FR2795822B1 - Dispositif de determination quantitative du cuivre dans le silicium par drainage ionique transitoire (dit) et procede utilisant cette technique - Google Patents

Dispositif de determination quantitative du cuivre dans le silicium par drainage ionique transitoire (dit) et procede utilisant cette technique

Info

Publication number
FR2795822B1
FR2795822B1 FR9908522A FR9908522A FR2795822B1 FR 2795822 B1 FR2795822 B1 FR 2795822B1 FR 9908522 A FR9908522 A FR 9908522A FR 9908522 A FR9908522 A FR 9908522A FR 2795822 B1 FR2795822 B1 FR 2795822B1
Authority
FR
France
Prior art keywords
dit
copper
silicon
same
quantitative determination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9908522A
Other languages
English (en)
Other versions
FR2795822A1 (fr
Inventor
Thomas Heiser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Original Assignee
Centre National de la Recherche Scientifique CNRS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR9908522A priority Critical patent/FR2795822B1/fr
Priority to PCT/FR2000/001837 priority patent/WO2001003177A1/fr
Priority to US09/763,792 priority patent/US6504377B1/en
Priority to JP2001508491A priority patent/JP2003504597A/ja
Priority to EP00949586A priority patent/EP1114452A1/fr
Priority to DE1114452T priority patent/DE1114452T1/de
Publication of FR2795822A1 publication Critical patent/FR2795822A1/fr
Application granted granted Critical
Publication of FR2795822B1 publication Critical patent/FR2795822B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
FR9908522A 1999-06-30 1999-06-30 Dispositif de determination quantitative du cuivre dans le silicium par drainage ionique transitoire (dit) et procede utilisant cette technique Expired - Fee Related FR2795822B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR9908522A FR2795822B1 (fr) 1999-06-30 1999-06-30 Dispositif de determination quantitative du cuivre dans le silicium par drainage ionique transitoire (dit) et procede utilisant cette technique
PCT/FR2000/001837 WO2001003177A1 (fr) 1999-06-30 2000-06-29 Dispositif de determination quantitative du cuivre dans le silicium par drainage ionique transitoire (dit) et procede utilisant cette technique
US09/763,792 US6504377B1 (en) 1999-06-30 2000-06-29 Device for quantitative detection of copper in silicon by transient ionic drift and method using same
JP2001508491A JP2003504597A (ja) 1999-06-30 2000-06-29 過渡的イオンドリフト（ｄｉｔ）によるシリコン内の銅量決定装置及びその技術を使用する方法
EP00949586A EP1114452A1 (fr) 1999-06-30 2000-06-29 Dispositif de determination quantitative du cuivre dans le silicium par drainage ionique transitoire (dit) et procede utilisant cette technique
DE1114452T DE1114452T1 (de) 1999-06-30 2000-06-29 Apparat zur bestimmung des kupfergehaltes in silizium durch transistor-ionendrainage und ein zugehöriges verfahren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9908522A FR2795822B1 (fr) 1999-06-30 1999-06-30 Dispositif de determination quantitative du cuivre dans le silicium par drainage ionique transitoire (dit) et procede utilisant cette technique

Publications (2)

Publication Number Publication Date
FR2795822A1 FR2795822A1 (fr) 2001-01-05
FR2795822B1 true FR2795822B1 (fr) 2001-09-14

Family

ID=9547618

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9908522A Expired - Fee Related FR2795822B1 (fr) 1999-06-30 1999-06-30 Dispositif de determination quantitative du cuivre dans le silicium par drainage ionique transitoire (dit) et procede utilisant cette technique

Country Status (6)

Country Link
US (1) US6504377B1 (fr)
EP (1) EP1114452A1 (fr)
JP (1) JP2003504597A (fr)
DE (1) DE1114452T1 (fr)
FR (1) FR2795822B1 (fr)
WO (1) WO2001003177A1 (fr)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4371587A (en) * 1979-12-17 1983-02-01 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition
US4474829A (en) * 1981-11-23 1984-10-02 Hughes Aircraft Company Low-temperature charge-free process for forming native oxide layers
JPH07297246A (ja) * 1994-04-27 1995-11-10 Hitachi Ltd シリコン半導体の金属汚染モニタ方法
US6095084A (en) * 1996-02-02 2000-08-01 Applied Materials, Inc. High density plasma process chamber
US5943552A (en) * 1997-02-06 1999-08-24 Seh America, Inc. Schottky metal detection method

Also Published As

Publication number Publication date
WO2001003177A1 (fr) 2001-01-11
EP1114452A1 (fr) 2001-07-11
DE1114452T1 (de) 2002-04-04
US6504377B1 (en) 2003-01-07
JP2003504597A (ja) 2003-02-04
FR2795822A1 (fr) 2001-01-05

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20080229