FR2675634B1 - - Google Patents
Info
- Publication number
- FR2675634B1 FR2675634B1 FR9104636A FR9104636A FR2675634B1 FR 2675634 B1 FR2675634 B1 FR 2675634B1 FR 9104636 A FR9104636 A FR 9104636A FR 9104636 A FR9104636 A FR 9104636A FR 2675634 B1 FR2675634 B1 FR 2675634B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9104636A FR2675634A1 (fr) | 1991-04-16 | 1991-04-16 | Dispositif optoelectronique a tres faible capacite parasite. |
| DE69205160T DE69205160T2 (de) | 1991-04-16 | 1992-04-15 | Optoelektronische vorrichtung mit einer sehr niedrigen parasitischen kapazitat und verfahren zu ihrer herstellung. |
| JP4509224A JPH06509683A (ja) | 1991-04-16 | 1992-04-15 | 極低浮遊容量を備える光子デバイスとその製造方法 |
| US08/122,610 US5440147A (en) | 1991-04-16 | 1992-04-15 | Optoelectric device having a very low stray capacitance and its production process |
| PCT/FR1992/000338 WO1992019029A1 (fr) | 1991-04-16 | 1992-04-15 | Dispositif optoelectronique a tres faible capacite parasite et son procede de fabrication |
| EP92909766A EP0580717B1 (fr) | 1991-04-16 | 1992-04-15 | Dispositif optoelectronique a tres faible capacite parasite et son procede de fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR9104636A FR2675634A1 (fr) | 1991-04-16 | 1991-04-16 | Dispositif optoelectronique a tres faible capacite parasite. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2675634A1 FR2675634A1 (fr) | 1992-10-23 |
| FR2675634B1 true FR2675634B1 (US07943777-20110517-C00090.png) | 1997-02-28 |
Family
ID=9411884
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9104636A Granted FR2675634A1 (fr) | 1991-04-16 | 1991-04-16 | Dispositif optoelectronique a tres faible capacite parasite. |
Country Status (6)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2288274A (en) * | 1994-03-31 | 1995-10-11 | Sharp Kk | Quantum device and method of making such a device |
| JP2697615B2 (ja) * | 1994-07-07 | 1998-01-14 | 日本電気株式会社 | 多重量子井戸半導体レーザ |
| US5629232A (en) * | 1994-11-14 | 1997-05-13 | The Whitaker Corporation | Method of fabricating semiconductor light emitting devices |
| US5608234A (en) * | 1994-11-14 | 1997-03-04 | The Whitaker Corporation | Semi-insulating edge emitting light emitting diode |
| JPH08148752A (ja) * | 1994-11-22 | 1996-06-07 | Mitsubishi Electric Corp | 半導体レーザ装置の製造方法、及び半導体レーザ装置 |
| DE102011112706B4 (de) * | 2011-09-07 | 2021-09-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59112674A (ja) * | 1982-12-20 | 1984-06-29 | Fujitsu Ltd | 半導体発光装置 |
| JPS59124183A (ja) * | 1982-12-29 | 1984-07-18 | Fujitsu Ltd | 発光半導体装置 |
| JPS59175783A (ja) * | 1983-03-25 | 1984-10-04 | Fujitsu Ltd | 半導体発光装置 |
| EP0321294B1 (en) * | 1987-12-18 | 1995-09-06 | Sharp Kabushiki Kaisha | A semiconductor laser device |
| JPH0744314B2 (ja) * | 1989-07-22 | 1995-05-15 | 住友電気工業株式会社 | 埋め込み型半導体レーザ |
-
1991
- 1991-04-16 FR FR9104636A patent/FR2675634A1/fr active Granted
-
1992
- 1992-04-15 DE DE69205160T patent/DE69205160T2/de not_active Expired - Fee Related
- 1992-04-15 EP EP92909766A patent/EP0580717B1/fr not_active Expired - Lifetime
- 1992-04-15 US US08/122,610 patent/US5440147A/en not_active Expired - Lifetime
- 1992-04-15 WO PCT/FR1992/000338 patent/WO1992019029A1/fr active IP Right Grant
- 1992-04-15 JP JP4509224A patent/JPH06509683A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US5440147A (en) | 1995-08-08 |
| DE69205160D1 (de) | 1995-11-02 |
| EP0580717A1 (fr) | 1994-02-02 |
| JPH06509683A (ja) | 1994-10-27 |
| FR2675634A1 (fr) | 1992-10-23 |
| WO1992019029A1 (fr) | 1992-10-29 |
| EP0580717B1 (fr) | 1995-09-27 |
| DE69205160T2 (de) | 1996-05-02 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| TP | Transmission of property | ||
| ST | Notification of lapse |