FR2756573B1 - Procede de croissance cristalline d'une couche mince d'oxyde a elements multiples contenant du bismuth en tant qu'element constituant - Google Patents

Procede de croissance cristalline d'une couche mince d'oxyde a elements multiples contenant du bismuth en tant qu'element constituant

Info

Publication number
FR2756573B1
FR2756573B1 FR9714993A FR9714993A FR2756573B1 FR 2756573 B1 FR2756573 B1 FR 2756573B1 FR 9714993 A FR9714993 A FR 9714993A FR 9714993 A FR9714993 A FR 9714993A FR 2756573 B1 FR2756573 B1 FR 2756573B1
Authority
FR
France
Prior art keywords
thin film
film containing
oxide thin
crystalline growth
containing bismuth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9714993A
Other languages
English (en)
Other versions
FR2756573A1 (fr
Inventor
Shigeki Sakai
Shinji Migita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Publication of FR2756573A1 publication Critical patent/FR2756573A1/fr
Application granted granted Critical
Publication of FR2756573B1 publication Critical patent/FR2756573B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
FR9714993A 1996-11-29 1997-11-28 Procede de croissance cristalline d'une couche mince d'oxyde a elements multiples contenant du bismuth en tant qu'element constituant Expired - Fee Related FR2756573B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8318974A JP2939530B2 (ja) 1996-11-29 1996-11-29 ビスマスを構成元素に含む多元系酸化物薄膜の結晶成長法

Publications (2)

Publication Number Publication Date
FR2756573A1 FR2756573A1 (fr) 1998-06-05
FR2756573B1 true FR2756573B1 (fr) 2003-09-05

Family

ID=18105082

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9714993A Expired - Fee Related FR2756573B1 (fr) 1996-11-29 1997-11-28 Procede de croissance cristalline d'une couche mince d'oxyde a elements multiples contenant du bismuth en tant qu'element constituant

Country Status (4)

Country Link
US (1) US6071338A (fr)
JP (1) JP2939530B2 (fr)
DE (1) DE19752975A1 (fr)
FR (1) FR2756573B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2958455B1 (ja) * 1998-03-27 1999-10-06 工業技術院長 酸化物薄膜の結晶成長方法
KR100533648B1 (ko) * 2003-03-14 2005-12-06 한국과학기술연구원 Ｂｉ 박막 제조방법 및 Ｂｉ 박막을 이용한 소자
JP4612340B2 (ja) 2003-05-21 2011-01-12 独立行政法人科学技術振興機構 ビスマスを構成元素に含む多元系酸化物単結晶の製造方法
CN101745402B (zh) * 2009-10-22 2013-01-16 中国科学院上海硅酸盐研究所 高比表面基底负载Bi2WO6光催化膜、方法及应用
JP5801772B2 (ja) * 2012-07-23 2015-10-28 日本電信電話株式会社 複合酸化物薄膜組成の制御方法および薄膜成長装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0286014A (ja) * 1988-06-17 1990-03-27 Sumitomo Electric Ind Ltd 複合酸化物超電導薄膜と、その成膜方法
US5118662A (en) * 1989-05-04 1992-06-02 Eastman Kodak Company Article comprising conductive film of crystalline bismuth mixed alkaline earth oxide containing silver
US5189010A (en) * 1990-07-20 1993-02-23 Eastman Kodak Company Process for preparing superconductive thick films
US5434102A (en) * 1991-02-25 1995-07-18 Symetrix Corporation Process for fabricating layered superlattice materials and making electronic devices including same
JPH04285012A (ja) * 1991-03-15 1992-10-09 Fujitsu Ltd 酸化物超伝導体薄膜の形成方法
JPH04292419A (ja) * 1991-03-18 1992-10-16 Fujitsu Ltd 酸化物超伝導体薄膜の形成方法
DE69224214T2 (de) * 1991-06-04 1998-04-30 Matsushita Electric Ind Co Ltd Herstellungsverfahren für Dünnschicht-Supraleiter
JP3037514B2 (ja) * 1992-09-29 2000-04-24 松下電器産業株式会社 薄膜超伝導体及びその製造方法

Also Published As

Publication number Publication date
FR2756573A1 (fr) 1998-06-05
JPH10158094A (ja) 1998-06-16
DE19752975A1 (de) 1998-06-04
JP2939530B2 (ja) 1999-08-25
US6071338A (en) 2000-06-06

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Legal Events

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ST Notification of lapse

Effective date: 20110801