FR2752490B1 - SEMICONDUCTOR MEMORY DEVICE AND CAPACITOR STRUCTURE FOR SUCH DEVICE - Google Patents

SEMICONDUCTOR MEMORY DEVICE AND CAPACITOR STRUCTURE FOR SUCH DEVICE

Info

Publication number
FR2752490B1
FR2752490B1 FR9705115A FR9705115A FR2752490B1 FR 2752490 B1 FR2752490 B1 FR 2752490B1 FR 9705115 A FR9705115 A FR 9705115A FR 9705115 A FR9705115 A FR 9705115A FR 2752490 B1 FR2752490 B1 FR 2752490B1
Authority
FR
France
Prior art keywords
semiconductor memory
capacitor structure
memory device
capacitor
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9705115A
Other languages
French (fr)
Other versions
FR2752490A1 (en
Inventor
Fang Ching Chao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW085110010A external-priority patent/TW308729B/en
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Publication of FR2752490A1 publication Critical patent/FR2752490A1/en
Application granted granted Critical
Publication of FR2752490B1 publication Critical patent/FR2752490B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
FR9705115A 1996-08-16 1997-04-25 SEMICONDUCTOR MEMORY DEVICE AND CAPACITOR STRUCTURE FOR SUCH DEVICE Expired - Fee Related FR2752490B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
TW085110010A TW308729B (en) 1996-08-16 1996-08-16 Semiconductor memory device with capacitor (3)
GB9701923A GB2321771A (en) 1996-08-16 1997-01-30 Stacked capacitor
NL1005628A NL1005628C2 (en) 1996-08-16 1997-03-25 A method of manufacturing a semiconductor memory device.

Publications (2)

Publication Number Publication Date
FR2752490A1 FR2752490A1 (en) 1998-02-20
FR2752490B1 true FR2752490B1 (en) 2001-05-25

Family

ID=27268699

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9705115A Expired - Fee Related FR2752490B1 (en) 1996-08-16 1997-04-25 SEMICONDUCTOR MEMORY DEVICE AND CAPACITOR STRUCTURE FOR SUCH DEVICE

Country Status (5)

Country Link
JP (1) JPH10135428A (en)
DE (1) DE19720227A1 (en)
FR (1) FR2752490B1 (en)
GB (1) GB2321771A (en)
NL (1) NL1005628C2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6025244A (en) * 1997-12-04 2000-02-15 Fujitsu Limited Self-aligned patterns by chemical-mechanical polishing particularly suited to the formation of MCM capacitors
KR100434506B1 (en) 2002-06-27 2004-06-05 삼성전자주식회사 Semiconductor memory device and method for manufacturing the same
GB2410374B (en) * 2002-06-27 2005-11-30 Samsung Electronics Co Ltd Methods for manufacturing semiconductor memory using sidewall spacers

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5164337A (en) * 1989-11-01 1992-11-17 Matsushita Electric Industrial Co., Ltd. Method of fabricating a semiconductor device having a capacitor in a stacked memory cell
JP2504606B2 (en) * 1990-05-18 1996-06-05 株式会社東芝 Semiconductor memory device and manufacturing method thereof
US5240871A (en) * 1991-09-06 1993-08-31 Micron Technology, Inc. Corrugated storage contact capacitor and method for forming a corrugated storage contact capacitor
US5145801A (en) * 1992-02-07 1992-09-08 Micron Technology, Inc. Method of increasing the surface area of a mini-stacked capacitor
JPH05308131A (en) * 1992-04-30 1993-11-19 Sanyo Electric Co Ltd Manufacture of semiconductor storage device
US5330928A (en) * 1992-09-28 1994-07-19 Industrial Technology Research Institute Method for fabricating stacked capacitors with increased capacitance in a DRAM cell
JP2953220B2 (en) * 1992-10-30 1999-09-27 日本電気株式会社 Method for manufacturing semiconductor device
JPH07249690A (en) * 1994-03-14 1995-09-26 Fujitsu Ltd Manufacture of semiconductor device
US5436188A (en) * 1994-04-26 1995-07-25 Industrial Technology Research Institute Dram cell process having elk horn shaped capacitor
KR0154161B1 (en) * 1994-06-30 1998-10-15 김주용 Capacitor fabrication method of semiconducor device

Also Published As

Publication number Publication date
GB2321771A (en) 1998-08-05
NL1005628C2 (en) 1998-09-28
GB9701923D0 (en) 1997-03-19
JPH10135428A (en) 1998-05-22
DE19720227A1 (en) 1998-02-19
FR2752490A1 (en) 1998-02-20

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Legal Events

Date Code Title Description
ST Notification of lapse