FR2769639B1 - Filiere pour le tirage de cristaux a partir d'un bain fondu - Google Patents

Filiere pour le tirage de cristaux a partir d'un bain fondu

Info

Publication number
FR2769639B1
FR2769639B1 FR9712680A FR9712680A FR2769639B1 FR 2769639 B1 FR2769639 B1 FR 2769639B1 FR 9712680 A FR9712680 A FR 9712680A FR 9712680 A FR9712680 A FR 9712680A FR 2769639 B1 FR2769639 B1 FR 2769639B1
Authority
FR
France
Prior art keywords
die
molten bath
drawing crystals
crystals
molten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9712680A
Other languages
English (en)
French (fr)
Other versions
FR2769639A1 (fr
Inventor
Fred Theodore
Jean Delepine
Jean Philippe Nabot
Vladimir Kurlov
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat à l'Énergie Atomique et Aux Énergies Alternatives
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR9712680A priority Critical patent/FR2769639B1/fr
Priority to EP98949032A priority patent/EP1021599B1/fr
Priority to US09/529,305 priority patent/US6325852B1/en
Priority to JP2000516090A priority patent/JP2001520160A/ja
Priority to DE69804480T priority patent/DE69804480T2/de
Priority to PCT/FR1998/002171 priority patent/WO1999019545A1/fr
Publication of FR2769639A1 publication Critical patent/FR2769639A1/fr
Application granted granted Critical
Publication of FR2769639B1 publication Critical patent/FR2769639B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/104—Means for forming a hollow structure [e.g., tube, polygon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1036—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die]
    • Y10T117/1044—Seed pulling including solid member shaping means other than seed or product [e.g., EDFG die] including means forming a flat shape [e.g., ribbon]
    • Y10T117/1048—Pulling includes a horizontal component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR9712680A 1997-10-10 1997-10-10 Filiere pour le tirage de cristaux a partir d'un bain fondu Expired - Fee Related FR2769639B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR9712680A FR2769639B1 (fr) 1997-10-10 1997-10-10 Filiere pour le tirage de cristaux a partir d'un bain fondu
EP98949032A EP1021599B1 (fr) 1997-10-10 1998-10-09 Filiere pour le tirage de cristaux a partir d'un bain fondu
US09/529,305 US6325852B1 (en) 1997-10-10 1998-10-09 Die for shaped crystal growth from a molten bath
JP2000516090A JP2001520160A (ja) 1997-10-10 1998-10-09 溶湯から結晶を引き出すためのダイ
DE69804480T DE69804480T2 (de) 1997-10-10 1998-10-09 Düse für kristallziehung aus einer schmelze
PCT/FR1998/002171 WO1999019545A1 (fr) 1997-10-10 1998-10-09 Filiere pour le tirage de cristaux a partir d'un bain fondu

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9712680A FR2769639B1 (fr) 1997-10-10 1997-10-10 Filiere pour le tirage de cristaux a partir d'un bain fondu

Publications (2)

Publication Number Publication Date
FR2769639A1 FR2769639A1 (fr) 1999-04-16
FR2769639B1 true FR2769639B1 (fr) 1999-11-12

Family

ID=9512081

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9712680A Expired - Fee Related FR2769639B1 (fr) 1997-10-10 1997-10-10 Filiere pour le tirage de cristaux a partir d'un bain fondu

Country Status (6)

Country Link
US (1) US6325852B1 (cg-RX-API-DMAC7.html)
EP (1) EP1021599B1 (cg-RX-API-DMAC7.html)
JP (1) JP2001520160A (cg-RX-API-DMAC7.html)
DE (1) DE69804480T2 (cg-RX-API-DMAC7.html)
FR (1) FR2769639B1 (cg-RX-API-DMAC7.html)
WO (1) WO1999019545A1 (cg-RX-API-DMAC7.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL162518A0 (en) * 2004-06-14 2005-11-20 Rafael Armament Dev Authority Dome
WO2009015350A1 (en) * 2007-07-26 2009-01-29 S.O.I.Tec Silicon On Insulator Technologies Epitaxial methods and templates grown by the methods
JP5999044B2 (ja) * 2013-07-30 2016-09-28 トヨタ自動車株式会社 引上式連続鋳造装置及び引上式連続鋳造方法
JP6701615B2 (ja) * 2014-03-10 2020-05-27 トヨタ自動車株式会社 引上式連続鋳造装置及び引上式連続鋳造方法
CN104088012B (zh) * 2014-07-31 2016-09-07 中国电子科技集团公司第二十六研究所 一种直接生长蓝宝石整流罩的设备
JP7101194B2 (ja) * 2017-12-07 2022-07-14 京セラ株式会社 単結晶、ｅｆｇ装置用金型、ｅｆｇ装置、単結晶の製造方法、および単結晶部材の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4430305A (en) * 1979-02-12 1984-02-07 Mobil Solar Energy Corporation Displaced capillary dies
CA1165212A (en) * 1979-08-10 1984-04-10 Aaron S. Taylor Crucible assembly
DE3310815A1 (de) * 1983-03-24 1984-09-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum ziehen von kristallinen koerpern aus der schmelze unter verwendung von als ziehduesen wirkenden formgebungsteilen
JPS60108398A (ja) * 1983-11-15 1985-06-13 Toshiba Corp シリコン・リボン結晶の成長方法
JPS61106489A (ja) * 1984-10-31 1986-05-24 Toshiba Corp 帯状シリコン結晶の製造方法
FR2712608B1 (fr) * 1993-11-16 1996-01-12 Commissariat Energie Atomique Procédé de fabrication de pièces en matériau polycristallin ou monocristallin par croissance à partir d'un bain fondu.
US5551977A (en) * 1994-11-14 1996-09-03 Ase Americas, Inc. Susceptor for EFG crystal growth apparatus

Also Published As

Publication number Publication date
WO1999019545A1 (fr) 1999-04-22
EP1021599A1 (fr) 2000-07-26
DE69804480D1 (de) 2002-05-02
DE69804480T2 (de) 2002-10-31
FR2769639A1 (fr) 1999-04-16
EP1021599B1 (fr) 2002-03-27
US6325852B1 (en) 2001-12-04
JP2001520160A (ja) 2001-10-30

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20130628