GB2444978B - Power electronic package having two substrates with multiple semiconductor chips and electronic components - Google Patents

Power electronic package having two substrates with multiple semiconductor chips and electronic components

Info

Publication number
GB2444978B
GB2444978B GB0617100.3A GB0617100A GB2444978B GB 2444978 B GB2444978 B GB 2444978B GB 0617100 A GB0617100 A GB 0617100A GB 2444978 B GB2444978 B GB 2444978B
Authority
GB
United Kingdom
Prior art keywords
substrates
semiconductor chips
multiple semiconductor
electronic components
power electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB0617100.3A
Other versions
GB2444978A8 (en
GB0617100D0 (en
GB2444978A (en
Inventor
Rajesh Kumar Malhan
Mark C Johnson
Cyril Buttay
Jeremy Rashid
Florin Udrea
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University of Sheffield
University of Cambridge
Denso Corp
Original Assignee
University of Sheffield
University of Cambridge
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University of Sheffield, University of Cambridge, Denso Corp filed Critical University of Sheffield
Priority to GB0617100.3A priority Critical patent/GB2444978B/en
Publication of GB0617100D0 publication Critical patent/GB0617100D0/en
Publication of GB2444978A publication Critical patent/GB2444978A/en
Publication of GB2444978A8 publication Critical patent/GB2444978A8/en
Application granted granted Critical
Publication of GB2444978B publication Critical patent/GB2444978B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H01L23/4735—Jet impingement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
    • H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5385—Assembly of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/06181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
    • H01L2224/331—Disposition
    • H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H01L2224/33181—On opposite sides of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13062—Junction field-effect transistor [JFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
GB0617100.3A 2006-08-30 2006-08-30 Power electronic package having two substrates with multiple semiconductor chips and electronic components Expired - Fee Related GB2444978B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB0617100.3A GB2444978B (en) 2006-08-30 2006-08-30 Power electronic package having two substrates with multiple semiconductor chips and electronic components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0617100.3A GB2444978B (en) 2006-08-30 2006-08-30 Power electronic package having two substrates with multiple semiconductor chips and electronic components

Publications (4)

Publication Number Publication Date
GB0617100D0 GB0617100D0 (en) 2006-10-11
GB2444978A GB2444978A (en) 2008-06-25
GB2444978A8 GB2444978A8 (en) 2008-08-27
GB2444978B true GB2444978B (en) 2012-03-14

Family

ID=37137059

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0617100.3A Expired - Fee Related GB2444978B (en) 2006-08-30 2006-08-30 Power electronic package having two substrates with multiple semiconductor chips and electronic components

Country Status (1)

Country Link
GB (1) GB2444978B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8034666B2 (en) 2009-11-15 2011-10-11 Microsemi Corporation Multi-layer thick-film RF package
US8410601B2 (en) 2009-11-15 2013-04-02 Microsemi Corporation RF package
WO2019064775A1 (en) * 2017-09-29 2019-04-04 日立金属株式会社 Semiconductor device and production method therefor
JP7268563B2 (en) * 2019-09-30 2023-05-08 株式会社デンソー semiconductor equipment
CN115424980B (en) * 2022-11-04 2023-02-07 成都复锦功率半导体技术发展有限公司 Stacking and packaging method for double-side interconnection of chips

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4317215A1 (en) * 1993-05-24 1994-12-01 Abb Research Ltd High-voltage component
EP0931346A1 (en) * 1996-09-30 1999-07-28 Siemens Aktiengesellschaft Microelectronic component with a sandwich design
FR2786657A1 (en) * 1998-11-27 2000-06-02 Alstom Technology Power electronic component with cooling surfaces includes dual cooling panels forming sandwich to enclose semiconductor element
US6072240A (en) * 1998-10-16 2000-06-06 Denso Corporation Semiconductor chip package
US6337512B1 (en) * 1999-03-31 2002-01-08 Abb Research Ltd. Semiconductor module
EP1298108A2 (en) * 2001-09-28 2003-04-02 Dowa Mining Co., Ltd. Metal/ceramic bonding article
WO2004034428A2 (en) * 2002-10-04 2004-04-22 International Rectifier Corporation Semiconductor device package
US20040169266A1 (en) * 2003-02-27 2004-09-02 Power-One Limited Power supply packaging system
US20040183188A1 (en) * 2002-12-25 2004-09-23 Denso Corporation Semiconductor module and semiconductor device
EP1522138A2 (en) * 2002-07-10 2005-04-13 Robert Bosch Gmbh Active rectifier module for three-phase generators of vehicles
EP1531494A2 (en) * 2003-11-13 2005-05-18 Delphi Technologies, Inc. Double-sided multi-chip circuit component
US20050151161A1 (en) * 1999-09-24 2005-07-14 Rainer Topp Electronic assembly
DE102004050792A1 (en) * 2004-10-19 2006-04-20 Robert Bosch Gmbh Component module for high temperature applications and method for manufacturing such a component module
US20060163648A1 (en) * 2002-05-11 2006-07-27 Henning Hauenstein Semiconductor component

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4317215A1 (en) * 1993-05-24 1994-12-01 Abb Research Ltd High-voltage component
EP0931346A1 (en) * 1996-09-30 1999-07-28 Siemens Aktiengesellschaft Microelectronic component with a sandwich design
US6072240A (en) * 1998-10-16 2000-06-06 Denso Corporation Semiconductor chip package
FR2786657A1 (en) * 1998-11-27 2000-06-02 Alstom Technology Power electronic component with cooling surfaces includes dual cooling panels forming sandwich to enclose semiconductor element
US6337512B1 (en) * 1999-03-31 2002-01-08 Abb Research Ltd. Semiconductor module
US20050151161A1 (en) * 1999-09-24 2005-07-14 Rainer Topp Electronic assembly
EP1298108A2 (en) * 2001-09-28 2003-04-02 Dowa Mining Co., Ltd. Metal/ceramic bonding article
US20060163648A1 (en) * 2002-05-11 2006-07-27 Henning Hauenstein Semiconductor component
EP1522138A2 (en) * 2002-07-10 2005-04-13 Robert Bosch Gmbh Active rectifier module for three-phase generators of vehicles
WO2004034428A2 (en) * 2002-10-04 2004-04-22 International Rectifier Corporation Semiconductor device package
US20040183188A1 (en) * 2002-12-25 2004-09-23 Denso Corporation Semiconductor module and semiconductor device
US20040169266A1 (en) * 2003-02-27 2004-09-02 Power-One Limited Power supply packaging system
EP1531494A2 (en) * 2003-11-13 2005-05-18 Delphi Technologies, Inc. Double-sided multi-chip circuit component
DE102004050792A1 (en) * 2004-10-19 2006-04-20 Robert Bosch Gmbh Component module for high temperature applications and method for manufacturing such a component module

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
'Double-Sided Cooling for High Power IGBT Modules Using Flip Chip Technology', Gillot et al. IEEE Transactions on components and packaging technologies, Vol. 24, No. 4, Pages 698-704 (2001) *
IEEE Transactions on components and packaging technologies, Vol 24,No 4,December 2001,Pages 698-704 *

Also Published As

Publication number Publication date
GB2444978A8 (en) 2008-08-27
GB0617100D0 (en) 2006-10-11
GB2444978A (en) 2008-06-25

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PCNP Patent ceased through non-payment of renewal fee

Effective date: 20170830