FR2786657A1 - Power electronic component with cooling surfaces includes dual cooling panels forming sandwich to enclose semiconductor element - Google Patents
Power electronic component with cooling surfaces includes dual cooling panels forming sandwich to enclose semiconductor element Download PDFInfo
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- FR2786657A1 FR2786657A1 FR9815156A FR9815156A FR2786657A1 FR 2786657 A1 FR2786657 A1 FR 2786657A1 FR 9815156 A FR9815156 A FR 9815156A FR 9815156 A FR9815156 A FR 9815156A FR 2786657 A1 FR2786657 A1 FR 2786657A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5385—Assembly of a plurality of insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/071—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next and on each other, i.e. mixed assemblies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0556—Disposition
- H01L2224/05568—Disposition the whole external layer protruding from the surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05575—Plural external layers
- H01L2224/0558—Plural external layers being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Abstract
Description
La présente invention concerne un composant électroniqueThe present invention relates to an electronic component
de puissance.power.
De manière habituelle, les composants électroniques de puissance, qui sont en particulier utilisés pour réaliser des onduleurs destinés à la traction ferroviaire, comprennent une semelle réalisée par exemple en cuivre. Une multiplicité de structures composites de type conducteurisolant-conducteur qui assument à la fois une fonction de transfert thermique et Usually, the electronic power components, which are in particular used to produce inverters intended for railway traction, comprise a sole made for example of copper. A multiplicity of composite structures of the conductor-insulator-conductor type which assume both a heat transfer function and
d'isolation électrique, sont rapportées sur cette semelle. electrical insulation, are reported on this sole.
Elles sont par exemple réalisées sous la forme d'un empilement cuivrecéramique-cuivre encore dénommé Direct Bonded Copper (DBC). Ces structures composites peuvent également être exécutées sous forme de substrats métalliques isolés (SMI) qui comprennent une couche inférieure en aluminium ou en cuivre, une couche intermédiaire en époxy et une couche supérieure en They are for example produced in the form of a copper-ceramic-copper stack also known as Direct Bonded Copper (DBC). These composite structures can also be executed in the form of insulated metallic substrates (SMI) which include a lower layer of aluminum or copper, an intermediate layer of epoxy and a higher layer of
cuivre éventuellement réalisée en plusieurs parties. copper possibly made in several parts.
Sur chaque structure composite sont disposés plusieurs circuits semiconducteurs de puissance, qui sont par exemple des transistors bipolaires à grille isolée dits IGBT, ou bien encore des diodes. Ces circuits semi-conducteurs sont en outre recouverts sur une de leurs faces par des plots de connexion, et sont assujettis à la couche métallique libre de la structure composite par leur face exempte de plots. Ces circuits y sont fixés par exemple par soudure tendre d'étain- plomb ou encore On each composite structure are arranged several semiconductor power circuits, which are for example bipolar transistors with an insulated gate called IGBT, or even diodes. These semiconductor circuits are also covered on one of their faces by connection pads, and are subject to the free metallic layer of the composite structure by their face free of pads. These circuits are fixed to it, for example by soft solder of lead-lead or else
d' étain-plomb-argent.of tin-lead-silver.
Puis on soude, sur chaque plot de connexion, plusieurs fils d'aluminium présentant typiquement un diamètre de 380 à 500 microns. Chacun de ces fils est également soudé sur la couche métallique supérieure de la structure composite. Cet ensemble formé par la semelle, les structures composites et les circuits semi-conducteurs de puissance, est ensuite disposé dans un boîtier rempli de gel silicone et recouvert d'un capot en résine époxy, de manière à former un composant électronique Then welded, on each connection pad, several aluminum wires typically having a diameter of 380 to 500 microns. Each of these wires is also welded to the upper metal layer of the composite structure. This assembly formed by the sole, the composite structures and the semiconductor power circuits, is then placed in a case filled with silicone gel and covered with an epoxy resin cover, so as to form an electronic component.
de puissance.power.
Ce dernier est disposé, de manière habituelle, sur un élément de refroidissement qui peut être une plaque à eau, un échangeur de chaleur à air ou encore une base d'évaporateur The latter is usually arranged on a cooling element which can be a water plate, an air heat exchanger or even an evaporator base.
"caloduc"'. Un tel élément est destiné à maintenir la tempéra- "heat pipe" '. Such an element is intended to maintain the temperature
ture à laquelle est soumis le composant électronique de puissance à une valeur inférieure à 125 C, de manière à en ture to which the power electronic component is subjected at a value lower than 125 C, so as to
conserver l'intégrité.maintain integrity.
De façon générale, le problème du refroidissement est tout particulièrement crucial dans le domaine des composants électroniques de puissance, dans la mesure o c'est cette température seuil d'environ 125 C qui détermine la valeur du In general, the problem of cooling is particularly crucial in the field of electronic power components, insofar as it is this threshold temperature of approximately 125 C which determines the value of the
courant admissible par le composant. current admissible by the component.
En particulier, si l'on désire augmenter la capacité nominale en courant de tels composants, il est nécessaire d'augmenter la quantité de matériau semi-conducteur utilisé, ce In particular, if it is desired to increase the nominal current capacity of such components, it is necessary to increase the quantity of semiconductor material used, this
qui induit bien évidemment une augmentation du prix de revient. which obviously leads to an increase in the cost price.
L'invention a donc pour but d'améliorer le refroidissement des composants électroniques de puissance, de manière soit à augmenter la tenue en courant de ces composants pour un volume et donc un prix de revient donnés, soit à en diminuer, pour un The invention therefore aims to improve the cooling of electronic power components, so as either to increase the current handling of these components for a given volume and therefore a cost price, or to decrease, for a
courant nominal donné, le volume et donc le prix de revient. given nominal current, the volume and therefore the cost price.
L'invention se propose plus particulièrement de réaliser un composant électronique de puissance dont la structure globale soit différente de celle des composants de l'art The invention more particularly proposes to produce an electronic power component whose overall structure is different from that of the components of the art
antérieur, et permette de ce fait d'en améliorer le refroidis- anterior, and thereby improves the cooling
sement. A cet effet, l'invention a pour objet un composant électronique de puissance comprenant une semelle métallique destinée à reposer sur un premier élément de refroidissement, sement. To this end, the subject of the invention is an electronic power component comprising a metal sole plate intended to rest on a first cooling element,
au moins une première structure composite de transfert thermi- at least a first composite thermal transfer structure
que et d'isolation électrique supportée par ladite semelle, et au moins un premier circuit semi-conducteur de puissance disposé sur ladite première structure composite et comprenant, sur sa face opposée à ladite structure, des plots métalliques de connexion, caractérisé en ce que lesdits plots de connexion sont assujettis, par leur face opposée à ladite première structure composite, à un réseau plan d'éléments conducteurs isolés entre eux, ce réseau plan appartenant à un ensemble de liaison rapporté, qui est apte à entrer en contact, par sa face that and of electrical insulation supported by said soleplate, and at least one first semiconductor power circuit disposed on said first composite structure and comprising, on its face opposite to said structure, metal connection pads, characterized in that said connection pads are subject, by their face opposite to said first composite structure, to a plane network of conductive elements isolated from each other, this plane network belonging to an attached connection assembly, which is capable of coming into contact, by its face
opposée au réseau plan, avec un deuxième élément de refroidis- opposite the flat network, with a second cooling element
sement. Selon d'autres caractéristiques de l'invention: - l'ensemble de liaison comprend au moins une sement. According to other characteristics of the invention: - the connection assembly comprises at least one
deuxième structure composite de transfert thermique et d'isola- second composite heat transfer and insulation structure
tion électrique; - l'ensemble de liaison comprend au moins un deuxième circuit semi-conducteur de puissance; - l'ensemble de liaison comprend un troisième élément de refroidissement intercalé entre les premier et deuxième circuits semi-conducteurs de puissance; - l'ensemble de liaison comprend un émetteur et une electric tion; - The connection assembly comprises at least a second power semiconductor circuit; - The connection assembly comprises a third cooling element interposed between the first and second power semiconductor circuits; - the link assembly includes a transmitter and a
grille communs à plusieurs circuits semi-conducteurs de puis- grid common to several semiconductor power circuits
sance disposés sur la semelle; etsance arranged on the sole; and
- les plots de connexion du premier circuit semi- - the connection pads of the first semi-circuit
conducteur sont assujettis au réseau plan de l'ensemble de conductor are subject to the network plan of the whole
liaison, par soudure d'au moins un bossage, notamment d'étain- connection, by welding at least one boss, in particular of tin-
plomb-argent.lead-silver.
L'invention a également pour objet un procédé de fabrica- The subject of the invention is also a method of manufacturing
tion d'un composant électronique de puissance, dans lequel on dispose successivement sur une semelle métallique, au moins une tion of an electronic power component, in which there is successively arranged on a metal soleplate, at least one
première structure composite de transfert thermique et d'isola- first composite heat transfer and insulation structure
tion électrique et au moins un premier circuit semi-conducteur de puissance comprenant, sur sa face opposée à ladite première structure composite, des plots métalliques de connexion, caractérisé en ce qu'on assujettit sur la face des plots opposée à ladite première structure composite, un réseau plan d'éléments conducteurs isolés entre eux, ce réseau plan appartenant à un ensemble de liaison, dont la face opposée au réseau plan est propre à entrer en contact avec un deuxième electrical power and at least one first power semiconductor circuit comprising, on its face opposite to said first composite structure, metal connection pads, characterized in that the faces of the pads opposite to said first composite structure are secured, a plane network of conductive elements isolated from each other, this plane network belonging to a connection assembly, the face opposite to the plane network is suitable for coming into contact with a second
élément de refroidissement.cooling element.
Selon une autre caractéristique de l'invention, on dispose, sur le réseau plan de l'ensemble de liaison, au moins un bossage de soudage, notamment en étain-plomb-argent, on According to another characteristic of the invention, there is, on the planar network of the connection assembly, at least one welding boss, in particular of tin-lead-silver,
rapproche ce réseau plan par rapport au premier circuit semi- brings this planar network closer to the first semi-circuit
conducteur de puissance de manière à faire rentrer en contact le ou chaque bossage avec les plots de connexion et on fait fondre le ou chaque bossage de manière à assujettir les plots power conductor so as to bring the or each boss into contact with the connection pads and the or each boss is melted so as to subject the pads
avec le réseau plan.with the plan network.
L'invention va être décrite ci-dessous, en référence aux dessins annexés, donnés uniquement à titre d'exemple non limitatif et dans lesquels: - les figures 1 à 3 sont des vues schématiques illustrant trois phases successives de la fabrication d'un The invention will be described below, with reference to the accompanying drawings, given only by way of nonlimiting example and in which: - Figures 1 to 3 are schematic views illustrating three successive phases of the manufacture of a
premier composant électronique de puissance conforme à l'inven- first electronic power component in accordance with the invention
tion; - la figure 4 est une vue schématique illustrant le composant électronique de puissance formé à partir des éléments représentés aux figure 1 à 3, ce composant étant intercalé entre deux éléments de refroidissement; - la figure 5 est une vue schématique illustrant un deuxième composant électronique de puissance conforme à l'invention; - la figure 6 est une vue de dessus du composant illustré à la figure 5, et la figure 7 est une vue schématique illustrant un troisième composant électronique de puissance conforme à tion; - Figure 4 is a schematic view illustrating the electronic power component formed from the elements shown in Figures 1 to 3, this component being interposed between two cooling elements; - Figure 5 is a schematic view illustrating a second electronic power component according to the invention; - Figure 6 is a top view of the component illustrated in Figure 5, and Figure 7 is a schematic view illustrating a third electronic power component according to
l'invention, intercalé entre deux éléments de refroidissement. the invention, sandwiched between two cooling elements.
La figure 1 illustre une première étape de fabrication Figure 1 illustrates a first manufacturing step
d'un composant électronique de puissance conforme à l'inven- a power electronic component in accordance with the invention
tion. Il s'agit de rapporter, sur une semelle 2 réalisée par tion. This is to report, on a sole 2 produced by
exemple en cuivre, deux structures composites 4 de type conduc- copper example, two composite structures 4 of conduction type
teur-isolant-conducteur, destinées à assumer des fonctions de transfert thermique et d'isolation électrique. Ces structures composites 4, qui comprennent deux couches conductrices 6A, 6B respectivement opposée et adjacente à la semelle, et une couche intermédiaire isolante 8, sont fixées à la semelle 2 par core-insulator-conductor, intended to assume functions of thermal transfer and electrical insulation. These composite structures 4, which comprise two conductive layers 6A, 6B respectively opposite and adjacent to the sole, and an insulating intermediate layer 8, are fixed to the sole 2 by
soudure, de manière classique.welding, in a conventional manner.
Deux circuits semi-conducteurs de puissance 10 sont disposés sur la face supérieure de chaque couche conductrice 6A opposée à la semelle 2. Chaque circuit 10 comprend, de manière habituelle, une multiplicité de plots 12 métalliques. Il est à noter que, contrairement aux composants électroniques de puissance habituelle, les plots 12 ne sont pas reliés à la Two power semiconductor circuits 10 are arranged on the upper face of each conductive layer 6A opposite the sole 2. Each circuit 10 usually comprises a multiplicity of metal studs 12. It should be noted that, unlike the usual power electronic components, the pads 12 are not connected to the
couche conductrice 6A au moyen de fils d'aluminium. conductive layer 6A by means of aluminum wires.
La figure 2 montre une deuxième étape de la fabrication Figure 2 shows a second stage of manufacturing
d'un composant électronique de puissance conforme à l'inven- a power electronic component in accordance with the invention
tion. Une semelle 14, analogue à celle 2 représentée à la figure 1, supporte deux structures composites 16 propres à assurer une fonction de transfert thermique et d'isolation électrique. Chacune de ces structures comprend une couche conductrice 18B adjacente à la semelle, une couche isolante 20, tion. A sole 14, similar to that 2 shown in Figure 1, supports two composite structures 16 suitable for providing a heat transfer and electrical insulation function. Each of these structures comprises a conductive layer 18B adjacent to the sole, an insulating layer 20,
et un réseau plan 18A d'éléments conducteurs isolés entre eux. and a flat network 18A of conductive elements isolated from each other.
L'agencement de ce réseau est adapté à la configuration électrique des circuits semi-conducteurs 10 que ce dernier doit revouvrir. L'ensemble ainsi formé par la semelle 14 et les structures composites 16 forme un ensemble de liaison désigné dans son ensemble par la référence 22 qui, comme cela sera explicité dans ce qui suit, permet de mettre en relation les plots 12 des circuits 10 avec un élément de refroidissement non The layout of this network is adapted to the electrical configuration of the semiconductor circuits 10 that the latter must cover. The assembly thus formed by the sole 14 and the composite structures 16 forms a connection assembly designated as a whole by the reference 22 which, as will be explained below, makes it possible to relate the pads 12 of the circuits 10 to a non cooling element
représenté sur les figures 1 et 2. shown in Figures 1 and 2.
La figure 3 illustre une troisième phase de réalisation Figure 3 illustrates a third phase of realization
d'un composant électronique de puissance conforme à l'inven- a power electronic component in accordance with the invention
tion, phase qui consiste tout d'abord à revêtir la face libre des plots 12 au moyen d'un multicouche de titane-nickel-or 24, dont l'épaisseur est d'environ 0,8 micromètres et qui est tion, phase which consists first of all in coating the free face of the studs 12 by means of a titanium-nickel-gold multilayer 24, the thickness of which is approximately 0.8 micrometers and which is
déposé par exemple au moyen d'un procédé de pulvérisation. deposited for example by means of a spraying process.
Sur ce multicouche 24, on dispose un bossage 26 réalisé en étainplomb-argent, dont la taille correspond à celle du plot 12. Dans l'exemple considéré, ce bossage a une composition On this multilayer 24, there is a boss 26 made of tin-silver lead, the size of which corresponds to that of the stud 12. In the example considered, this boss has a composition
d'environ 2 % d'étain, de 95,5 % de plomb et de 2,5 % d'argent. about 2% tin, 95.5% lead and 2.5% silver.
Il est à noter que la présence du multicouche 24 confère une It should be noted that the presence of the multilayer 24 gives a
excellente tenue mécanique du bossage 26 sur le plot 12. excellent mechanical strength of the boss 26 on the stud 12.
Il s'agit ensuite, comme le montre la figure 4, de retourner l'élément de liaison représenté à la figure 2 et de mettre en contact le réseau plan 18A avec le bossage 26 disposé sur chaque plot 12 de chaque circuit semi-conducteur de puissance 10. Puis on opère une fusion de chaque bossage 26 en It is then, as shown in Figure 4, to return the connecting element shown in Figure 2 and to bring the flat network 18A into contact with the boss 26 disposed on each pad 12 of each semiconductor circuit power 10. Then one operates a fusion of each boss 26 in
le chauffant par exemple à environ 330 OC pendant 10 secondes. heating it for example at around 330 OC for 10 seconds.
Les plots 12 sont alors assujettis au réseau plan 18A de The pads 12 are then subject to the plan network 18A of
l'élément de liaison 22.the connecting element 22.
Le composant électronique de puissance ainsi formé, désigné dans son ensemble par la référence 28, est alors The power electronic component thus formed, designated as a whole by the reference 28, is then
susceptible d'être intercalé entre deux éléments de refroidis- capable of being inserted between two cooling elements
sement respectivement inférieur 30 et supérieur 32. Ces éléments de refroidissement, dont la structure est classique, respectively lower 30 and upper 32. These cooling elements, whose structure is conventional,
sont par exemple des radiateurs à ailettes. are for example fin radiators.
La conformation du composant électronique de puissance 28 de l'invention permet de s'affranchir de la présence des fils d'aluminium dont sont habituellement pourvus les composants de l'art antérieur. En l'espèce, le réseau plan 18A de l'élément de liaison 22 assume le rôle habituellement dévolu à ces fils d'aluminium. Dans l'exemple décrit et représenté ci-dessus, il est prévu de disposer chaque structure composite de l'élément de liaison 22 sur une semelle 14. La présence de cette dernière The conformation of the electronic power component 28 of the invention makes it possible to dispense with the presence of the aluminum wires with which the components of the prior art are usually provided. In this case, the flat network 18A of the connecting element 22 assumes the role usually assigned to these aluminum wires. In the example described and shown above, provision is made to arrange each composite structure of the connecting element 22 on a sole 14. The presence of the latter
est optionnelle, dans la mesure o il est également envisagea- is optional, insofar as it is also envisaged
ble de rapporter chaque structure composite 4 de manière indépendante audessus des plots 12, puis de mettre directement en contact les structures composites 16 ainsi assujetties aux ble to report each composite structure 4 independently above the studs 12, then to directly contact the composite structures 16 thus subject to
plots 12, avec l'élément de refroidissement supérieur 32. studs 12, with the upper cooling element 32.
Les figures 5 et 6 représentent un deuxième mode de réalisation d'un composant électronique de puissance conforme Figures 5 and 6 show a second embodiment of a power electronic component conforming
à l'invention, désigné dans son ensemble par la référence 128. to the invention, designated as a whole by the reference 128.
Les éléments identiques à ceux représentés aux figures 1 et 4 seront désignées, dans ces figures 5 et 6, par les mêmes The elements identical to those represented in FIGS. 1 and 4 will be designated, in these FIGS. 5 and 6, by the same
numéros de référence augmentés de 100. reference numbers increased by 100.
Le composant électronique de puissance 128 inclut deux The 128 power electronic component includes two
barres conductrices 134, 136 réalisées par exemple en cuivre. conductive bars 134, 136 made for example of copper.
La première barre 134 est soudée sur la première rangée de plots 112A de l'ensemble des circuits de puissance 110 disposé sur la semelle 102. Cette première barre 134 joue le rôle d'un émetteur commun à l'ensemble de ces circuits 110. Elle est reliée à l'extérieur du composant pour former un interrupteur The first bar 134 is welded to the first row of studs 112A of the set of power circuits 110 arranged on the sole 102. This first bar 134 plays the role of a common transmitter to all of these circuits 110. It is connected to the outside of the component to form a switch
de base.basic.
De manière analogue, la seconde barre 136 est soudée sur Similarly, the second bar 136 is welded to
la seconde rangée de plot 112B de l'ensemble des circuits 110. the second row of stud 112B of all the circuits 110.
Cette seconde barre 136 assume une fonction de grille commune This second bar 136 assumes a common grid function
pour l'ensemble des circuits 110 et se trouve reliée à l'exté- for all circuits 110 and is connected to the outside
rieur du composant pour la commande de ce dernier. Ces deux barres conductrices 134, 136 sont assujetties aux plots 112 par soudure au moyen de bossages d'étain-plomb-argent 126, de manière analogue à ce qui a été décrit en référence aux figures 1 à 4. L'ensemble formé par ces barres 134 et 136 constitue un of the component for the control of the latter. These two conductive bars 134, 136 are subject to the studs 112 by soldering by means of tin-lead-silver bosses 126, in a manner analogous to what has been described with reference to FIGS. 1 to 4. The assembly formed by these bars 134 and 136 constitutes a
réseau plan d'éléments conducteurs isolés entre eux. planar network of conductive elements isolated from each other.
Le composant électronique de puissance 128 peut être The electronic power component 128 can be
intercalé entre deux éléments de refroidissement non représen- interposed between two cooling elements not shown
tés, destinés respectivement à entrer en contact avec la face tees, respectively intended to come into contact with the face
supérieure des barres 134, 136, ainsi qu'avec la face infé- bars 134, 136, as well as with the underside
rieure de la semelle 102. La figure 7 représente un troisième mode de réalisation sole of the sole 102. FIG. 7 represents a third embodiment
d'un composant électronique de puissance conforme à l'inven- a power electronic component in accordance with the invention
tion, désigné dans son ensemble par la référence 228. Les éléments identiques à ceux représentés aux figure 1 à 4 seront désignés, dans cette figure 7, par les mêmes numéros de tion, designated as a whole by the reference 228. The elements identical to those represented in FIGS. 1 to 4 will be designated, in this FIG. 7, by the same numbers of
référence augmentés de 200.reference increased by 200.
L'ensemble 222, qui assure la liaison entre les plots 212 des circuits 210 et l'élément de refroidissement supérieur 232, comprend des structures composites 238 analogues à celles 16 décrites précédemment. Ces structures 238 sont soudées, par leur réseau plan conducteur 238A, sur la face supérieure des plots 212 au moyen de bossages étain-plomb-argent 226, de manière analogue à ce qui a été décrit ci-dessus. Un troisième The assembly 222, which provides the connection between the studs 212 of the circuits 210 and the upper cooling element 232, comprises composite structures 238 similar to those 16 described above. These structures 238 are welded, by their conductive plane network 238A, to the upper face of the studs 212 by means of tin-lead-silver bosses 226, in a manner similar to that which has been described above. A third
élément de refroidissement 240 est disposé sur la face supé- cooling element 240 is arranged on the upper side
rieure de chacune des structures 238, au-dessus duquel sont successivement empilés des structures composites 242 identiques à celles 204, des circuits semi-conducteurs de puissance 244 et des structures composites 246 supplémentaires. Ces dernières sont soudées sur les plots 248 des circuits 244, de manière analogue à ce qui a été décrit précédemment. Ces structures 246 possèdent un réseau plan 246A d'éléments conducteurs isolés entre eux, de manière adaptée à la configuration électrique des of each of the structures 238, above which are successively stacked composite structures 242 identical to those 204, semiconductor power circuits 244 and additional composite structures 246. The latter are welded to the pads 248 of the circuits 244, in a similar manner to what has been described above. These structures 246 have a flat network 246A of conductive elements insulated from one another, in a manner adapted to the electrical configuration of the
circuits semi-conducteurs 244 auxquels ce réseau est adjacent. semiconductor circuits 244 to which this network is adjacent.
Le réseau plan 238A de chaque structure composite 238 assure le rôle habituellement exercé par les fils d'aluminium dans les composants de l'art antérieur, alors que les couches supérieures des structures composites 246 sont en contact avec l'élément de refroidissement supérieur 232. Il s'opère donc, au niveau de chaque circuit semi- conducteur 210 et 244, un refroidissement depuis les faces supérieures et inférieures de The flat network 238A of each composite structure 238 fulfills the role usually exercised by aluminum wires in the components of the prior art, while the upper layers of the composite structures 246 are in contact with the upper cooling element 232. There is therefore, at each semiconductor circuit 210 and 244, cooling from the upper and lower faces of
ces derniers.these latter.
On peut prévoir d'intercaler une semelle analogue à celle 202, immédiatement au-dessous ou au-dessus du troisième élément de refroidissement 240, ou bien encore immédiatement au-dessous de l'élément de refroidissement supérieur 232. De plus, on peut prévoir de connecter de manière électrique les deux circuits de Provision may be made to insert a sole similar to that 202, immediately below or above the third cooling element 240, or even immediately below the upper cooling element 232. In addition, provision may be made to electrically connect the two circuits of
puissance 210, 244 entre eux.power 210, 244 between them.
Dans l'ensemble des exemples décrits représentés ci- dessus, il a uniquement été fait mention de deux structures composites reposant sur l'unique semelle, chacune de ces structures supportant deux circuits semi-conducteurs de puissance. Bien entendu, on peut prévoir d'adapter un nombre quelconque de telles structures composites sur une unique semelle et de disposer également un nombre quelconque de circuits semiconducteurs de puissance sur une même structure composite. Ces circuits semi-conducteurs de puissance peuvent In all of the examples described represented above, only mention has been made of two composite structures resting on the single sole, each of these structures supporting two power semiconductor circuits. Of course, provision can be made to adapt any number of such composite structures on a single soleplate and also to have any number of power semiconductor circuits on the same composite structure. These power semiconductor circuits can
être par exemple des diodes ou des IGBT. for example be diodes or IGBTs.
Le composant électronique de puissance conforme à l'inven- The power electronic component in accordance with the invention
tion permet d'atteindre les objectifs précédemment mentionnés. tion achieves the previously mentioned objectives.
En effet, il permet de s'affranchir de la présence des fils Indeed, it allows to get rid of the presence of wires
d'aluminium dont sont pourvus les composants de l'art anté- aluminum with which the prior art components are provided
rieur. Or, ces fils constituent un facteur limitant à l'égard laughing. However, these threads constitute a limiting factor with regard to
du problème du refroidissement, dans la mesure o ils s'échauf- the cooling problem, as they heat up
fent de manière proportionnelle au carré du courant qui les traversent, et qu'il se révèle difficile de les refroidir puisqu'ils sont noyés dans du gel silicone. De plus, ces fils are proportional to the square of the current flowing through them, and it turns out to be difficult to cool them since they are embedded in silicone gel. In addition, these sons
d'aluminium peuvent être à l'origine de graves dysfonctionne- aluminum can cause serious dysfunction
ments de l'ensemble du composant électronique de puissance. En effet, ils sont soumis, en service à des cyclages thermiques, the entire electronic power component. Indeed, they are subjected, in service to thermal cycling,
de sorte qu'ils sont à même de se rompre. so that they are able to break.
Le composant de l'invention, outre qu'il est dépourvu de tels fils d'aluminium, assure un double refroidissement simultané des circuits semi-conducteurs de puissance qui le The component of the invention, in addition to being devoid of such aluminum wires, ensures double simultaneous cooling of the power semiconductor circuits which
composent à la fois depuis leurs faces inférieure et supérieu- compose both from their lower and upper sides
re. Ceci permet, pour un courant nominal donné, d'utiliser un volume de silicium égal environ au tiers de celui nécessaire pour la réalisation des composants électroniques de puissance de l'art antérieur. De plus, pour un volume de silicium re. This allows, for a given nominal current, to use a volume of silicon equal to approximately one third of that necessary for the production of the electronic power components of the prior art. In addition, for a volume of silicon
comparable à celui utilisé dans un composant de l'art anté- comparable to that used in a component of the prior art
rieur, le composant conforme à l'invention possède une tenue en laughing, the component according to the invention has a resistance in
courant environ trois fois supérieure. current about three times higher.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9815156A FR2786657B1 (en) | 1998-11-27 | 1998-11-27 | ELECTRONIC POWER COMPONENT HAVING COOLING MEANS AND METHOD FOR MANUFACTURING SUCH A COMPONENT |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9815156A FR2786657B1 (en) | 1998-11-27 | 1998-11-27 | ELECTRONIC POWER COMPONENT HAVING COOLING MEANS AND METHOD FOR MANUFACTURING SUCH A COMPONENT |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2786657A1 true FR2786657A1 (en) | 2000-06-02 |
| FR2786657B1 FR2786657B1 (en) | 2001-06-01 |
Family
ID=9533442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9815156A Expired - Fee Related FR2786657B1 (en) | 1998-11-27 | 1998-11-27 | ELECTRONIC POWER COMPONENT HAVING COOLING MEANS AND METHOD FOR MANUFACTURING SUCH A COMPONENT |
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| FR (1) | FR2786657B1 (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2814907A1 (en) * | 2000-10-03 | 2002-04-05 | Alstom | Electronic power module for branch of waveform generator, comprising transistor-diode pairs connected in series, for use in electric power distribution circuits in railway traction |
| WO2002049104A2 (en) * | 2000-12-13 | 2002-06-20 | Daimlerchrysler Ag | Power module having improved transient thermal impedance |
| EP1378941A2 (en) * | 2002-07-03 | 2004-01-07 | Hitachi, Ltd. | Semiconductor module and power conversion device |
| EP1378938A2 (en) * | 2002-07-03 | 2004-01-07 | Hitachi, Ltd. | Semiconductor module and power conversion device |
| WO2004008618A3 (en) * | 2002-07-10 | 2004-04-29 | Bosch Gmbh Robert | Active rectifier module for three-phase generators of vehicles |
| GB2444293A (en) * | 2006-08-30 | 2008-06-04 | Denso Corp | Double substrate power electronics package |
| GB2444978A (en) * | 2006-08-30 | 2008-06-25 | Denso Corp | Interconnections between two substrates in power electronic package for chips and components. |
| WO2008154265A1 (en) * | 2007-06-08 | 2008-12-18 | Continental Automotive Systems Us, Inc. | Insulated gate bipolar transistor assembly |
| US7557434B2 (en) | 2006-08-29 | 2009-07-07 | Denso Corporation | Power electronic package having two substrates with multiple electronic components |
| US7999369B2 (en) | 2006-08-29 | 2011-08-16 | Denso Corporation | Power electronic package having two substrates with multiple semiconductor chips and electronic components |
| ITUB20153344A1 (en) * | 2015-09-02 | 2017-03-02 | St Microelectronics Srl | ELECTRONIC POWER MODULE WITH IMPROVED THERMAL DISSIPATION AND ITS MANUFACTURING METHOD |
| EP3151274A1 (en) * | 2015-09-30 | 2017-04-05 | Agile POWER SWITCH 3D - INTEGRATION aPSI3D | A semiconductor power device comprising additional tracks and method of manufacturing the semiconductor power device |
| IT201900013743A1 (en) * | 2019-08-01 | 2021-02-01 | St Microelectronics Srl | ENCAPSULATED ELECTRONIC POWER DEVICE, IN PARTICULAR BRIDGE CIRCUIT INCLUDING POWER TRANSISTORS, AND RELATED ASSEMBLY PROCEDURE |
| EP4002454A1 (en) * | 2020-11-23 | 2022-05-25 | Hitachi Energy Switzerland AG | Electrical contact arrangement, power semiconductor module, method for manufacturing an electrical contact arrangement and method for manufacturing a power semiconductor module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2814907A1 (en) * | 2000-10-03 | 2002-04-05 | Alstom | Electronic power module for branch of waveform generator, comprising transistor-diode pairs connected in series, for use in electric power distribution circuits in railway traction |
| US6812559B2 (en) | 2000-12-13 | 2004-11-02 | Daimlerchrysler Ag | Power module with improved transient thermal impedance |
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| EP1378941A3 (en) * | 2002-07-03 | 2004-04-28 | Hitachi, Ltd. | Semiconductor module and power conversion device |
| EP1378938A3 (en) * | 2002-07-03 | 2004-06-16 | Hitachi, Ltd. | Semiconductor module and power conversion device |
| EP1378938A2 (en) * | 2002-07-03 | 2004-01-07 | Hitachi, Ltd. | Semiconductor module and power conversion device |
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| EP1378941A2 (en) * | 2002-07-03 | 2004-01-07 | Hitachi, Ltd. | Semiconductor module and power conversion device |
| WO2004008618A3 (en) * | 2002-07-10 | 2004-04-29 | Bosch Gmbh Robert | Active rectifier module for three-phase generators of vehicles |
| US7420224B2 (en) | 2002-07-10 | 2008-09-02 | Robert Bosch Gmbh | Active rectifier module for three-phase generators of vehicles |
| US7557434B2 (en) | 2006-08-29 | 2009-07-07 | Denso Corporation | Power electronic package having two substrates with multiple electronic components |
| US8432030B2 (en) | 2006-08-29 | 2013-04-30 | Denso Corporation | Power electronic package having two substrates with multiple semiconductor chips and electronic components |
| US7999369B2 (en) | 2006-08-29 | 2011-08-16 | Denso Corporation | Power electronic package having two substrates with multiple semiconductor chips and electronic components |
| GB2444293B (en) * | 2006-08-30 | 2011-03-30 | Denso Corp | Power electronic package having two substrates with multiple electronic components |
| GB2444978A (en) * | 2006-08-30 | 2008-06-25 | Denso Corp | Interconnections between two substrates in power electronic package for chips and components. |
| GB2444978B (en) * | 2006-08-30 | 2012-03-14 | Denso Corp | Power electronic package having two substrates with multiple semiconductor chips and electronic components |
| GB2444293A (en) * | 2006-08-30 | 2008-06-04 | Denso Corp | Double substrate power electronics package |
| WO2008154265A1 (en) * | 2007-06-08 | 2008-12-18 | Continental Automotive Systems Us, Inc. | Insulated gate bipolar transistor assembly |
| US7973387B2 (en) | 2007-06-08 | 2011-07-05 | Continental Automotive Systems Us, Inc. | Insulated gate bipolar transistor |
| ITUB20153344A1 (en) * | 2015-09-02 | 2017-03-02 | St Microelectronics Srl | ELECTRONIC POWER MODULE WITH IMPROVED THERMAL DISSIPATION AND ITS MANUFACTURING METHOD |
| EP3139407A1 (en) * | 2015-09-02 | 2017-03-08 | STMicroelectronics S.r.l. | Electronic power module with enhanced thermal dissipation and manufacturing method thereof |
| US9986631B2 (en) | 2015-09-02 | 2018-05-29 | Stmicroelectronics S.R.L. | Electronic power module with enhanced thermal dissipation and manufacturing method thereof |
| WO2017054855A1 (en) * | 2015-09-30 | 2017-04-06 | Agile Power Switch 3D - Integration Apsi3D | A semiconductor power device comprising additional tracks and method of manufacturing the semiconductor power device |
| EP3151274A1 (en) * | 2015-09-30 | 2017-04-05 | Agile POWER SWITCH 3D - INTEGRATION aPSI3D | A semiconductor power device comprising additional tracks and method of manufacturing the semiconductor power device |
| US10332828B2 (en) | 2015-09-30 | 2019-06-25 | Agile Power Switch 3D—Integration Apsi3D | Semiconductor power device comprising additional tracks and method of manufacturing the semiconductor power device |
| IT201900013743A1 (en) * | 2019-08-01 | 2021-02-01 | St Microelectronics Srl | ENCAPSULATED ELECTRONIC POWER DEVICE, IN PARTICULAR BRIDGE CIRCUIT INCLUDING POWER TRANSISTORS, AND RELATED ASSEMBLY PROCEDURE |
| EP3780100A1 (en) * | 2019-08-01 | 2021-02-17 | STMicroelectronics S.r.l. | Packaged power electronic device with plural dbc substrates and assembling process thereof |
| US11864361B2 (en) | 2019-08-01 | 2024-01-02 | Stmicroelectronics S.R.L. | Packaged power electronic device, in particular bridge circuit comprising power transistors, and assembling process thereof |
| EP4002454A1 (en) * | 2020-11-23 | 2022-05-25 | Hitachi Energy Switzerland AG | Electrical contact arrangement, power semiconductor module, method for manufacturing an electrical contact arrangement and method for manufacturing a power semiconductor module |
| WO2022106721A1 (en) * | 2020-11-23 | 2022-05-27 | Hitachi Energy Switzerland Ag | Electrical contact arrangement, power semiconductor module, method for manufacturing an electrical contact arrangement and method for manufacturing a power semiconductor module |
| JP2023541323A (en) * | 2020-11-23 | 2023-09-29 | ヒタチ・エナジー・スウィツァーランド・アクチェンゲゼルシャフト | Electrical contact configuration, power semiconductor module, method for manufacturing electrical contact configuration, and method for manufacturing power semiconductor module |
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|---|---|
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