FR2752324B1 - Memoire non volatile en circuit-integre a lecture rapide - Google Patents

Memoire non volatile en circuit-integre a lecture rapide

Info

Publication number
FR2752324B1
FR2752324B1 FR9610176A FR9610176A FR2752324B1 FR 2752324 B1 FR2752324 B1 FR 2752324B1 FR 9610176 A FR9610176 A FR 9610176A FR 9610176 A FR9610176 A FR 9610176A FR 2752324 B1 FR2752324 B1 FR 2752324B1
Authority
FR
France
Prior art keywords
fast
integrated circuit
volatile memory
reading integrated
reading
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9610176A
Other languages
English (en)
Other versions
FR2752324A1 (fr
Inventor
Sebastien Zink
David Naura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Priority to FR9610176A priority Critical patent/FR2752324B1/fr
Priority to US08/908,322 priority patent/US5946241A/en
Publication of FR2752324A1 publication Critical patent/FR2752324A1/fr
Application granted granted Critical
Publication of FR2752324B1 publication Critical patent/FR2752324B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
FR9610176A 1996-08-08 1996-08-08 Memoire non volatile en circuit-integre a lecture rapide Expired - Fee Related FR2752324B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR9610176A FR2752324B1 (fr) 1996-08-08 1996-08-08 Memoire non volatile en circuit-integre a lecture rapide
US08/908,322 US5946241A (en) 1996-08-08 1997-08-07 Non-volatile memory in integrated circuit form with fast reading

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9610176A FR2752324B1 (fr) 1996-08-08 1996-08-08 Memoire non volatile en circuit-integre a lecture rapide

Publications (2)

Publication Number Publication Date
FR2752324A1 FR2752324A1 (fr) 1998-02-13
FR2752324B1 true FR2752324B1 (fr) 1998-09-18

Family

ID=9495036

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9610176A Expired - Fee Related FR2752324B1 (fr) 1996-08-08 1996-08-08 Memoire non volatile en circuit-integre a lecture rapide

Country Status (2)

Country Link
US (1) US5946241A (fr)
FR (1) FR2752324B1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1220228B1 (fr) * 2000-12-29 2008-12-24 STMicroelectronics S.r.l. Procédé de programmation pour mémoire non-volatile
US7177183B2 (en) * 2003-09-30 2007-02-13 Sandisk 3D Llc Multiple twin cell non-volatile memory array and logic block structure and method therefor
WO2006129344A1 (fr) * 2005-05-30 2006-12-07 Spansion Llc Dispositif semi-conducteur
FR2888659A1 (fr) * 2005-07-18 2007-01-19 St Microelectronics Sa Amplificateur de lecture pour memoire non volatile
US9117507B2 (en) * 2010-08-09 2015-08-25 Freescale Semiconductor, Inc. Multistage voltage regulator circuit
US9076557B2 (en) * 2012-11-19 2015-07-07 Texas Instruments Incorporated Read margin measurement in a read-only memory
US9786362B1 (en) * 2016-08-26 2017-10-10 Arm Limited Memory circuit and data processing system

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4804871A (en) * 1987-07-28 1989-02-14 Advanced Micro Devices, Inc. Bit-line isolated, CMOS sense amplifier
US5237534A (en) * 1989-04-27 1993-08-17 Kabushiki Kaisha Toshiba Data sense circuit for a semiconductor nonvolatile memory device
US5291045A (en) * 1991-03-29 1994-03-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device using a differential cell in a memory cell
DE69222712T2 (de) * 1991-07-25 1998-02-12 St Microelectronics Srl Leseverstärker für programmierbare Speicher mit einer virtuell verbesserten Signalquelle
FR2694119B1 (fr) * 1992-07-24 1994-08-26 Sgs Thomson Microelectronics Circuit de lecture pour mémoire, avec recharge et équilibrage avant lecture.
FR2714202B1 (fr) * 1993-12-22 1996-01-12 Sgs Thomson Microelectronics Mémoire en circuit intégré à temps de lecture amélioré.
EP0675501B1 (fr) * 1994-03-31 2001-06-13 STMicroelectronics S.r.l. Elément de mémoire non-volatile avec cellule programmable double et circuit de lecture correspondant pour circuits de redondance
US5694356A (en) * 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
KR100218244B1 (ko) * 1995-05-27 1999-09-01 윤종용 불휘발성 반도체 메모리의 데이터 독출회로

Also Published As

Publication number Publication date
US5946241A (en) 1999-08-31
FR2752324A1 (fr) 1998-02-13

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20080430