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US7187038B2 (en) | 2007-03-06 |
US20040135234A1 (en) | 2004-07-15 |
FR2846789A1 (fr) | 2004-05-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20070731 |