FR2771210B1 - Procede de mise en oeuvre de la premiere programmation d'une memoire et memoire correspondante - Google Patents
Procede de mise en oeuvre de la premiere programmation d'une memoire et memoire correspondanteInfo
- Publication number
- FR2771210B1 FR2771210B1 FR9714686A FR9714686A FR2771210B1 FR 2771210 B1 FR2771210 B1 FR 2771210B1 FR 9714686 A FR9714686 A FR 9714686A FR 9714686 A FR9714686 A FR 9714686A FR 2771210 B1 FR2771210 B1 FR 2771210B1
- Authority
- FR
- France
- Prior art keywords
- memory
- programming
- implementing
- procedure
- corresponding memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/20—Initialising; Data preset; Chip identification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9714686A FR2771210B1 (fr) | 1997-11-18 | 1997-11-18 | Procede de mise en oeuvre de la premiere programmation d'une memoire et memoire correspondante |
US09/195,276 US6091641A (en) | 1997-11-18 | 1998-11-18 | Non-volatile memory device and method for the programming of the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9714686A FR2771210B1 (fr) | 1997-11-18 | 1997-11-18 | Procede de mise en oeuvre de la premiere programmation d'une memoire et memoire correspondante |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2771210A1 FR2771210A1 (fr) | 1999-05-21 |
FR2771210B1 true FR2771210B1 (fr) | 2000-02-04 |
Family
ID=9513678
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9714686A Expired - Fee Related FR2771210B1 (fr) | 1997-11-18 | 1997-11-18 | Procede de mise en oeuvre de la premiere programmation d'une memoire et memoire correspondante |
Country Status (2)
Country | Link |
---|---|
US (1) | US6091641A (fr) |
FR (1) | FR2771210B1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7170315B2 (en) * | 2003-07-31 | 2007-01-30 | Actel Corporation | Programmable system on a chip |
US7521960B2 (en) * | 2003-07-31 | 2009-04-21 | Actel Corporation | Integrated circuit including programmable logic and external-device chip-enable override control |
US7138824B1 (en) | 2004-05-10 | 2006-11-21 | Actel Corporation | Integrated multi-function analog circuit including voltage, current, and temperature monitor and gate-driver circuit blocks |
US7099189B1 (en) * | 2004-10-05 | 2006-08-29 | Actel Corporation | SRAM cell controlled by non-volatile memory cell |
US7116181B2 (en) * | 2004-12-21 | 2006-10-03 | Actel Corporation | Voltage- and temperature-compensated RC oscillator circuit |
US7119398B1 (en) | 2004-12-22 | 2006-10-10 | Actel Corporation | Power-up and power-down circuit for system-on-a-chip integrated circuit |
US7446378B2 (en) * | 2004-12-29 | 2008-11-04 | Actel Corporation | ESD protection structure for I/O pad subject to both positive and negative voltages |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4763305A (en) * | 1985-11-27 | 1988-08-09 | Motorola, Inc. | Intelligent write in an EEPROM with data and erase check |
DE69013237T2 (de) * | 1989-06-19 | 1995-02-23 | Texas Instruments Inc | Schaltung und Verfahren zur Vorbereitung gelöschter EEPROMS vor der Programmierung. |
FR2713008B1 (fr) * | 1993-11-23 | 1995-12-22 | Sgs Thomson Microelectronics | Mémoire non volatile modifiable électriquement avec contrôle d'écriture. |
FR2718559B1 (fr) * | 1994-04-08 | 1996-06-07 | Sgs Thomson Microelectronics | Mémoire non volatile modifiable électriquement incorporant des fonctions de test. |
US5890193A (en) * | 1995-07-28 | 1999-03-30 | Micron Technology, Inc. | Architecture for state machine for controlling internal operations of flash memory |
-
1997
- 1997-11-18 FR FR9714686A patent/FR2771210B1/fr not_active Expired - Fee Related
-
1998
- 1998-11-18 US US09/195,276 patent/US6091641A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2771210A1 (fr) | 1999-05-21 |
US6091641A (en) | 2000-07-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20100730 |