FR2680586B1 - Circuit generateur de tension d'alimentation interne programmable electriquement. - Google Patents

Circuit generateur de tension d'alimentation interne programmable electriquement.

Info

Publication number
FR2680586B1
FR2680586B1 FR9209699A FR9209699A FR2680586B1 FR 2680586 B1 FR2680586 B1 FR 2680586B1 FR 9209699 A FR9209699 A FR 9209699A FR 9209699 A FR9209699 A FR 9209699A FR 2680586 B1 FR2680586 B1 FR 2680586B1
Authority
FR
France
Prior art keywords
supply voltage
voltage generator
generator circuit
electrically programmable
internal supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9209699A
Other languages
English (en)
Other versions
FR2680586A1 (fr
Inventor
Yong-Bo Park
Byeong-Yun Kim
Hyung-Kyu Lim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2680586A1 publication Critical patent/FR2680586A1/fr
Application granted granted Critical
Publication of FR2680586B1 publication Critical patent/FR2680586B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/462—Regulating voltage or current wherein the variable actually regulated by the final control device is dc as a function of the requirements of the load, e.g. delay, temperature, specific voltage/current characteristic
    • G05F1/465—Internal voltage generators for integrated circuits, e.g. step down generators
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
FR9209699A 1991-08-19 1992-08-05 Circuit generateur de tension d'alimentation interne programmable electriquement. Expired - Fee Related FR2680586B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR910014295 1991-08-19

Publications (2)

Publication Number Publication Date
FR2680586A1 FR2680586A1 (fr) 1993-02-26
FR2680586B1 true FR2680586B1 (fr) 1994-03-11

Family

ID=19318771

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9209699A Expired - Fee Related FR2680586B1 (fr) 1991-08-19 1992-08-05 Circuit generateur de tension d'alimentation interne programmable electriquement.

Country Status (1)

Country Link
FR (1) FR2680586B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5847591A (en) * 1997-03-31 1998-12-08 Siemens Aktiengesellschaft Voltage detection circuit and internal voltage clamp circuit

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59111514A (ja) * 1982-12-17 1984-06-27 Hitachi Ltd 半導体集積回路
US4482985A (en) * 1981-04-17 1984-11-13 Hitachi, Ltd. Semiconductor integrated circuit
JP2721151B2 (ja) * 1986-04-01 1998-03-04 株式会社東芝 半導体集積回路装置
JP2809768B2 (ja) * 1989-11-30 1998-10-15 株式会社東芝 基準電位発生回路

Also Published As

Publication number Publication date
FR2680586A1 (fr) 1993-02-26

Similar Documents

Publication Publication Date Title
FR2677793B1 (fr) Circuit pour produire une tension d'alimentation interne.
ITMI921964A0 (it) Circuito generatore di tensione di alimentazione interna programmabile elettricamente
GB2262821B (en) Voltage generator
KR930016559U (ko) 워드라인 전압 공급회로
DE68914757D1 (de) Geschaltete Speisespannungsschaltung.
DE69011905D1 (de) Geschaltete Speisespannungsschaltung mit Anlaufschaltung.
DE69415258D1 (de) Hochspannungsversorgungsschaltung
DE69214016D1 (de) Stromversorgungsschaltung
DE68911400D1 (de) Geschaltete Speisespannungsschaltung.
FR2680609B1 (fr) Alimentation electrique escamotable.
DE69626607D1 (de) Halbleiterspeicheranordnung mit Spannungsgeneratorschaltung
FR2743953B1 (fr) Circuit d'alimentation a condensateur de stockage
DE69313244D1 (de) Niederspannungs-Referenzstromgeneratorschaltung
DE69200540D1 (de) Elektrisch programmierbarer integrierter Eintransistorspeicher.
DE69216882D1 (de) Referenz-Spannungsgenerator
DE69214303D1 (de) Konstante Spannungsgeneratorschaltung
DE68918822D1 (de) Integrierte Schaltung mit verminderter Versorgungsspannung.
FR2663183B1 (fr) Circuit d'alimentation de lampes basse tension disposees en serie.
FR2665304B1 (fr) Borne d'alimentation electrique.
FR2680586B1 (fr) Circuit generateur de tension d'alimentation interne programmable electriquement.
DE69019040D1 (de) Geschaltete Speisespannungsschaltung.
FR2688904B1 (fr) Circuit de generation de tension de reference.
DE69005649D1 (de) Spannungsgeneratorschaltung.
DE69209744D1 (de) Hochspannungsgenerator
GB9124287D0 (en) Reference voltage generating circuit

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20110502