FR2617637B1 - METHOD FOR CONTROLLING THE CONDUCTION STATE OF A MOS TRANSISTOR AND INTEGRATED CIRCUIT IMPLEMENTING THE METHOD - Google Patents

METHOD FOR CONTROLLING THE CONDUCTION STATE OF A MOS TRANSISTOR AND INTEGRATED CIRCUIT IMPLEMENTING THE METHOD

Info

Publication number
FR2617637B1
FR2617637B1 FR8709381A FR8709381A FR2617637B1 FR 2617637 B1 FR2617637 B1 FR 2617637B1 FR 8709381 A FR8709381 A FR 8709381A FR 8709381 A FR8709381 A FR 8709381A FR 2617637 B1 FR2617637 B1 FR 2617637B1
Authority
FR
France
Prior art keywords
controlling
integrated circuit
mos transistor
conduction state
circuit implementing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8709381A
Other languages
French (fr)
Other versions
FR2617637A1 (en
Inventor
Alain Boudou
Marie-Francoise Bonnal
Martine Rouillon-Martin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bull SA
Original Assignee
Bull SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bull SA filed Critical Bull SA
Priority to FR8709381A priority Critical patent/FR2617637B1/en
Priority to ES88401626T priority patent/ES2097109T3/en
Priority to EP88401626A priority patent/EP0298829B1/en
Priority to DE3855682T priority patent/DE3855682D1/en
Priority to JP63164796A priority patent/JPH0821635B2/en
Publication of FR2617637A1 publication Critical patent/FR2617637A1/en
Application granted granted Critical
Publication of FR2617637B1 publication Critical patent/FR2617637B1/en
Priority to US07/658,465 priority patent/US5281553A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H01L23/5254—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
FR8709381A 1987-07-02 1987-07-02 METHOD FOR CONTROLLING THE CONDUCTION STATE OF A MOS TRANSISTOR AND INTEGRATED CIRCUIT IMPLEMENTING THE METHOD Expired FR2617637B1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR8709381A FR2617637B1 (en) 1987-07-02 1987-07-02 METHOD FOR CONTROLLING THE CONDUCTION STATE OF A MOS TRANSISTOR AND INTEGRATED CIRCUIT IMPLEMENTING THE METHOD
ES88401626T ES2097109T3 (en) 1987-07-02 1988-06-27 CONTROL PROCEDURE OF THE CONDUCTING STATE OF A MOS TRANSISTOR.
EP88401626A EP0298829B1 (en) 1987-07-02 1988-06-27 Process to control the conduction state of a MOS transistor
DE3855682T DE3855682D1 (en) 1987-07-02 1988-06-27 Method for setting the conduction state of a MOS transistor
JP63164796A JPH0821635B2 (en) 1987-07-02 1988-07-01 Method for controlling conduction state of MOS transistor and integrated circuit obtained by implementing the method
US07/658,465 US5281553A (en) 1987-07-02 1991-02-22 Method for controlling the state of conduction of an MOS transistor of an integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8709381A FR2617637B1 (en) 1987-07-02 1987-07-02 METHOD FOR CONTROLLING THE CONDUCTION STATE OF A MOS TRANSISTOR AND INTEGRATED CIRCUIT IMPLEMENTING THE METHOD

Publications (2)

Publication Number Publication Date
FR2617637A1 FR2617637A1 (en) 1989-01-06
FR2617637B1 true FR2617637B1 (en) 1989-10-27

Family

ID=9352793

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8709381A Expired FR2617637B1 (en) 1987-07-02 1987-07-02 METHOD FOR CONTROLLING THE CONDUCTION STATE OF A MOS TRANSISTOR AND INTEGRATED CIRCUIT IMPLEMENTING THE METHOD

Country Status (5)

Country Link
EP (1) EP0298829B1 (en)
JP (1) JPH0821635B2 (en)
DE (1) DE3855682D1 (en)
ES (1) ES2097109T3 (en)
FR (1) FR2617637B1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2659171A1 (en) * 1990-03-02 1991-09-06 Thomson Csf ELECTRIC CIRCUIT FOR HYPERFREQUENCY COMPRISING A POLYMER LAYER.
JP2587323B2 (en) * 1990-12-25 1997-03-05 小糸工業株式会社 Seat headrest
GB2270795B (en) * 1992-09-18 1995-02-15 Texas Instruments Ltd Improvements in or relating to the trimming of integrated circuits
US7668125B2 (en) 2003-09-09 2010-02-23 Qualcomm Incorporated Incremental redundancy transmission for multiple parallel channels in a MIMO communication system

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4952980A (en) * 1972-09-22 1974-05-23
US4387503A (en) * 1981-08-13 1983-06-14 Mostek Corporation Method for programming circuit elements in integrated circuits
US4583201A (en) * 1983-09-08 1986-04-15 International Business Machines Corporation Resistor personalized memory device using a resistive gate fet
JPS6146045A (en) * 1984-08-10 1986-03-06 Hitachi Ltd Semiconductor device
FR2601500B1 (en) * 1986-07-11 1988-10-21 Bull Sa LASER PROGRAMMABLE LINKING METHOD OF TWO SUPERIMPOSED CONDUCTORS OF THE INTERCONNECTION NETWORK OF AN INTEGRATED CIRCUIT, AND INTEGRATED CIRCUIT THEREFROM

Also Published As

Publication number Publication date
ES2097109T3 (en) 1997-04-01
FR2617637A1 (en) 1989-01-06
JPS6435949A (en) 1989-02-07
DE3855682D1 (en) 1997-01-09
EP0298829A1 (en) 1989-01-11
EP0298829B1 (en) 1996-11-27
JPH0821635B2 (en) 1996-03-04

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Legal Events

Date Code Title Description
ST Notification of lapse