FR2797715B1 - Procede de gravure plasma d'une couche de polysilicium au traver d'une couche de si02 gravee - Google Patents

Procede de gravure plasma d'une couche de polysilicium au traver d'une couche de si02 gravee

Info

Publication number
FR2797715B1
FR2797715B1 FR0006683A FR0006683A FR2797715B1 FR 2797715 B1 FR2797715 B1 FR 2797715B1 FR 0006683 A FR0006683 A FR 0006683A FR 0006683 A FR0006683 A FR 0006683A FR 2797715 B1 FR2797715 B1 FR 2797715B1
Authority
FR
France
Prior art keywords
layer
severe
plasma etching
polysilicon layer
polysilicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0006683A
Other languages
English (en)
Other versions
FR2797715A1 (fr
Inventor
Pascal Costaganna
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2797715A1 publication Critical patent/FR2797715A1/fr
Application granted granted Critical
Publication of FR2797715B1 publication Critical patent/FR2797715B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
FR0006683A 1999-07-13 2000-05-25 Procede de gravure plasma d'une couche de polysilicium au traver d'une couche de si02 gravee Expired - Fee Related FR2797715B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP99480061 1999-07-13

Publications (2)

Publication Number Publication Date
FR2797715A1 FR2797715A1 (fr) 2001-02-23
FR2797715B1 true FR2797715B1 (fr) 2006-08-25

Family

ID=8242451

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0006683A Expired - Fee Related FR2797715B1 (fr) 1999-07-13 2000-05-25 Procede de gravure plasma d'une couche de polysilicium au traver d'une couche de si02 gravee

Country Status (3)

Country Link
JP (1) JP3358179B2 (fr)
FR (1) FR2797715B1 (fr)
TW (1) TW478064B (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8202783B2 (en) * 2009-09-29 2012-06-19 International Business Machines Corporation Patternable low-k dielectric interconnect structure with a graded cap layer and method of fabrication

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5835221A (en) * 1995-10-16 1998-11-10 Lucent Technologies Inc. Process for fabricating a device using polarized light to determine film thickness
US6379575B1 (en) * 1997-10-21 2002-04-30 Applied Materials, Inc. Treatment of etching chambers using activated cleaning gas
US6136211A (en) * 1997-11-12 2000-10-24 Applied Materials, Inc. Self-cleaning etch process

Also Published As

Publication number Publication date
FR2797715A1 (fr) 2001-02-23
JP2001044182A (ja) 2001-02-16
TW478064B (en) 2002-03-01
JP3358179B2 (ja) 2002-12-16

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20130131