FR2752481B1 - METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE HAVING A SHAFT TYPE CAPACITOR - Google Patents

METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE HAVING A SHAFT TYPE CAPACITOR

Info

Publication number
FR2752481B1
FR2752481B1 FR9705112A FR9705112A FR2752481B1 FR 2752481 B1 FR2752481 B1 FR 2752481B1 FR 9705112 A FR9705112 A FR 9705112A FR 9705112 A FR9705112 A FR 9705112A FR 2752481 B1 FR2752481 B1 FR 2752481B1
Authority
FR
France
Prior art keywords
manufacturing
memory device
semiconductor memory
shaft type
type capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9705112A
Other languages
French (fr)
Other versions
FR2752481A1 (en
Inventor
Fang Ching Chao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Microelectronics Corp
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW085110004A external-priority patent/TW312831B/en
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Publication of FR2752481A1 publication Critical patent/FR2752481A1/en
Application granted granted Critical
Publication of FR2752481B1 publication Critical patent/FR2752481B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR9705112A 1996-08-16 1997-04-25 METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE HAVING A SHAFT TYPE CAPACITOR Expired - Fee Related FR2752481B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW085110004A TW312831B (en) 1996-08-16 1996-08-16 Manufacturing method of semiconductor memory device with capacitor(3)
GB9701921A GB2321769A (en) 1996-08-16 1997-01-30 Method of fabricating a stacked capacitor

Publications (2)

Publication Number Publication Date
FR2752481A1 FR2752481A1 (en) 1998-02-20
FR2752481B1 true FR2752481B1 (en) 1999-12-31

Family

ID=26310893

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9705112A Expired - Fee Related FR2752481B1 (en) 1996-08-16 1997-04-25 METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE HAVING A SHAFT TYPE CAPACITOR

Country Status (4)

Country Link
JP (1) JP3024676B2 (en)
DE (1) DE19720219A1 (en)
FR (1) FR2752481B1 (en)
GB (1) GB2321769A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7829410B2 (en) 2007-11-26 2010-11-09 Micron Technology, Inc. Methods of forming capacitors, and methods of forming DRAM arrays

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0321062A (en) * 1989-06-19 1991-01-29 Toshiba Corp Semiconductor storage device
JPH0379072A (en) * 1989-08-22 1991-04-04 Toshiba Corp Semiconductor memory device and manufacturing method
JPH05190508A (en) * 1992-01-14 1993-07-30 Matsushita Electric Ind Co Ltd Thin film etching method and laminated thin film etching method
US5150276A (en) * 1992-01-24 1992-09-22 Micron Technology, Inc. Method of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular rings
JP2953220B2 (en) * 1992-10-30 1999-09-27 日本電気株式会社 Method for manufacturing semiconductor device
US5451537A (en) * 1994-08-12 1995-09-19 Industrial Technology Research Institute Method of forming a DRAM stack capacitor with ladder storage node
JPH08204153A (en) * 1995-01-24 1996-08-09 Sony Corp Manufacture of semiconductor storage device
US5536673A (en) * 1995-07-26 1996-07-16 United Microelectronics Corporation Method for making dynamic random access memory (DRAM) cells having large capacitor electrode plates for increased capacitance

Also Published As

Publication number Publication date
DE19720219A1 (en) 1998-02-19
JPH1079486A (en) 1998-03-24
JP3024676B2 (en) 2000-03-21
GB9701921D0 (en) 1997-03-19
FR2752481A1 (en) 1998-02-20
GB2321769A (en) 1998-08-05

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Legal Events

Date Code Title Description
ST Notification of lapse