FR2841380A1 - Encapsulation of an object under a controlled atmosphere in a cavity provided with a vent that is stopped with a porous material prior to final sealing - Google Patents

Encapsulation of an object under a controlled atmosphere in a cavity provided with a vent that is stopped with a porous material prior to final sealing Download PDF

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Publication number
FR2841380A1
FR2841380A1 FR0207853A FR0207853A FR2841380A1 FR 2841380 A1 FR2841380 A1 FR 2841380A1 FR 0207853 A FR0207853 A FR 0207853A FR 0207853 A FR0207853 A FR 0207853A FR 2841380 A1 FR2841380 A1 FR 2841380A1
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Prior art keywords
cavity
porous material
porous
device
evens
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FR0207853A
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French (fr)
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Cyril Guedj
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Commissariat a l'Energie Atomique et aux Energies Alternatives
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Commissariat a l'Energie Atomique et aux Energies Alternatives
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00261Processes for packaging MEMS devices
    • B81C1/00333Aspects relating to packaging of MEMS devices, not covered by groups B81C1/00269 - B81C1/00325
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/16Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/26Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device including materials for absorbing or reacting with moisture or other undesired substances, e.g. getters
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B81MICROSTRUCTURAL TECHNOLOGY
    • B81CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00Forming microstructural systems
    • B81C2203/01Packaging MEMS
    • B81C2203/0145Hermetically sealing an opening in the lid
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • H01L27/14649Infra-red imagers
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5237Passivation; Containers; Encapsulation, e.g. against humidity
    • H01L51/5253Protective coatings
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L51/00Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof
    • H01L51/50Solid state devices using organic materials as the active part, or using a combination of organic materials with other materials as the active part; Processes or apparatus specially adapted for the manufacture or treatment of such devices, or of parts thereof specially adapted for light emission, e.g. organic light emitting diodes [OLED] or polymer light emitting devices [PLED];
    • H01L51/52Details of devices
    • H01L51/5237Passivation; Containers; Encapsulation, e.g. against humidity
    • H01L51/5259Passivation; Containers; Encapsulation, e.g. against humidity including getter material or desiccant

Abstract

The encapsulation of an object (2) under a controlled atmosphere consists of: (a) placing the object in a cavity (12) provided with a vent (6) connecting the inside of the cavity with the outside; (b) putting the cavity under a controlled atmosphere; (c) closing the vent in an airtight manner, by stopping it with an intermediate layer (16) in a porous material before sealing it.

Description

B14172.3/PR B14172.3 / PR

PROCEDE D' ENCAPSULATION D'UN OBJET SOUS ATMOSPHERE METHOD OF PACKAGING AN OBJECT ATMOSPHERE

CONTROLEE CONTROLLED

DESCRIPTION DESCRIPTION

DOMAINE TECHNIQUE TECHNICAL AREA

La presente invention concerne un procede d' encapsulation d' un objet sous atmosphere contr81ee, c'est a dire sous vice ou sous une atmosphere gazeuse, par exemple une atmosphere diun gaz neutre tel que The present invention relates to a method for encapsulation of a sub atmosphere contr81ee object, that is to say in defect or in a gaseous atmosphere, for example an atmosphere diun neutral gas such as

['helium. ['helium.

L' invention stapplique principalement aux dispositifs microelectroniques ou optoelectroniques ainsi qu'aux dispositifs semiconducteurs et, plus particulierement, aux microbolometres, aux dispositifs a micropointes ("microtip") et aux dispositifs a ecrans plats. The invention stapplique mainly to microelectronic devices or optoelectronic devices as well as semiconductors and, more particularly, to microbolometers, devices microtip ( "microtip") and devices has flat screens. Wile s'applique egalement aux dispositifs a base d'autres materiaux que les semiconducteurs et aux Wile also applies to devices based on other materials as semiconductors and

dispositifs a couches minces. devices has thin layers.

Plus generalement, l' invention s'applique a tout domaine ou le confinement d'un objet sous atmosphere contr81ee presente un interet, par exemple les domaines nucleaire et spatial, les telecommunications, la medecine, l' instrumentation, les More generally, the invention applies to any domain or confinement under an atmosphere contr81ee object presents an interest, such as nuclear and space fields, telecommunications, medicine, the instrumentation,

capteurs et la biologic. sensors and biology.

ETAT DE LA TECHNIQUE ANTERIEURE STATE OF THE ART

On connalt de nombreuses methodes pour confiner, ou encapsuler, un dispositif dans une It connalt many methods to contain or encapsulate a device in a

atmosphere contr81ee. contr81ee atmosphere.

L' encapsulation a pour but d'empecher des gaz contaminants d'etre en contact avec ce dispositif, tout en permettant aux informations, par exemple aux signaux electriques, de circuler du dispositif vers le monde exterieur. The encapsulation is designed to prevent the contaminants from being in contact with this gas device, while allowing the information, for example the electrical signals, to move the device to the outside world. On considere uniquement dans ce qui suit le confinement d'une zone apres y avoir fait le vice. We consider only the following containment of an area after having made vice. En fonction des besoins, on peut avantageusement remplacer le vice par un gaz predefini, en modifiant de facon Depending on requirements, it can advantageously replace the vice by a known predefined gas, changing of way

appropriee le procede de confinement utilise. appropriate containment process used.

Une solution couramment employee pour l' encapsulation diun dispositif microelectronique consiste a placer ce dernier dans une enceinte isolante, par exemple un boltier scelle, que l'on met sous vice par pompage. A commonly employed solution for encapsulation diun microelectronic device comprises placing the latter in an insulating enclosure, for example a boltier seals, that is brought into vice by pumping. Le dispositif est relic a l'exterieur par un assemblage hermetique de pistes conductrices. The device is relic on the outside by a hermetic assembly of conductive tracks. Le vice est maintenu par soudure ou par Vice is maintained by welding or

scellement hermetique. hermetic sealing.

Cette solution est couteuse et done difficile a mettre en uvre dans le cas diune production industrielle. This solution is expensive and therefore difficult to implement in industrial output Diune case. Il est par consequent avantageux d'utiliser une methode collective, afin de It is therefore advantageous to use a collective method to

diminuer les couts. reduce costs.

Precisons des maintenant que la presente invention peut s'appliquer a une encapsulation collective ou individuelle sur tranche de silicium Specify for now that the present invention can be applied to a group or individual encapsulation on silicon wafer

("silicon wafer"). ( "Silicon wafer").

Nous presentons ci-apres l'etat de la technique pour une telle encapsulation, dans le domaine We present here after the state of the art for such encapsulation, in the field

de la microelectronique ou de lioptoelectronique. of microelectronics or lioptoelectronique.

I1 existe de nombreuses techniques pour former des cavites depressurisees. I1 are many techniques to form cavities depressurized. On connalt principalement les techniques de soudure ("bonding"), It connalt mainly welding techniques ( "bonding")

de scellement d' evens et de piegeage de contaminants. sealing of evens and contaminant trapping.

Cependant, ces techniques connues However, these known techniques

presentent des inconvenients. have drawbacks.

Par exemple, en ce qui concerne les diverges techniques de soudure, on peut citer en particulier le risque de microfissuration, les contraintes de mise en uvre, l'utilisation de traitements agressifs, la fragilite, la sensibilite a l'humidite et le risque d'une contamination par ltor dans le cas d'une soudure par eutectique utilisant ce metal. For example, regarding the welding techniques diverged include in particular the risk of micro cracks in implementation constraints, the use of aggressive treatments, fragility, sensitivity to moisture and the risk of 'contamination ltor in the case of a eutectic solder by using this metal. Des techniques de bouchage d'une cavite par CVD ciest a dire par dep8t en phase vapeur ("chemical vapor deposition"), par evaporation ou par pulverisation ont egalement ete utilisees. capping techniques a cavity by CVD has ciest say dep8t vapor ( "chemical vapor deposition"), by evaporation or sputtering have also been used. Mais la press ion lors du depot ne permet generalement pas de garantir un ultravide dans la cavite, dans des But the press ion upon the deposit generally do not guarantee an ultrahigh vacuum in the cavity, in

conditions industrielles. industrial conditions.

En outre, une technique particuliere de bouchage d' evens est divulguee par les documents suivants: [1] US 6 036872A, RA Wood et al. Furthermore, a special sealing technique of evens is disclosed in the following documents: [1] US 6 036872A, RA Wood et al. [2] Article de M. Bartek et al., Vacuum sealing of microcavities using metal evaporation, [2] Article Mr. Bartek et al., Vacuum sealing of microcavities using metal evaporation

Sensors and Actuators, A61 (1997), pages 364 a 368. Sensors and Actuators, A61 (1997), pages 364 to 368.

Le document [1] decrit un dispositif hybride alors que le document [2] decrit un dispositif monolithique. Document [1] describes a hybrid device while the document [2] describes a monolithic device. Selon la technique divulguee, on depose une couche d'un materiau etanche pour boucher un event. According to the disclosed technique, deposited a layer of waterproof material to fill an event. Ce materiau doit etre imperativement non poreux pour This material must be non-porous to imperatively

eviter toute fuite. avoid leakage.

Par cette technique, la basse pression qu'il est possible d'obtenir dans la cavite pourvue de l' evens est limitee inferieurement par celle qui est utilisee lors du dep8t du materiau etanche, ce qui restreint considerablement le niveau de vice By this technique, the low pressure that can be obtained in the cavity provided for the evens is limited downwards by one that is used when dep8t of the material sealed, limiting significantly the level of vice

accessible. accessible.

EXPOSE DE L'INVENTION DISCLOSURE OF INVENTION

La presente invention a pour but de The present invention aims to

remedier a cet inconvenient. remedy this inconvenience.

Le procede objet de l' invention est une amelioration de la technique decrite dans le document [1] et consiste a former une couche intermediaire en The process object of the invention is an improvement of the technique described in document [1] and consists in forming an intermediate layer

materiau poreux avant la fermeture etanche de l' evens. porous material prior to sealing of the evens.

Cette couche intermediaire permet, apres avoir obtenu l' atmosphere adequate dans la cavite, d'avoir le temps de former la couche de materiau etanche. This allows intermediate layer, after having obtained the adequate atmosphere in the cavity, having the time of forming the layer of waterproof material. En effet, les fuites a travers cette couche intermediaire en materiau poreux vent relativement lenses par rapport au temps de depSt de la couche de materiau etanche. Indeed, leakage through the intermediate layer of relatively porous material lenses wind with respect to time of depSt of the layer of waterproof material. Cette derriere peut done etre formee This can, therefore, be behind FORMED

meme dans une atmosphere polluante. even in a clean atmosphere.

En d'autres termes, la presente invention consiste a utiliser un materiau poreux pour ralentir les echanges gazeux entre l'interieur de la cavite et In other words, the present invention is to use a porous material to slow gas exchange between the interior of the cavity and

le milieu exterieur. the external environment.

I1 est alors possible de vider lentement cette cavite en la disposant dans une enceinte a vice, eventuellement a une temperature superieure a la temperature ambiante (de l'ordre de 20 C). I1 is then possible to slowly drain the cavity in arranging it in an enclosure a vice, optionally has a temperature above room temperature (about 20 C). Dans un deuxieme temps on rebouche, par une technique In a second time is blocked again, for technical

appropriee, le trou obture par le materiau poreux. appropriate, the hole closes by the porous material.

Comme les echanges gazeux entre la cavite et le milieux exterieur vent ralentis, il est possible de reboucher ce trou a une pression elevee, sans pour As the gas exchange between the cavity and the slow wind outdoor environments, it is possible to reseal this hole at an elevated pressure, without

autant "casser le vice" dans la cavite. as "breaking the vice" in the cavity.

La presente invention permet liencapsulation sous ultravide, meme a des temperatures The present invention allows liencapsulation ultrahigh vacuum, even at temperatures

inferieures a 300 C. below 300 C.

Le materiau poreux permet de vider la cavite dans des temps et a des temperatures qui vent The porous material used to empty the cavity in time and at temperatures that wind

compatibles avec des procedes industrials. compatible with industrials processes.

L'invention peut etre mise en uvre dans une grande variete de geometries ou de sequences de realisation. The invention may be implementation in a wide variety of geometries or realization of sequences. De fa,con precise, la presente invention concerne un procede d' encapsulation d' au moins un objet sous atmosphere contr81ee, procede dans lequel - on place cet objet dans une cavite, cette cavite etant pourvue d'au moins un event prevu pour mettre l'interieur de la cavite en contact avec l'exterieur de celle-ci, - on met cette cavite sous une atmosphere controlee et - on ferme l' evens de fa,con etanche, ce procede etant caracterise en ce que l'on obture l' evens par une couche intermediaire en materiau Of fa, con precise, the present invention relates to a method of encapsulation of at least one sub object contr81ee atmosphere, in which method - the object is placed in a cavity, said cavity being provided with at least one vent provided in order to the interior of the cavity in contact with the outside of it - we put this cavity under a controlled atmosphere and - we close the evens of fa con waterproof, such process being characterized in that said one closes the evens by an intermediate layer of material

poreux avant de fermer lt evens de facon etanche. porous before closing lt evens of waterproof manner.

Selon un mode de mise en uvre prefere du procede objet de ['invention, on ferme lievent par une couche d' encapsulation etanche que l' on forme sur la According to an out in the preferred embodiment of the method of [invention lievent is closed by a layer of waterproof encapsulation that is formed on the

couche intermediaire en materiau poreux. intermediate layer of porous material.

Selon un mode de mise en muvre particulier du procede objet de ['invention, - on forme un dispositif ainsi qu'une structure d' encapsulation de ce dispositif, ce dernier constituent ['objet a encapsuler, - on forme, autour du dispositif, la cavite pourvue de l' evens, - on met cette cavite sous l' atmosphere contr81ee et - - on ferme l' evens de facon etanche, et lton obture l' evens par la couche intermediaire en materiau poreux avant de fermer According to a particular embodiment of the muvre the object of [method invention - forming a device and a structure for encapsulating the device, the latter is [subject to be encapsulated, - forming around the device, the cavity provided with the evens, - this cavity is placed under the atmosphere contr81ee and - - is closed the evens in sealed manner, and LTON closes the evens by the intermediate layer of porous material before closing

l' evens de facon etanche. the evens of waterproof way.

Le dispositif que l'on forme et que l'on encapsule peut etre un microcomposant ou un ensemble de microcomposants tels que des composants microelectroniques, des composants optoelectroniques, The device that is formed and that is encapsulated may be a microcomponent or a set of microcomponents such as microelectronic components, optoelectronic components,

des capteurs ou des actionneurs. sensors or actuators.

Selon un mode de mi se en muvre part i cul ier de l 'invention, le dispositif a encapsuler est forme sur un substrat en silicium et le materiau poreux est choisi parmi le silicium poreux, le germanium poreux et les alliages du type Sil-x-yGexcy poreux, avec O<x<l,O<y<l,O<x+y<1. In one embodiment of mi is in muvre share i ass ist of the invention, the device to be encapsulated is formed on a silicon substrate and the porous material is selected from the Porous silicon, porous germanium and alloys of Sil-x -yGexcy porous, with O <x ​​<l, O <y <l, O <x ​​+ y <1. Selon un autre mode de mise en muvre particulier, le dispositif est forme sur un substrat et le materiau poreux est un alliage poreux comportant des According to another particular mode of muvre setting, the device is formed on a substrate and the porous material is a porous alloy having

elements chimiques qui vent presents dans ce substrat. chemical elements present in the substrate wind.

Selon un premier mode de mise en muvre particulier du procede objet de ['invention, l' atmosphere controlee est le vice, on place la cavite pourvue de la couche intermediaire en materiau poreux dans une enceinte a vice et l'on fait le vice dans la cavite, a travers cette couche intermediaire, avant de According to a first mode in particular muvre out the object of [method invention, the controlled atmosphere is vice, the cavity is instead provided with the intermediate layer of porous material in an enclosure a vice and vice is done in the cavity through this intermediate layer, before

fermer l' evens de facon etanche. close the evens of waterproof way.

Dans ce cas, le materiau poreux peut etre In this case, the porous material can be

un materiau poreux de type getter. a porous getter material type.

Selon un deuxieme mode de mise en muvre particulier, l' atmosphere contr81ee est un gaz, on place la cavite pourvue de la couche intermediaire en materiau poreux dans une enceinte contenant ce gaz et l'on remplit la cavite de ce gaz, a travers cette couche intermediaire, avant de fermer l' evens de facon According to a second particularly muvre embodiment, the atmosphere contr81ee is a gas, the cavity is instead provided with the intermediate layer of porous material in a chamber containing the gas and filling the cavity of the gas through this intermediate layer, before closing the way of evens

etanche. waterproof.

On donne ci-apres divers avantages de ['invention. below after we give various benefits of [invention. Le procede objet de l' invention permet la mise sous ultra-vice (ou sous atmosphere gazeuse controlee), a basse temperature (inferieure au seuil de degradation des dispositifs) et de maniere collective (done a fortiori de maniere individuelle), de dispositifs formes sur des plaquettes semiconductrices The method of the invention allows the power ultra-vice (or gaseous controlled atmosphere), at low temperature (lower the degradation threshold devices) and collective manner (therefore a fortiori of individual way) devices forms on semiconductor wafers

(par exemple en silicium). (E.g. silicon).

Ce procede permet de conserver un haut niveau de purete du milieu dans lequel est immerge un dispositif, lors de la fabrication puis de la mise en boltier. This process allows to maintain a high level of purity of the medium in which is immersed a device during fabrication and then setting boltier. Avec ['invention, le dispositif n'a pas a subir une remise a l'air ou un choc thermique, chimique ou electrique, contrairement a ce qui a lieu avec With [the invention, the device does not have to undergo a fitness looks or thermal shock, chemical or electrical, unlike what happens with

d' autres techniques d' encapsulation. other encapsulation techniques.

Le procede objet de l' invention s'integre parfaitement aux techniques collectives de la microelectronique ou de lioptoelectronique, et permet The process object of the invention is integrated perfectly collective techniques of microelectronics or lioptoelectronique and allows

done de diminuer les couts de fabrication. therefore reduce manufacturing costs.

En outre, ce procede est relativement simple car il ne necessite pas lTutilisation de niveaux In addition, such process is relatively simple because it does not need lTutilisation levels

de masquage complexes pour aboutir a liencapsulation. complex masking to achieve a liencapsulation.

De plus, ce procede autorise le choix des parametres de mise en uvre dans des plages assez larges et staccommode aisement diune grande variete de In addition, such process allows the choice of layout parameters out within wide ranges and easily staccommode large variety of Diune

materiaux et de processus operatoires. materials and business processes.

Pour encapsuler sous vice un objet conformement a ['invention, il suffit de deposer un materiau poreux approprie, choisi dans le vaste ensemble de tels materiaux (verres, polymeres, semi conducteurs), puis de retirer les gaz contaminants dans lenceinte a vice par un pompage de duree suffisante, et enfin de deposer la couche d' encapsulation finale en un temps suffisamment court pour eviter le remplissage de la cavite contenant ['objet. To encapsulate under vice item in accordance [invention, it is sufficient to deposit a porous suitable material selected from the wide range of such materials (glass, polymers, semiconductors) and then removing the contaminant gases in the speaker system has vice by pumping sufficient time, and finally to deposit the layer of final encapsulation in a sufficiently short time to avoid filling the cavity containing [object.

BREVE DESCRIPTION DES DESSINS BRIEF DESCRIPTION OF DRAWINGS

La presente invention sera mieux comprise a The present invention will be better understood

la lecture de la description d'exemples de realisation reading the description of examples of realization

donnes ci-apres, a titre purement indicatif et nullement limitatif, en faisant reference aux dessins annexes, sur lesquels: - la figure 1A est une vue en coupe schematique diun dispositif encapsule conformement a ['invention, - la figure 1B est une vue en coupe schematique diun autre dispositif encapsule conformement a ['invention, et - les figures 2A a 2G illustrent schematiquement diverges etapes d'un mode de mise en data following after, a purely indicative and non limiting example, making reference to the accompanying drawings, in which: - Figure 1A is a schematic sectional view diun device encapsulates accordance [invention, - Figure 1B is a perspective sectional schematic diun other device encapsulates accordance [invention, and - figures 2A 2G illustrate schematically steps of a diverged mode setting

muvre particulier du procede obet de ['invention. particular muvre of Obet METHOD [the invention.

EXPOSE DETAILLE DE MODES DE REALISATION PARTICULIERS DETAILED DESCRIPTION OF PARTICULAR EMBODIMENTS

La figure 1A illustre schematiquement une encapsulation diun dispositif microelectronique 2 Figure 1A schematically illustrates a microelectronic device encapsulation diun 2

conformement a ['invention. in accordance with [ 'invention.

Ce dispositif 2 peut etre un simple composant microelectronique ou un ensemble de tels composants, par exemple une puce ("chip") microelectronique ou une matrice de composants tous identiques. This device 2 may be a single microelectronic component or an assembly of such components, for example a chip ( "chip") microelectronics or matrix of identical components. Ce dispositif 2 est forme sur un substrat 4 comprenant, comme on le volt sur la figure 1A, un The device 2 is formed on a substrate 4 comprising, as one volt in Figure 1A, a

percage evase 6 a proximite du dispositif 2. drilling flared 6 close to the device 2.

Dans cet exemple, on utilise aussi un autre substrat 8 qui est pourvu d'un evidement 10 dont la In this example, also uses another substrate 8 which is provided with a recess 10 whose

taille est superieure a celle du dispositif 2. larger than that of the device 2.

On assemble les substrats 4 et 8 l'un a l'autre de facon que le dispositif 2 se trouve en regard de cette evidement 10. On definit ainsi une Assembling the substrates 4 and 8 one to the other so that the device 2 is located opposite this recess 10. This defines a

cavite 12 dans laquelle se trouve le dispositif 2. cavity 12 is located in the device 2.

Pour assembler les substrats 4 et 8, on utilise un anneau de scellement 14 qui delimite une zone de ['assemblage, contenant la cavite 12 (et done To assemble the substrates 4 and 8, using a sealing ring 14 which delimits an area of ​​[assembly containing the cavity 12 (and therefore

le dispositif 2) ainsi que le percage 6. the device 2) and the drilling 6.

L'anneau de scellement 14 permet de fixer les substrats l'un a l'autre de fa,con etanche pour pouvoir faire ensuite le vice dans la zone qu'il delimite et done dans la cavite 12, par l'intermediaire du per,cage 6 qui consiste un event, en vue d'encapsuler The ring seal 14 secures the substrates to the other FA, con waterproof to then be able to vice in the area it delimits and therefore in the cavity 12, through the intermediary of the per, cage 6 which is an event in order to encapsulate

sous vice le dispositif 2. Vice under the device 2.

Conformement a ['invention, on obture l' evens 6 au moyen d'une couche intermediaire 16 en materiau poreux. In accordance with [invention, it closes the evens 6 by means of an intermediate layer 16 of porous material. On depose cette derriere sur le substrat 4 de fa,con a boucher lt evens 6, la couche de materiau poreux sietendant jusqu'a l'autre substrat 8 We deposited this behind on the substrate 4 of fa, con has butcher lt evens 6, the porous material layer sietendant until another substrate 8

comme on le volt sur la figure 1A. as the Volt in Figure 1A.

Cette couche 16 permet de ralentir les echanges gazeux entre la cavite 12 et le milieu exterieur. This layer 16 slows the gas exchange between the cavity 12 and the outside environment. On dispose ensuite la structure obtenue dans une enceinte a vice 18 et l'on fait le vice dans cette derriere pendant un temps raisonnable, typiquement quelques heures. It then has the structure obtained in an enclosure 18 and a vice is done behind the vice in this for a reasonable time, typically a few hours. La cavite 12 se vice alors The cavity 12 is then Deputy

a travers la couche poreuse 16. through the porous layer 16.

On depose ensuite une couche d'encapsulation etanche ou couche de scellement etanche sur la couche en materiau poreux 16 de fa,con a then depositing a cap layer waterproof or waterproof sealing layer on the porous material layer 16 of fa, a con

fermer l' evens 6 et done la cavite 12 de fa,con etanche. close the evens 6 and therefore the cavity 12 of fa, con sealed.

Ce depot est rendu possible par le fait que le vice se maintient pendant plusieurs minutes dans la cavite. This deposit is made possible by the fact that the vice continues for several minutes in the cavity. Le dispositif 2 est ainsi encapsule sous vice dans l'exemple de la figure 1A. The device 2 is thus encapsulated in vice in the example of Figure 1A. La figure 1B est une variante de la figure Figure 1B is a variant of Figure

1A et elle est a comparer a la cavite scellee micro- 1A and is to be compared to the micro cavity SEALED

usinee en surface du document [2] mats, dans le cas de la figure lB, les events vent bouches avec un materiau BILLET surface of the document [2] mats, in the case of Figure lB, the mouths wind events with a material

poreux. porous.

La figure 1B reprend les principales parties decrites dans la figure 1A mais sans le cordon, ou anneau, de scellement puisqu'il n'y a plus d'hybridation: dans le cas de la figure 1B, les events Figure 1B shows the main parts described in Figure 1A but without the cord or ring, sealing since there are no hybridization: In the case of Figure 1B, the vents

vent places lateralement. Wind laterally seats.

Des objets a encapsuler 2a vent dans une cavite 12a, sur un substrat 8a. Objects to be encapsulated 2a wind in a cavity 12a on a substrate 8a. La cavite est fermee par une couche 19a (correspondent a la couche structurelle du document [2]). The cavity is closed by a layer 19a (corresponding to the structural layer of the document [2]). Des events lateraux 6a vent prevus entre cette couche 19a et le substrat. 6a lateral vents wind 19a provided between this layer and the substrate. Ces events vent bouches par un materiau poreux 16a. These events wind mouths by a porous material 16a. Une couche de scellement etanche 20a recouvre ce materiau A waterproof sealing layer 20a covers this material

et la couche de fermeture de la cavite. and the sealing layer of the cavity.

L' invention permet d'obtenir, dans la cavite 12, une tres basse pression, inferieure a 104Pa, stable dans le temps, et ce avec des techniques de The invention provides, in the cavity 12, a very low pressure of less than 104Pa, stable over time, and with techniques

fabrication industrielles. industrial manufacturing.

On precise que les sorties electriques du dispositif 2 peuvent deboucher a l'exterieur de la cavite 12 si cela est necessaire, en utilisant les It is specified that the electrical outputs of the device 2 may emerge outside of the cavity 12 if necessary, using

techniques classiques de la microelectronique. Technical conventional microelectronics.

Dans un autre exemple, au lieu de faire le vice dans la cavite 12, on remplit cette derriere d'un gaz, par exemple un gaz neutre tel que l'azote ou In another example, instead of the defect in the cavity 12, filling the backside of a gas, eg an inert gas such as nitrogen or

['helium, suivant la nature du dispositif 2. [ 'Helium, depending on the nature of the device 2.

Ce remplissage se fait en mettant la structure dans une enceinte appropriee, contenant ce gaz sous pression. This filling is done by placing the structure in an appropriate enclosure containing the gas under pressure. Ce dernier remplit alors la cavite This fills the cavity

12 en traversant la couche poreuse 16. 12 passing through the porous layer 16.

Ensuite, on depose comme precedemment la couche etanche 20, ce qui permet encore d'encapsuler le dispositif sous atmosphere contr61ee (une atmosphere Is then deposited as before the waterproof layer 20, which further makes it possible to encapsulate the device in contr61ee atmosphere (an atmosphere

gazeuse dans ce cas). gas in this case).

Outre les applications deja donnees de la presente invention, precisons que cette derriere siapplique a toutes sortes de dispositifs, par exemple aux diodes, aux. In addition to the applications already data of the present invention, note that this siapplique behind all kinds of devices, such as diodes, to. dispositifs d'affichage ou aux microlasers et ce, dans divers domaines tels que: appareils de tests de mesure, optique, capteurs solaires, microscopic, metrologie, imagerie et connectique (en plus des domaines deja mentionnes plus haut). display devices or microlasers and, in various fields such as measurement testing devices, optical, solar collectors, microscopy, metrology, imaging and connection (in addition to the fields already mentioned above). I1 convient de noter que le procede objet de l' invention permet aussi bien l 'encapsulation collective que l' encapsulation individuelle de I1 should be noted that the method of the invention allows both collective encapsulation that individual encapsulation

dispositifs. devices.

On choisit le materiau de la couche poreuse en fonction des contraintes thermiques, mecaniques, chimiques ou optiques propres aux applications souhaitees. Choosing the material of the porous layer according to the thermal, mechanical, chemical or optical-specific desired applications. On choisit par exemple un materiau poreux de type "getter" ou du silicium poreux ou du germanium poreux ou un alliage Si1-x-yGexCy poreux dans le cas ou l'on utilise une technologie a base de silicium pour la One example selects a porous material of type "getter" or porous silicon or germanium porous or porous Si1-x-yGexCy alloy in the case where the technology used is based on silicon for the

fabrication du dispositif que l'on veut encapsuler. manufacture of the device you want to encapsulate.

Dans le cas d'autres technologies, par exemple des technologies a base de composes semiconducteurs III-V ou II-VI, on peut utiliser un alliage poreux comportant des elements chimiques presents dans le substrat sur lequel on forme le dispositif, afin de garantir une compatibilite chimique In the case of other technologies, such as technologies based on compound semiconductors III-V or II-VI, a porous alloy can be used including chemical elements present in the substrate on which is formed the device, to ensure chemical compatibility

maximale. Max.

I1 est possible de contr81er la taille et I1 can contr81er size and

la distribution des pores des materiaux mentionnes ci- distribution materials of the pores mentioned above

dessus par les conditions de depOt de ces materiaux. above by the conditions of deposition of these materials.

A titre d'exemple, pour encapsuler un dispositif tel qu'un microbolometre conformement a ['invention, on procede de la facon suivante: ouverture d'un event, liberation des microponts du microbolometre,dep8t d'un materiau poreux pour boucher l' evens, mise sous vice de la cavite contenant le microbolometre dans lienceinte servant au depot du materiau poreux et dep8t d'une couche standard, apte a For example, for encapsulating a device such as a microbolometer accordance [invention, one proceeds in the following way: opening a vent, release of the microbolometer microbridges, dep8t of a porous material to clog the evens, placed under vice of the cavity containing the microbolometer in lienceinte used to deposit the porous material and dep8t a standard layer capable has

encapsuler de facon etanche le materiau poreux. encapsulate the porous material sealed manner.

Si besoin est. If needed. cette sequence de base peut This base sequence can

etre completee par des etapes intermediaires. be complemented by intermediate stages.

Par exemple, il peut etre necessaire d'ajouter une etape de rebouchage partiel de l' evens afin de minimiser, pour des raisons mecaniques, For example, it may be necessary to add a step of patching part of evens to minimize, for mechanical reasons,

l'epaisseur du materiau poreux a deposer. the thickness of the porous material to be deposited.

En effet ce materiau poreux est moins solide que le materiau dense correspondent car le Indeed this porous material is less solid than the dense material because the match

nombre de liaisons atomiques y est plus faible. number of atomic bonds is lower.

On explique dans ce qui suit diverges etapes d'un exemple du procede objet de ['invention en It is explained in the following diverged steps of an example of the method of [ 'invention

faisant reference aux figures 2A a 2G. Referring to Figures 2A-2G.

On va d'abord commenter la figure 2G qui est une vue en coupe laterale schematique-et partielle We will first comment on the 2G figure is a lateral schematic and partial-section

d'un dispositif encapsule conformement a ['invention. of a device in accordance encapsulates a [invention.

Ce dispositif est par exemple un dispositif This device is for example a device

microelectronique tel qu'un microbolometre. microelectronics such as a microbolometer.

On precise que l'axe X de croissance des couches permettant d'obtenir la structure que l'on volt sur la figure 2G est oriente du teas vers le haut de X-axis layers growth is pointed out that to obtain the structure that one volt in Figure 2G is oriented the teas up

cette figure. this figure.

L'empilement des diverges couches est simplement donne a titre d'exemple. The stack of layers is simply diverged gives as an example. Il s'agit d'une coupe (vue de c6te) perpendiculaire a l'axe de croissance X. Cet empilement n'est pas necessairement This is a section (seen from C6te) perpendicular to the growth axis X. This stack is not necessarily

borne lateralement. terminal laterally.

Sur la figure 2G, les references 22, 24, 26, 28, 30, 32 et 36 representent respectivement un substrat, le dispositif, une cavite, un trou, une couche poreuse, une couche d' encapsulation etanche et 2G on the figure, references 22, 24, 26, 28, 30, 32 and 36 represent respectively a substrate, the device, a cavity, a hole, a porous layer, a layer of waterproof encapsulation and

un capot. a cap.

Le substrat 22, sur lequel les differentes couches utilisees vent deposees, est par exemple en The substrate 22 on which the various layers deposited wind used, for example in

silicium. silicon.

Le dispositif 24 (par exemple un microbolometre) est separe du capot 36 par les colonnes 34. Le trou 28 est un event permettant de faire le vice dans la cavite 26. Au lieu d'un event, il pourrait y en The device 24 (eg, a microbolometer) is separated from the cover 36 by the columns 34. The hole 28 is an event to be vice in the cavity 26. Instead of an event, there could

avoir plusieurs. have several.

Le nombre et la taille des events ou orifices vent choisis pour faire correctement le vice dans la cavite 26 tout en conservant une solidite mecanique suffisante pour le capot 36 pour permettre de reboucher ulterieurement le ou les events. The number and size of events or selected wind holes correctly to vice in the cavity 26 while retaining sufficient mechanical solidity to the cover 36 to allow the subsequently reseal or events. La couche poreuse 30 permet de ralentir les echanges gazeux entre la cavite et l'exterieur de cette cavite. The porous layer 30 can slow the gas exchange between the cavity and the outside of this cavity. La couche etanche 32 permet de stopper ces The waterproof layer 32 is used to stop these

echanges gazeux. gas exchange.

On explique maintenant les diverges etapes de fabrication de ce dispositif (microbolometre) now diverged explains the steps for manufacturing this device (microbolometer)

encapsule en faisant reference aux figures 2A a 2G. encapsulates by making reference to Figures 2A to 2G.

On commence par former le microbolometre 24 We begin by forming the microbolometer 24

sur le substrat 22 (figure 2A). on the substrate 22 (Figure 2A).

Sur le micobolometre, on forme ensuite les colonnes 34 de ce microbolometre ainsi qu'une couche de On micobolometre, then form the columns 34 of the microbolometer and a layer of

resine 38 qui entoure ces colonnes (figure 2B). resin 38 which surrounds the columns (Figure 2B).

On forme ensuite une couche 36 constituent le capot par un depSt approprie sur la couche de resine then forming a layer 36 constituting the cover by a suitable depSt on the layer of resin

38 (figure 2C). 38 (Figure 2C).

On forme ensuite le ou les events 28 a then formed the events or 28a

travers le capot 36 (figure 2D). through the hood 36 (Figure 2D).

On elimine ensuite la resine par une attaque chimique appropriee a travers les events (figure 2E). the resin is then eliminated by chemical attack through the proper events (Figure 2E). A la place de la resine, on obtient ainsi Instead of the resin, thereby obtaining

la cavite 26 dans la structure formee. the cavity 26 in the formed structure.

On depose ensuite la couche de materiau then deposited the layer of material

poreux 30 sur le capot 36 (figure 2F). 30 of porous cover 36 (Figure 2F).

On met ensuite la cavite 26 sous vice, par pompage a travers les events, puis on forme la couche d'encapsulation etanche 32 sur la couche 30 (figure 2G). Then set the cavity 26 under vice, by pumping through the vents and then form the encapsulation layer 32 on the waterproof layer 30 (Figure 2G). On precise que le dispositif 24 (par exemple un microbolometre) est depose, puis les colonnes realisees, par des techniques de depot standard. It is specified that the device 24 (e.g., a microbolometer) is deposited, then the CARRIED columns, by standard deposition techniques. Ces colonnes ont des proprietes electriques, mecaniques, thermiques et optiques appropriees a ['application souhaitee. These columns have electrical, mechanical, thermal and optical appropriate a [desired application. Wiles peuvent 8tre par exemple en nitrure de silicium ou en oxynitrure de silicium, en nitrure d'aluminium ou en Wiles can 8tre for example silicon nitride or silicon oxynitride, or aluminum nitride

nitrure de titane. titanium nitride.

Le capot est egalement depose par une methode standard. The cover is also deposited by a standard method. Il est par exemple en silicium amorphe ou en germanium poreux que lion depose par LPCVD ou PECVD. It is for example amorphous silicon or germanium that porous lion deposited by LPCVD or PECVD. D'autres materiaux peuvent etre deposes Other materials can be deposited

a la tournette ("spin coating") ou par un procede sol- spin ( "spin coating") or by a process sol

gel. gel. Les orifices ou events vent perces dans ce capot pour permettre d'evacuer la resine adjacente aux colonnes et de liberer en meme temps les microponts The orifices or vents wind pierced in said cover to allow to evacuate the resin adjacent to the columns and to release at the same time the microbridges

lorsque le dispositif est un microbolometre suspendu. when the device is suspended a microbolometer.

Dans l'etape illustree par la figure 2F le materiau poreux, par exemple du silicium nanoporeux, est depose par une methode standard, par exemple par depot a basse temperature (de 0 a 450 C), a forte In the step illustrated in Figure 2F the porous material, e.g., nanoporous silicon, is deposited by a standard method, for example by deposition at low temperature (from 0 to 450 C), a strong

dilution d'hydrogene (superieure a 51). hydrogen dilution (greater than 51).

L'utilisation diune basse temperature (typiquement 80 C) pour le depot de ce materiau poreux permet de ne pas degrader le composant que l'on veut encapsuler. Use low temperature Diune (typically 80 C) to the filing of this porous material allows not degrade the component you want to encapsulate. La taille du ou des events et l'epaisseur du materiau poreux vent choisis afin de garantir une tenue mecanique suffisante de l 'ensemble, une vitesse de diffusion appropriee pour la mise sous vice en un temps raisonnable et un maintien du vice pendant le dep8t du materiau d' encapsulation finale (etape The size or thickness of the events and the selected wind porous material to ensure sufficient mechanical outfit of all, an appropriate diffusion rate for the power vice in a reasonable time and keeping the vice during the dep8t material of final encapsulation (step

illustree par figure 2G). illustrated by Figure 2G).

On utilise un materiau poreux compatible avec la technique de fabrication utilisee et les It uses a porous material compatible with the used manufacturing technique and

performances sonhaitees pour le dispositif. sonhaitees performance for the device.

Ce materiau poreux est typiquement du silicium amorphe poreux ou du SiGe poreux ou du germanium poreux ou du Si1-x-yGexCy poreux, avec 0Sx<1 et O<y<1. This porous material is typically amorphous porous silicon or porous SiGe or germanium porous or porous Si1-x-yGexCy, with 0SX <1 and O <y <1. D'autres materiaux poreux peuvent etre utilises suivant les besoins, comme par exemple des verres poreux, des ceramiques poreuses, des polymeres Other porous materials can be used as needed, such as porous glass, porous ceramics, polymers of

poreux ou des metaux poreux. porous or porous metals.

Le materiau poreux utilise doit simplement adherer a la surface du ou des events et ne pas poser The porous material used must simply adhere to the surface of or events and do not ask

de problemes de corrosion ou de fissuration. corrosion problems or cracking.

Il doit aussi etre choisi en fonction du dispositif encapsule, par exemple etre transparent aux longueurs d'onde detectees par le dispositif si celui It should also be chosen depending on the device encapsulates, for example be transparent to the wavelengths detected by the apparatus if the

ci est un detecteur optique. is an optical detector.

Les materiaux ci-dessus permettent de faire varier la taille, la distribution et la microstructure des pores afin controler la tenue mecanique, la vitesse de diffusion des gaz, la permeabilite et les proprietes optiques (en particulier l'indice optique et The above materials enable to vary the size, distribution and pore microstructure to control the mechanical strength, the rate of diffusion of gas permeability and optical properties (in particular the refractive index and

l' absorption optique). optical absorption).

L'utilisation du materiau poreux conformement al' invention permet l' integration monolithique du boltier d' encapsulation par rapport au dispositif. The use of the porous material according al invention allows the monolithic integration of boltier encapsulation with respect to the device. Du point de vue industrial, une integration monolithique permet d'effectuer des operations collectives sans avoir besoin d'une remise a l'air ou From the industrial point of view, a monolithic integration allows collective operations without needing an extra looks or

dans une atmosphere moins propre. in a less clean atmosphere.

De plus la technique monolithique est avantageuse en termes de cout, par effet de masse. Moreover monolithic technique is advantageous in terms of cost, mass effect. I1 est plus rapide d'encapsuler tous les dispositifs dinne meme plaquette semiconductrice, en une seule etape, que de mettre les dispositifs les uns apres les autres dans des boltiers, avec des risques supplementaires de I1 is faster to encapsulate all dinne same semiconductor wafer devices, in a single step, as to the devices one after the other in boltiers with additional risk

casser ces dispositifs lors de leur manutention. these devices break during handling.

On precise que pour obtenir Sil-x-yGexcy a l'etat poreux, eventuellement dope avec de l'oxygene, du bore ou de l'azote, en fonction des besoins, on peut proceder a une oxydation anodique d'une couche non It is specified that for Sil-x-yGexcy a porous state, optionally doped with oxygen, boron, or nitrogen, as required, one can proceed to an anodic oxidation of a layer not

poreuse de ce materiau. this porous material.

Pour ce faire, on injecte un fort courant electrique dans la couche qui est en contact avec un To do this, were injected a strong electric current in the layer which is in contact with a

bain acide typiquement a basse dacide fluorhydrique. bath typically has low dacide hydrofluoric acid.

Cette methode peut etre mise en muvre en faisant flotter le dispositif tete en teas sur le bain, afin d'eviter de remplir la cavite au cas ou la pression du This method can be carried muvre by floating the device head in teas on the bath, in order to avoid clogging up the cavity in case the pressure of the

liquide casserait la couche poreuse. liquid break the porous layer.

De preference, on fabrique le materiau poreux en choissant des parametres appropries lors du Preferably, the porous material is manufactured in choissant the appropriate parameters when

dep8t de la couche faite de ce materiau. dep8t of the layer made of this material.

Les pores ont typiquement une taille superieure a quelques nanometres, ce qui permet de The pores typically have an upper size a few nanometers, which allows

laisser passer quasiment tous les atomes. pass almost all atoms.

Le reglage de la connexite des pores permet de controler la diffusivite de la couche poreuse. The adjustment of the pore connectedness allows to control the diffusivity of the porous layer. De basses temperatures de depSt (typiquement 100 C) et de fortes concentrations d'hydrogene dans la phase gazeuse permettent Low temperature of depSt (typically 100 C) and high concentrations of hydrogen in the gaseous phase allow

generalement d'obtenir un materiau amorphe poreux. generally to obtain a porous amorphous material.

Des traitements apres depSt (par exemple avec un plasma d'hydrogene) permettent d'obtenir une couche de silicium amorphe poreux (de l'ordre de 20nm Treatment after depSt (e.g. with a plasma of hydrogen) allow to obtain a layer of porous amorphous silicon (of the order of 20nm

d'epaisseur dans le cas du plasma). thick in the case of plasma).

Claims (9)

  1. REVENDICATIONS
    l.Procede d' encapsulation d'au moins un objet (2) sous atmosphere controlee, procede dans lequel -on place cet objet dans une cavite (12), cette cavite etant pourvue d'au moins un event (6) prevu pour mettre l'interieur de la cavite en contact avec l'exterieur de celle-ci, -on met cette cavite sous une atmosphere controlee et -on ferme l' evens de fac, on etanche, ce procede etant caracterise en ce que l'on obture l' evens par une couche intermediaire (16) en materiau poreux avant de fermer lievent de fa,con etanche. l.A method of encapsulation of at least one object (2) under controlled atmosphere, in which method instead -on this object in a cavity (12), this cavity being provided with at least a vent (6) provided for putting the interior of the cavity in contact with the outside thereof, -on puts this cavity under a controlled atmosphere and -on closes the varsity evens it waterproof, such process being characterized in that said one closes the evens by an intermediate layer (16) of porous material before closing lievent of fa, con sealed.
  2. 2.Procede selon la revendication 1, dans lequel on ferme lievent par une couche d' encapsulation etanche (20) que l'on forme sur la couche intermediaire (16) en 2.The method of claim 1, wherein lievent is closed by a layer of watertight encapsulation (20) which is formed on the intermediate layer (16)
    materiau poreux. porous material.
  3. 3.Procede selon l'une quelconque des 3.A method according to any one of
    revendications 1 et 2, dans lequel Claims 1 and 2, wherein
    -on forme un dispositif (2) ainsi qu'une structure d' encapsulation de ce dispositif, ce dernier constituent ['objet a encapsuler, -on forme, autour du dispositif, la cavite (12) pourvue de l' evens (6), -on met cette cavite sous l' atmosphere controlee et -on ferme l' evens de fa,con etanche, et dans lequel on obture l' evens par la couche intermediaire (16) en materiau poreux avant de fermer -on-shaped means (2) and a structure for encapsulating the device, the latter is [subject to be encapsulated, -on form, around the device, the cavity (12) provided with the evens (6) , -on puts this cavity under the controlled atmosphere and -on closes the evens of fa, con waterproof, and wherein closes the evens by the intermediate layer (16) of porous material before closing
    l' evens de fa,con etanche. the evens of fa con waterproof.
  4. 4.Procede selon la revendication 3, dans lequel le dispositif (2) que lion forme et que l'on encapsule 4.The method of claim 3, wherein the device (2) lion shape and that is encapsulated
    est un microcomposant. is a micro component.
  5. 5.Procede selon la revendication 3, dans lequel le dispositif (2) que l'on forme et que l'on encapsule 5.The method of claim 3, wherein the device (2) which is formed and the encapsulating
    est un ensemble de microcomposants. is a set of microcomponents.
  6. 6.Procede selon liune quelconque des 6.The method of any liune
    revendications 3 a 5, dans lequel le dispositif a Claims 3 to 5, wherein the device has
    encapsuler est forme sur un substrat en silicium et le materiau poreux est choisi parmi le silicium poreux, le germanium poreux et les alliages Si1-x-yGexCyporeux' avec O<x<l,O<y<l,O<x+y<1. encapsulated is formed on a silicon substrate and the porous material is selected from porous silicon, porous germanium and Si1-x-yGexCyporeux alloys' with O <x ​​<l, O <y <l, O <x ​​+ y < 1.
  7. 7.Procede selon l'une quelconque des 7.A process according to any one of
    revendications 3 a 5, dans lequel le dispositif a Claims 3 to 5, wherein the device has
    encapsuler est forme sur un substrat et le materiau poreux est un alliage poreux comportant des elements encapsulated is formed on a substrate and the porous material is a porous alloy comprising elements
    chimiques qui vent presents dans ce substrat. which wind chemical present in the substrate.
  8. 8.Procede selon l'une quelconque des 8.The method of any one of
    revendications 1 a 7, dans lequel l' atmosphere claims 1 to 7, wherein the atmosphere
    contr81ee est le vice, on place la cavite (12) pourvue de la couche intermediaire (16) en materiau poreux dans une enceinte a vice (18) et l'on fait le vice dans la cavite, a travers cette couche intermediaire, avant de contr81ee is vice, placing the cavity (12) provided with the intermediate layer (16) of porous material in an enclosure a vice (18) and one makes the defect in the cavity through this intermediate layer, before
    fermer l' evens (6) de facon etanche. close the evens (6) so sealed.
  9. 9.Procede selon la revendication 8, dans lequel le materiau poreux est un materiau poreux de type getter. 9.The method of claim 8, wherein the porous material is a porous getter material type. lO.Procede selon l'une quelconque des lO.Procede according to any one of
    revendications 1 a 7, dans lequel l' atmosphere claims 1 to 7, wherein the atmosphere
    contr81ee est un gaz, on place la cavite pourvue de la couche intermediaire en materiau poreux dans une enceinte contenant ce gaz et l'on remplit la cavite de ce gaz, a Cravers cette couche intermediaire, avant de contr81ee is a gas, the cavity is instead provided with the intermediate layer of porous material in a chamber containing the gas and filling the cavity of this gas, has Cravers this intermediate layer, before
    fermer l' evens de facon etanche. close the evens of waterproof way.
FR0207853A 2002-06-25 2002-06-25 Encapsulation of an object under a controlled atmosphere in a cavity provided with a vent that is stopped with a porous material prior to final sealing Pending FR2841380A1 (en)

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EP1640330A2 (en) * 2004-09-27 2006-03-29 Idc, Llc Method and device for packaging a substrate
EP1640327A3 (en) * 2004-09-27 2007-12-05 Idc, Llc Method and system for packaging mems devices with incorporated getter
US7668415B2 (en) 2004-09-27 2010-02-23 Qualcomm Mems Technologies, Inc. Method and device for providing electronic circuitry on a backplate
US7701631B2 (en) 2004-09-27 2010-04-20 Qualcomm Mems Technologies, Inc. Device having patterned spacers for backplates and method of making the same
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US8004736B2 (en) 2003-08-18 2011-08-23 Qualcomm Mems Technologies, Inc. Optical interference display panel and manufacturing method thereof
US8124434B2 (en) 2004-09-27 2012-02-28 Qualcomm Mems Technologies, Inc. Method and system for packaging a display
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US7668415B2 (en) 2004-09-27 2010-02-23 Qualcomm Mems Technologies, Inc. Method and device for providing electronic circuitry on a backplate
US7701631B2 (en) 2004-09-27 2010-04-20 Qualcomm Mems Technologies, Inc. Device having patterned spacers for backplates and method of making the same
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US7935555B2 (en) 2004-09-27 2011-05-03 Qualcomm Mems Technologies, Inc. Method and system for sealing a substrate
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US8115983B2 (en) 2004-09-27 2012-02-14 Qualcomm Mems Technologies, Inc. Method and system for packaging a MEMS device
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US7715080B2 (en) 2006-04-13 2010-05-11 Qualcomm Mems Technologies, Inc. Packaging a MEMS device using a frame
US7746537B2 (en) 2006-04-13 2010-06-29 Qualcomm Mems Technologies, Inc. MEMS devices and processes for packaging such devices
US8379392B2 (en) 2009-10-23 2013-02-19 Qualcomm Mems Technologies, Inc. Light-based sealing and device packaging
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US8999762B2 (en) 2011-10-11 2015-04-07 Commissariat à l'énergie atomique et aux énergies alternatives Process for encapsulating a micro-device by attaching a cap and depositing getter through the cap
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EP2803634A1 (en) * 2013-05-15 2014-11-19 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Method for encapsulating a microelectronic device with the injection of a noble gas through a material permeable to this noble gas
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