FR2830122B1 - Procede d'amincissement d'une plaquette de silicium - Google Patents

Procede d'amincissement d'une plaquette de silicium

Info

Publication number
FR2830122B1
FR2830122B1 FR0112439A FR0112439A FR2830122B1 FR 2830122 B1 FR2830122 B1 FR 2830122B1 FR 0112439 A FR0112439 A FR 0112439A FR 0112439 A FR0112439 A FR 0112439A FR 2830122 B1 FR2830122 B1 FR 2830122B1
Authority
FR
France
Prior art keywords
slicing
etching
integrated circuit
relates
silicon platelet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0112439A
Other languages
English (en)
Other versions
FR2830122A1 (fr
Inventor
Christian Corriol
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0112439A priority Critical patent/FR2830122B1/fr
Priority to PCT/FR2002/003257 priority patent/WO2003028077A1/fr
Publication of FR2830122A1 publication Critical patent/FR2830122A1/fr
Application granted granted Critical
Publication of FR2830122B1 publication Critical patent/FR2830122B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/782—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element
    • H01L21/784—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, each consisting of a single circuit element the substrate being a semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)

Abstract

L'invention se rapporte à un procédé pour amincir une plaquette de silicium par gravure de sa face arrière.Le procédé consiste à réaliser une première gravure partielle, par polissage mécanique, suivie d'une gravure chimique dans une ou plusieurs solutions, de préférence de potasse.L'invention porte également sur un circuit intégré formé sur une plaquette amincie selon le procédé, ainsi que sur des cartes à puce comprenant un tel circuit intégré.
FR0112439A 2001-09-27 2001-09-27 Procede d'amincissement d'une plaquette de silicium Expired - Fee Related FR2830122B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0112439A FR2830122B1 (fr) 2001-09-27 2001-09-27 Procede d'amincissement d'une plaquette de silicium
PCT/FR2002/003257 WO2003028077A1 (fr) 2001-09-27 2002-09-24 Procede d'amincissement d'une plaquette de silicium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0112439A FR2830122B1 (fr) 2001-09-27 2001-09-27 Procede d'amincissement d'une plaquette de silicium

Publications (2)

Publication Number Publication Date
FR2830122A1 FR2830122A1 (fr) 2003-03-28
FR2830122B1 true FR2830122B1 (fr) 2006-01-21

Family

ID=8867665

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0112439A Expired - Fee Related FR2830122B1 (fr) 2001-09-27 2001-09-27 Procede d'amincissement d'une plaquette de silicium

Country Status (2)

Country Link
FR (1) FR2830122B1 (fr)
WO (1) WO2003028077A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111066125A (zh) 2017-08-30 2020-04-24 德克萨斯仪器股份有限公司 蚀刻并机械研磨堆叠在半导体衬底上的膜层

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909325A (en) * 1974-06-28 1975-09-30 Motorola Inc Polycrystalline etch
US4137123A (en) * 1975-12-31 1979-01-30 Motorola, Inc. Texture etching of silicon: method
DE4411409C2 (de) * 1994-03-31 1998-05-14 Siemens Ag Verfahren zum Rückseiten-Dünnen von strukturierten Silizium-Wafern
US5855735A (en) * 1995-10-03 1999-01-05 Kobe Precision, Inc. Process for recovering substrates
US6350664B1 (en) * 1999-09-02 2002-02-26 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
WO2003028077A1 (fr) 2003-04-03
FR2830122A1 (fr) 2003-03-28

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20080531