FR2675309B1 - - Google Patents
Info
- Publication number
- FR2675309B1 FR2675309B1 FR9202280A FR9202280A FR2675309B1 FR 2675309 B1 FR2675309 B1 FR 2675309B1 FR 9202280 A FR9202280 A FR 9202280A FR 9202280 A FR9202280 A FR 9202280A FR 2675309 B1 FR2675309 B1 FR 2675309B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H10W20/064—
-
- H10P95/00—
-
- H10W20/067—
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE4109535 | 1991-03-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2675309A1 FR2675309A1 (fr) | 1992-10-16 |
| FR2675309B1 true FR2675309B1 (cg-RX-API-DMAC10.html) | 1995-06-02 |
Family
ID=6428027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR9202280A Granted FR2675309A1 (fr) | 1991-03-22 | 1992-02-27 | Procede pour eliminer localement des couches isolantes transparentes aux ultraviolets, situees sur un substrat semiconducteur. |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5338393A (cg-RX-API-DMAC10.html) |
| FR (1) | FR2675309A1 (cg-RX-API-DMAC10.html) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5843363A (en) * | 1995-03-31 | 1998-12-01 | Siemens Aktiengesellschaft | Ablation patterning of multi-layered structures |
| KR0163526B1 (ko) * | 1995-05-17 | 1999-02-01 | 김광호 | 자외선/오존을 조사하여 접속패드에 보호막을 형성하는 단계를 포함하는 반도체소자 제조방법 |
| US6015735A (en) * | 1998-01-13 | 2000-01-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for forming a multi-anchor DRAM capacitor and capacitor formed |
| US9299557B2 (en) | 2014-03-19 | 2016-03-29 | Asm Ip Holding B.V. | Plasma pre-clean module and process |
| US9474163B2 (en) | 2014-12-30 | 2016-10-18 | Asm Ip Holding B.V. | Germanium oxide pre-clean module and process |
| US10373850B2 (en) | 2015-03-11 | 2019-08-06 | Asm Ip Holding B.V. | Pre-clean chamber and process with substrate tray for changing substrate temperature |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6175529A (ja) * | 1984-09-21 | 1986-04-17 | Toshiba Corp | ドライエツチング方法及び装置 |
| JPH0691014B2 (ja) * | 1984-11-14 | 1994-11-14 | 株式会社日立製作所 | 半導体装置の製造装置 |
| JPH0763064B2 (ja) * | 1986-03-31 | 1995-07-05 | 株式会社日立製作所 | Ｉｃ素子における配線接続方法 |
| US4885047A (en) * | 1986-08-11 | 1989-12-05 | Fusion Systems Corporation | Apparatus for photoresist stripping |
| FR2620737B1 (fr) * | 1987-09-17 | 1993-04-16 | France Etat | Procede de gravure d'une couche d'oxyde de silicium |
| US5104694A (en) * | 1989-04-21 | 1992-04-14 | Nippon Telephone & Telegraph Corporation | Selective chemical vapor deposition of a metallic film on the silicon surface |
-
1992
- 1992-02-27 FR FR9202280A patent/FR2675309A1/fr active Granted
- 1992-03-17 US US07/852,952 patent/US5338393A/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5338393A (en) | 1994-08-16 |
| FR2675309A1 (fr) | 1992-10-16 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |