FR2724162B1 - Procede de preparation de trisilane a partir de monosilane, par decharge electrique et piegeage cryogenique - Google Patents
Procede de preparation de trisilane a partir de monosilane, par decharge electrique et piegeage cryogeniqueInfo
- Publication number
- FR2724162B1 FR2724162B1 FR9410529A FR9410529A FR2724162B1 FR 2724162 B1 FR2724162 B1 FR 2724162B1 FR 9410529 A FR9410529 A FR 9410529A FR 9410529 A FR9410529 A FR 9410529A FR 2724162 B1 FR2724162 B1 FR 2724162B1
- Authority
- FR
- France
- Prior art keywords
- trisilane
- monosilane
- preparation
- electric shock
- cryogenic trap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9410529A FR2724162B1 (fr) | 1994-09-01 | 1994-09-01 | Procede de preparation de trisilane a partir de monosilane, par decharge electrique et piegeage cryogenique |
PCT/FR1995/001093 WO1996006802A1 (fr) | 1994-09-01 | 1995-08-17 | Procede de preparation de trisilane a partir de monosilane |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9410529A FR2724162B1 (fr) | 1994-09-01 | 1994-09-01 | Procede de preparation de trisilane a partir de monosilane, par decharge electrique et piegeage cryogenique |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2724162A1 FR2724162A1 (fr) | 1996-03-08 |
FR2724162B1 true FR2724162B1 (fr) | 1997-01-10 |
Family
ID=9466635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9410529A Expired - Fee Related FR2724162B1 (fr) | 1994-09-01 | 1994-09-01 | Procede de preparation de trisilane a partir de monosilane, par decharge electrique et piegeage cryogenique |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR2724162B1 (fr) |
WO (1) | WO1996006802A1 (fr) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013226033A1 (de) * | 2013-12-16 | 2015-06-18 | Evonik Industries Ag | Verfahren zur Herstellung von hochreinen Halbmetallverbindungen |
DE102020211833A1 (de) | 2020-09-22 | 2022-03-24 | Evonik Operations Gmbh | Verfahren zur Herstellung oligomerer Hydridosilane aus SiH4 |
CN114105148B (zh) * | 2021-12-01 | 2022-08-12 | 全椒亚格泰电子新材料科技有限公司 | 利用等离子球磨裂解合成高阶硅烷的方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61106411A (ja) * | 1984-10-27 | 1986-05-24 | Seitetsu Kagaku Co Ltd | ジシランおよびトリシランの製造法 |
JPS62132721A (ja) * | 1985-12-02 | 1987-06-16 | Fuji Electric Co Ltd | 高次シラン生成方法 |
JPS62132720A (ja) * | 1985-12-02 | 1987-06-16 | Fuji Electric Co Ltd | 高次シラン生成方法 |
-
1994
- 1994-09-01 FR FR9410529A patent/FR2724162B1/fr not_active Expired - Fee Related
-
1995
- 1995-08-17 WO PCT/FR1995/001093 patent/WO1996006802A1/fr active Application Filing
Also Published As
Publication number | Publication date |
---|---|
FR2724162A1 (fr) | 1996-03-08 |
WO1996006802A1 (fr) | 1996-03-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |