FR2606552B1 - Composant a semi-conducteur resistant aux rayonnements - Google Patents

Composant a semi-conducteur resistant aux rayonnements

Info

Publication number
FR2606552B1
FR2606552B1 FR8708008A FR8708008A FR2606552B1 FR 2606552 B1 FR2606552 B1 FR 2606552B1 FR 8708008 A FR8708008 A FR 8708008A FR 8708008 A FR8708008 A FR 8708008A FR 2606552 B1 FR2606552 B1 FR 2606552B1
Authority
FR
France
Prior art keywords
semiconductor component
radiation resistant
resistant semiconductor
radiation
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8708008A
Other languages
English (en)
Other versions
FR2606552A1 (fr
Inventor
Kamal Tabatabaie-Alavi
Bruce W Black
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of FR2606552A1 publication Critical patent/FR2606552A1/fr
Application granted granted Critical
Publication of FR2606552B1 publication Critical patent/FR2606552B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Semiconductor Memories (AREA)
FR8708008A 1986-06-11 1987-06-09 Composant a semi-conducteur resistant aux rayonnements Expired - Fee Related FR2606552B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87298486A 1986-06-11 1986-06-11

Publications (2)

Publication Number Publication Date
FR2606552A1 FR2606552A1 (fr) 1988-05-13
FR2606552B1 true FR2606552B1 (fr) 1991-08-23

Family

ID=25360747

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8708008A Expired - Fee Related FR2606552B1 (fr) 1986-06-11 1987-06-09 Composant a semi-conducteur resistant aux rayonnements

Country Status (4)

Country Link
JP (1) JPS62298177A (fr)
DE (1) DE3719535A1 (fr)
FR (1) FR2606552B1 (fr)
GB (1) GB2191633B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01253957A (ja) * 1988-04-04 1989-10-11 Agency Of Ind Science & Technol ガリウム砒素半導体メモリ集積回路
FR2667442B1 (fr) * 1989-10-23 1995-02-10 Commissariat Energie Atomique Semi-conducteurs pour composants microelectroniques a haute resistance contre les radiations ionisantes.
TWI261892B (en) 2001-11-05 2006-09-11 Zycube Co Ltd Semiconductor device using low-k material and method of fabricating the same
CN111291480B (zh) * 2020-01-21 2024-10-18 中国科学院微电子研究所 一种mos器件剂量率模型的建模方法和装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4247862B1 (en) * 1977-08-26 1995-12-26 Intel Corp Ionzation resistant mos structure
US4163237A (en) * 1978-04-24 1979-07-31 Bell Telephone Laboratories, Incorporated High mobility multilayered heterojunction devices employing modulated doping
IT1149814B (it) * 1979-11-26 1986-12-10 Ibm Struttura semiconduttrice
JPS58107679A (ja) * 1981-12-21 1983-06-27 Mitsubishi Electric Corp 電界効果トランジスタ
US4578127A (en) * 1982-08-13 1986-03-25 At&T Bell Laboratories Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer
JPS5963769A (ja) * 1982-10-05 1984-04-11 Agency Of Ind Science & Technol 高速半導体素子
JPS61289673A (ja) * 1985-06-18 1986-12-19 Sumitomo Electric Ind Ltd 化合物半導体装置

Also Published As

Publication number Publication date
DE3719535A1 (de) 1988-01-28
FR2606552A1 (fr) 1988-05-13
GB8713523D0 (en) 1987-07-15
GB2191633A (en) 1987-12-16
GB2191633B (en) 1990-02-14
JPS62298177A (ja) 1987-12-25

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Legal Events

Date Code Title Description
ST Notification of lapse