FR2786614A1 - Dispositif de semi-conducteurs ayant une faible capacite parasite - Google Patents

Dispositif de semi-conducteurs ayant une faible capacite parasite Download PDF

Info

Publication number
FR2786614A1
FR2786614A1 FR9914809A FR9914809A FR2786614A1 FR 2786614 A1 FR2786614 A1 FR 2786614A1 FR 9914809 A FR9914809 A FR 9914809A FR 9914809 A FR9914809 A FR 9914809A FR 2786614 A1 FR2786614 A1 FR 2786614A1
Authority
FR
France
Prior art keywords
substrate
grown
semiconductor device
conductive
vcsel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR9914809A
Other languages
English (en)
French (fr)
Inventor
Jan Jonsson
Mikael Wickstrom
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Microsemi Semiconductor AB
Original Assignee
Mitel Semiconductor AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitel Semiconductor AB filed Critical Mitel Semiconductor AB
Publication of FR2786614A1 publication Critical patent/FR2786614A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0208—Semi-insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Semiconductor Lasers (AREA)
FR9914809A 1998-12-01 1999-11-19 Dispositif de semi-conducteurs ayant une faible capacite parasite Withdrawn FR2786614A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9826227A GB2344455A (en) 1998-12-01 1998-12-01 Semiconductor device with low parasitic capacitance
US09/425,953 US6287881B1 (en) 1998-12-01 1999-10-25 Semiconductor device with low parasitic capacitance

Publications (1)

Publication Number Publication Date
FR2786614A1 true FR2786614A1 (fr) 2000-06-02

Family

ID=26314752

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9914809A Withdrawn FR2786614A1 (fr) 1998-12-01 1999-11-19 Dispositif de semi-conducteurs ayant une faible capacite parasite

Country Status (5)

Country Link
US (1) US6287881B1 (cg-RX-API-DMAC10.html)
DE (1) DE19956344A1 (cg-RX-API-DMAC10.html)
FR (1) FR2786614A1 (cg-RX-API-DMAC10.html)
GB (1) GB2344455A (cg-RX-API-DMAC10.html)
SE (1) SE9904163D0 (cg-RX-API-DMAC10.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7755604B2 (en) 2006-06-19 2010-07-13 Cypress Semiconductor Corporation Optical navigation sensor with tracking and lift detection for optically transparent contact surfaces

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3748480A (en) * 1970-11-02 1973-07-24 Motorola Inc Monolithic coupling device including light emitter and light sensor
US3881113A (en) * 1973-12-26 1975-04-29 Ibm Integrated optically coupled light emitter and sensor
US4124860A (en) * 1975-02-27 1978-11-07 Optron, Inc. Optical coupler
JPS52137279A (en) * 1976-05-12 1977-11-16 Hitachi Ltd Semiconductor device for optical coupling
US4143385A (en) * 1976-09-30 1979-03-06 Hitachi, Ltd. Photocoupler
US4274104A (en) * 1979-05-21 1981-06-16 International Business Machines Corporation Electrooptical integrated circuit communication
US4275404A (en) * 1979-10-05 1981-06-23 Bell Telephone Laboratories, Incorporated Monolithic opto-isolator
JP2772001B2 (ja) * 1988-11-28 1998-07-02 株式会社日立製作所 半導体装置
JP3012673B2 (ja) * 1990-08-21 2000-02-28 三菱電機株式会社 半導体装置の製造方法
SE469204B (sv) * 1991-10-01 1993-05-24 Asea Brown Boveri Monolitisk optokopplare
JPH0927611A (ja) * 1995-07-11 1997-01-28 Seiko Epson Corp 光検出部を備えた面発光型半導体レーザ及びその製造方法並びにそれを用いたセンサ

Also Published As

Publication number Publication date
GB2344455A (en) 2000-06-07
SE9904163D0 (sv) 1999-11-18
DE19956344A1 (de) 2000-06-08
GB9826227D0 (en) 1999-01-20
US6287881B1 (en) 2001-09-11
SE9904163L (cg-RX-API-DMAC10.html) 2000-06-02

Similar Documents

Publication Publication Date Title
CA1238973A (en) Surface-emitting light emitting device
US6936486B2 (en) Low voltage multi-junction vertical cavity surface emitting laser
US5455429A (en) Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material
US5253263A (en) High-power surface-emitting semiconductor injection laser with etched internal 45 degree and 90 degree micromirrors
US6449296B1 (en) Semiconductor laser device
EP0623243A1 (en) Integration of transistors with vertical cavity surface emitting lasers
CA2194003A1 (fr) Laser semi-conducteur a emission par la surface
CA2194004A1 (fr) Procede de fabrication d'un laser semi-conducteur a emission par la surface
EP2533380A1 (en) High speed lasing device
US20030185268A1 (en) Apparatus and method for improving electrical conduction structure of a vertical cavity surface emitting laser
US4967241A (en) Semiconductor light emitting device
US4999843A (en) Vertical semiconductor laser with lateral electrode contact
GB2578681A (en) Monolithic series-connected edge-emitting-laser array and method of fabrication
US4819048A (en) Optoelectronic bistable apparatus
KR100205731B1 (ko) 광 검출부를 구비한 면 발광형 반도체 레이저 및 그 제조방법과 그것을 이용한 센서
JP3206097B2 (ja) 面発光型半導体レーザ
FR2465337A1 (fr) Procede de fabrication d'un laser a semi-conducteur a confinements transverses optique et electrique et laser obtenu par ce procede
JP2001521291A (ja) フィラメント状多波長面発光型垂直共振器レーザ
US6852557B1 (en) Method of fabricating long-wavelength VCSEL and apparatus
US5574745A (en) Semiconductor devices incorporating P-type and N-type impurity induced layer disordered material
US4862230A (en) Double heterostructure light emitting diode
FR2661566A1 (fr) Laser compact a semi-conducteur du type a pompage electronique.
US7169629B2 (en) VCSEL and the fabrication method of the same
JPH05251828A (ja) 半導体レーザ
US6287881B1 (en) Semiconductor device with low parasitic capacitance

Legal Events

Date Code Title Description
ST Notification of lapse