FR2786657B1 - ELECTRONIC POWER COMPONENT HAVING COOLING MEANS AND METHOD FOR MANUFACTURING SUCH A COMPONENT - Google Patents

ELECTRONIC POWER COMPONENT HAVING COOLING MEANS AND METHOD FOR MANUFACTURING SUCH A COMPONENT

Info

Publication number
FR2786657B1
FR2786657B1 FR9815156A FR9815156A FR2786657B1 FR 2786657 B1 FR2786657 B1 FR 2786657B1 FR 9815156 A FR9815156 A FR 9815156A FR 9815156 A FR9815156 A FR 9815156A FR 2786657 B1 FR2786657 B1 FR 2786657B1
Authority
FR
France
Prior art keywords
component
manufacturing
cooling means
electronic power
power component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9815156A
Other languages
French (fr)
Other versions
FR2786657A1 (en
Inventor
Guyennet Michel Mermet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Technology GmbH
Original Assignee
Alstom Technology AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alstom Technology AG filed Critical Alstom Technology AG
Priority to FR9815156A priority Critical patent/FR2786657B1/en
Publication of FR2786657A1 publication Critical patent/FR2786657A1/en
Application granted granted Critical
Publication of FR2786657B1 publication Critical patent/FR2786657B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5385—Assembly of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05575—Plural external layers
    • H01L2224/0558—Plural external layers being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
FR9815156A 1998-11-27 1998-11-27 ELECTRONIC POWER COMPONENT HAVING COOLING MEANS AND METHOD FOR MANUFACTURING SUCH A COMPONENT Expired - Fee Related FR2786657B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9815156A FR2786657B1 (en) 1998-11-27 1998-11-27 ELECTRONIC POWER COMPONENT HAVING COOLING MEANS AND METHOD FOR MANUFACTURING SUCH A COMPONENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9815156A FR2786657B1 (en) 1998-11-27 1998-11-27 ELECTRONIC POWER COMPONENT HAVING COOLING MEANS AND METHOD FOR MANUFACTURING SUCH A COMPONENT

Publications (2)

Publication Number Publication Date
FR2786657A1 FR2786657A1 (en) 2000-06-02
FR2786657B1 true FR2786657B1 (en) 2001-06-01

Family

ID=9533442

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9815156A Expired - Fee Related FR2786657B1 (en) 1998-11-27 1998-11-27 ELECTRONIC POWER COMPONENT HAVING COOLING MEANS AND METHOD FOR MANUFACTURING SUCH A COMPONENT

Country Status (1)

Country Link
FR (1) FR2786657B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108028242A (en) * 2015-09-30 2018-05-11 敏捷电源开关三维集成Apsi3D The method of semiconductor power device and manufacture semiconductor power device including additional traces

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2814907A1 (en) * 2000-10-03 2002-04-05 Alstom Electronic power module for branch of waveform generator, comprising transistor-diode pairs connected in series, for use in electric power distribution circuits in railway traction
DE10062108B4 (en) * 2000-12-13 2010-04-15 Infineon Technologies Ag Power module with improved transient thermal resistance
JP3673776B2 (en) * 2002-07-03 2005-07-20 株式会社日立製作所 Semiconductor module and power conversion device
JP3780230B2 (en) 2002-07-03 2006-05-31 株式会社日立製作所 Semiconductor module and power conversion device
DE10231091A1 (en) 2002-07-10 2004-01-22 Robert Bosch Gmbh Active rectifier module for three-phase generators of vehicles
US7557434B2 (en) 2006-08-29 2009-07-07 Denso Corporation Power electronic package having two substrates with multiple electronic components
US7999369B2 (en) 2006-08-29 2011-08-16 Denso Corporation Power electronic package having two substrates with multiple semiconductor chips and electronic components
GB2444293B (en) * 2006-08-30 2011-03-30 Denso Corp Power electronic package having two substrates with multiple electronic components
GB2444978B (en) * 2006-08-30 2012-03-14 Denso Corp Power electronic package having two substrates with multiple semiconductor chips and electronic components
US7973387B2 (en) 2007-06-08 2011-07-05 Continental Automotive Systems Us, Inc. Insulated gate bipolar transistor
ITUB20153344A1 (en) * 2015-09-02 2017-03-02 St Microelectronics Srl ELECTRONIC POWER MODULE WITH IMPROVED THERMAL DISSIPATION AND ITS MANUFACTURING METHOD
IT201900013743A1 (en) * 2019-08-01 2021-02-01 St Microelectronics Srl ENCAPSULATED ELECTRONIC POWER DEVICE, IN PARTICULAR BRIDGE CIRCUIT INCLUDING POWER TRANSISTORS, AND RELATED ASSEMBLY PROCEDURE
EP4002454A1 (en) * 2020-11-23 2022-05-25 Hitachi Energy Switzerland AG Electrical contact arrangement, power semiconductor module, method for manufacturing an electrical contact arrangement and method for manufacturing a power semiconductor module

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4218694A (en) * 1978-10-23 1980-08-19 Ford Motor Company Rectifying apparatus including six semiconductor diodes sandwiched between ceramic wafers
DE3924823A1 (en) * 1989-07-27 1991-02-21 Telefunken Electronic Gmbh Semiconductor module with several semiconductors on basic substrate - has cover substrate for all semiconductors with conductive track configuration with terminal face(s)
DE4403996A1 (en) * 1994-02-09 1995-08-10 Bosch Gmbh Robert Rectifier for three=phase generator
US5532512A (en) * 1994-10-03 1996-07-02 General Electric Company Direct stacked and flip chip power semiconductor device structures
DE19647590A1 (en) * 1996-11-18 1998-05-20 Abb Research Ltd High power semiconductor multi-chip module e.g. for power electronics

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108028242A (en) * 2015-09-30 2018-05-11 敏捷电源开关三维集成Apsi3D The method of semiconductor power device and manufacture semiconductor power device including additional traces
CN108028242B (en) * 2015-09-30 2021-08-17 敏捷电源开关三维集成Apsi3D Semiconductor power device including additional traces and method of manufacturing a semiconductor power device

Also Published As

Publication number Publication date
FR2786657A1 (en) 2000-06-02

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Effective date: 20080930