FR2805185B1 - Procede de nettoyage a passivation exempt d'oxygene dans un reacteur plasma a couplage inductif - Google Patents

Procede de nettoyage a passivation exempt d'oxygene dans un reacteur plasma a couplage inductif

Info

Publication number
FR2805185B1
FR2805185B1 FR0002193A FR0002193A FR2805185B1 FR 2805185 B1 FR2805185 B1 FR 2805185B1 FR 0002193 A FR0002193 A FR 0002193A FR 0002193 A FR0002193 A FR 0002193A FR 2805185 B1 FR2805185 B1 FR 2805185B1
Authority
FR
France
Prior art keywords
oxygen
cleaning process
inductively coupled
coupled plasma
plasma reactor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0002193A
Other languages
English (en)
Other versions
FR2805185A1 (fr
Inventor
Jean Francois Christaud
Wolfgang Helle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0002193A priority Critical patent/FR2805185B1/fr
Publication of FR2805185A1 publication Critical patent/FR2805185A1/fr
Application granted granted Critical
Publication of FR2805185B1 publication Critical patent/FR2805185B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
FR0002193A 2000-02-22 2000-02-22 Procede de nettoyage a passivation exempt d'oxygene dans un reacteur plasma a couplage inductif Expired - Fee Related FR2805185B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR0002193A FR2805185B1 (fr) 2000-02-22 2000-02-22 Procede de nettoyage a passivation exempt d'oxygene dans un reacteur plasma a couplage inductif

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0002193A FR2805185B1 (fr) 2000-02-22 2000-02-22 Procede de nettoyage a passivation exempt d'oxygene dans un reacteur plasma a couplage inductif

Publications (2)

Publication Number Publication Date
FR2805185A1 FR2805185A1 (fr) 2001-08-24
FR2805185B1 true FR2805185B1 (fr) 2002-09-20

Family

ID=8847255

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0002193A Expired - Fee Related FR2805185B1 (fr) 2000-02-22 2000-02-22 Procede de nettoyage a passivation exempt d'oxygene dans un reacteur plasma a couplage inductif

Country Status (1)

Country Link
FR (1) FR2805185B1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991010341A1 (fr) * 1990-01-04 1991-07-11 Savas Stephen E Reacteur a plasma hf inductif a basse frequence
DE4228551C2 (de) * 1992-08-27 1996-02-22 Linde Ag Verfahren und Anwendung des Verfahrens zur reinigenden Behandlung von Oberflächen mit einem Niederdruckplasma
FR2756663B1 (fr) * 1996-12-04 1999-02-26 Berenguer Marc Procede de traitement d'un substrat semi-conducteur comprenant une etape de traitement de surface
DE19702124A1 (de) * 1997-01-22 1998-07-23 Linde Ag Verfahren und Vorrichtung zum Reinigen, Aktivieren Benetzen und/oder Beschichten der Oberflächen von Werkstücken

Also Published As

Publication number Publication date
FR2805185A1 (fr) 2001-08-24

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20091030