FR2819631B1 - Procede de fabrication d'un substrat monocristallin, et circuit integre comportant un tel substrat - Google Patents

Procede de fabrication d'un substrat monocristallin, et circuit integre comportant un tel substrat

Info

Publication number
FR2819631B1
FR2819631B1 FR0100414A FR0100414A FR2819631B1 FR 2819631 B1 FR2819631 B1 FR 2819631B1 FR 0100414 A FR0100414 A FR 0100414A FR 0100414 A FR0100414 A FR 0100414A FR 2819631 B1 FR2819631 B1 FR 2819631B1
Authority
FR
France
Prior art keywords
substrate
manufacturing
integrated circuit
single crystal
crystal substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0100414A
Other languages
English (en)
French (fr)
Other versions
FR2819631A1 (fr
Inventor
Olivier Menut
Yvon Gris
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0100414A priority Critical patent/FR2819631B1/fr
Priority to JP2001394184A priority patent/JP2002270509A/ja
Priority to EP02290038A priority patent/EP1223614B1/fr
Priority to DE60216646T priority patent/DE60216646T2/de
Priority to US10/044,402 priority patent/US7060596B2/en
Publication of FR2819631A1 publication Critical patent/FR2819631A1/fr
Application granted granted Critical
Publication of FR2819631B1 publication Critical patent/FR2819631B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H10W10/0147—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape the shapes being altered by a local oxidation of silicon process, e.g. trench corner rounding by LOCOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3248—Layer structure consisting of two layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
FR0100414A 2001-01-12 2001-01-12 Procede de fabrication d'un substrat monocristallin, et circuit integre comportant un tel substrat Expired - Fee Related FR2819631B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0100414A FR2819631B1 (fr) 2001-01-12 2001-01-12 Procede de fabrication d'un substrat monocristallin, et circuit integre comportant un tel substrat
JP2001394184A JP2002270509A (ja) 2001-01-12 2001-12-26 単結晶基板の製作方法およびその基板を含む集積回路
EP02290038A EP1223614B1 (fr) 2001-01-12 2002-01-09 Procédé de fabrication d'un substrat monocristallin, et circuit intégré comportant un tel substrat
DE60216646T DE60216646T2 (de) 2001-01-12 2002-01-09 Verfahren zur Herstellung eines monokristallinen Substrats und integrierter Schaltkreis mit einem solchen Substrat
US10/044,402 US7060596B2 (en) 2001-01-12 2002-01-11 Process for fabricating a single-crystal substrate and integrated circuit comprising such a substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0100414A FR2819631B1 (fr) 2001-01-12 2001-01-12 Procede de fabrication d'un substrat monocristallin, et circuit integre comportant un tel substrat

Publications (2)

Publication Number Publication Date
FR2819631A1 FR2819631A1 (fr) 2002-07-19
FR2819631B1 true FR2819631B1 (fr) 2003-04-04

Family

ID=8858764

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0100414A Expired - Fee Related FR2819631B1 (fr) 2001-01-12 2001-01-12 Procede de fabrication d'un substrat monocristallin, et circuit integre comportant un tel substrat

Country Status (5)

Country Link
US (1) US7060596B2 (https=)
EP (1) EP1223614B1 (https=)
JP (1) JP2002270509A (https=)
DE (1) DE60216646T2 (https=)
FR (1) FR2819631B1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2819632B1 (fr) * 2001-01-12 2003-09-26 St Microelectronics Sa Circuit integre comportant un dispositif analogique de stockage de charges, et procede de fabrication
US6784072B2 (en) * 2002-07-22 2004-08-31 International Business Machines Corporation Control of buried oxide in SIMOX
FR3099964B1 (fr) * 2019-08-14 2024-03-29 St Microelectronics Crolles 2 Sas Procédé de réalisation d’une électrode dans un substrat de base et dispositif électronique
CN112768509B (zh) * 2021-02-03 2022-07-08 杭州中瑞宏芯半导体有限公司 一种反向恢复时间短的frd二极管及制备方法
CN117568912B (zh) * 2023-11-21 2024-10-01 松山湖材料实验室 一种单晶复合衬底及其制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6292365A (ja) * 1985-10-18 1987-04-27 Fuji Photo Film Co Ltd 半導体装置およびその製造方法
US4649625A (en) * 1985-10-21 1987-03-17 International Business Machines Corporation Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor
JPS62293759A (ja) * 1986-06-13 1987-12-21 Matsushita Electric Ind Co Ltd 半導体装置
US4942554A (en) * 1987-11-26 1990-07-17 Siemens Aktiengesellschaft Three-dimensional, one-transistor cell arrangement for dynamic semiconductor memories comprising trench capacitor and method for manufacturing same
KR100197648B1 (ko) * 1995-08-26 1999-06-15 김영환 반도체소자의 소자분리 절연막 형성방법
FR2756104B1 (fr) 1996-11-19 1999-01-29 Sgs Thomson Microelectronics Fabrication de circuits integres bipolaires/cmos
JP3502531B2 (ja) * 1997-08-28 2004-03-02 株式会社ルネサステクノロジ 半導体装置の製造方法
US5891763A (en) * 1997-10-22 1999-04-06 Wanlass; Frank M. Damascene pattering of SOI MOS transistors
US6001706A (en) * 1997-12-08 1999-12-14 Chartered Semiconductor Manufacturing, Ltd. Method for making improved shallow trench isolation for semiconductor integrated circuits
US6074954A (en) * 1998-08-31 2000-06-13 Applied Materials, Inc Process for control of the shape of the etch front in the etching of polysilicon
US6214653B1 (en) * 1999-06-04 2001-04-10 International Business Machines Corporation Method for fabricating complementary metal oxide semiconductor (CMOS) devices on a mixed bulk and silicon-on-insulator (SOI) substrate
FR2819636B1 (fr) * 2001-01-12 2003-09-26 St Microelectronics Sa Circuit integre comportant un point memoire de type dram, et procede de fabrication

Also Published As

Publication number Publication date
JP2002270509A (ja) 2002-09-20
DE60216646D1 (de) 2007-01-25
US7060596B2 (en) 2006-06-13
EP1223614A1 (fr) 2002-07-17
US20020094678A1 (en) 2002-07-18
DE60216646T2 (de) 2007-10-11
EP1223614B1 (fr) 2006-12-13
FR2819631A1 (fr) 2002-07-19

Similar Documents

Publication Publication Date Title
FR2809867B1 (fr) Substrat fragilise et procede de fabrication d'un tel substrat
EP1363325A4 (en) MEMBER FOR ELECTRONIC CIRCUIT, METHOD FOR THE PRODUCTION THEREOF AND ELECTRONIC PART
FR2807612B1 (fr) Substrat en ceramique monolithique, son procede de conception et de fabrication et dispositif electronique l'utilisant
EP1120818A4 (en) SEMICONDUCTOR SUBSTRATE AND ITS MANUFACTURE, SEMICONDUCTOR ASSEMBLY ON THIS SUBSTRATE AND ITS MANUFACTURE
EP1199588A4 (en) OPTOELECTRONIC SUBSTRATE, CIRCUIT BOARD, AND METHOD FOR PRODUCING OPTOELECTRONIC SUBSTRATE
FR2796757B1 (fr) Procede de fabrication de substrat soi et dispositif a semiconducteur
FR2788629B1 (fr) Transistor mis et procede de fabrication d'un tel transistor sur un substrat semiconducteur
FR2825834B1 (fr) Procede de fabrication d'un disositif a semi-conducteur
EP1119015A4 (en) METHOD FOR PRODUCING A PLASMA DISPLAY AND STRUCTURE OF A SUBSTRATE
EP1372364A4 (en) METHOD FOR PRODUCING A CIRCUIT BUILDING SUBSTRATE
FR2837980B1 (fr) Dispositif a semi-conducteur et son procede de fabrication, substrat de type soi pour ce dispositif et son procede de fabrication, et dispositif d'affichage utilisant un tel substrat
EP0676796A3 (en) Semiconductor substrate and manufacturing method.
EP1311002A4 (en) SEMICONDUCTOR LIGHT EMISSION ELEMENT AND METHOD FOR THE PRODUCTION THEREOF
FR2827708B1 (fr) Dispositif a semi-conducteur sur substrat soi et procede de fabrication
EP1388597A4 (en) METHOD FOR PRODUCING ZnTe CONNECTOR SEMICONDUCTOR CRYSTAL, ZNTE CONNECTOR SEMICONDUCTOR CRYSTAL AND SEMICONDUCTOR DEVICE
KR20010012977A (ko) 반도체 장치 및 그 제조방법, 회로기판 및 전자기기
FR2767603B1 (fr) Procede de fabrication d'un dispositif a semiconducteur sur un substrat semiconducteur
EP1294028A4 (en) LIGHT-EMITTING SEMICONDUCTOR COMPONENT, METHOD FOR PRODUCING A LIGHT-EMITTING SEMICONDUCTOR COMPONENT AND ELECTRODE LAYER CONNECTION STRUCTURE
EP1310988A4 (en) SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF
EP1261040A4 (en) SEMICONDUCTOR ARRANGEMENT AND ITS MANUFACTURING METHOD
FR2805331B1 (fr) Element multicanal et procede de fabrication d'un tel element
FR2780550B1 (fr) Panneau d'affichage a plasma, structure de substrat d'un tel panneau, et son procede de fabrication
EP1235258A4 (en) METHOD OF CLEANING A SUBSTRATE AND MANUFACTURING METHOD FOR A SEMICONDUCTOR ARRANGEMENT
FR2807873B1 (fr) Procede de fabrication d'un dispositif a semiconducteur utilisant un substrat soi
FR2797999B1 (fr) Procede de fabrication d'une capacite integree sur un substrat de silicium

Legal Events

Date Code Title Description
ST Notification of lapse