FR2592245A1 - Etage a gain en courant a faible chute de potentiel. - Google Patents

Etage a gain en courant a faible chute de potentiel.

Info

Publication number
FR2592245A1
FR2592245A1 FR8617975A FR8617975A FR2592245A1 FR 2592245 A1 FR2592245 A1 FR 2592245A1 FR 8617975 A FR8617975 A FR 8617975A FR 8617975 A FR8617975 A FR 8617975A FR 2592245 A1 FR2592245 A1 FR 2592245A1
Authority
FR
France
Prior art keywords
current
low potential
potential loss
gain stage
gain current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8617975A
Other languages
English (en)
Other versions
FR2592245B1 (fr
Inventor
Pietro Menniti
Antonella Lanati
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of FR2592245A1 publication Critical patent/FR2592245A1/fr
Application granted granted Critical
Publication of FR2592245B1 publication Critical patent/FR2592245B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/3432—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors
    • H03F3/3435—DC amplifiers in which all stages are DC-coupled with semiconductor devices only with bipolar transistors using Darlington amplifiers

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

Il est décrit un étage T1, T2 à gain en courant à faible chute de potentiel utilisable à la place d'un étage à gain en courant du type Darlington et qui, d'autre part, conserve les caractéristiques de précision de la valeur du courant de sortie bien que présentant une faible chute de potentiel. L'étage envisage la liaison du collecteur du transistor d'entrée T1 (pilote) avec un miroir de courant dont le courant de sortie est ajouté au courant de sortie de l'étage à gain pour conserver une grande précision. (CF DESSIN DANS BOPI)
FR868617975A 1985-12-23 1986-12-22 Etage a gain en courant a faible chute de potentiel. Expired - Lifetime FR2592245B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23363/85A IT1200915B (it) 1985-12-23 1985-12-23 Stadio di amplificazione di corrente a bassa caduta di tensione

Publications (2)

Publication Number Publication Date
FR2592245A1 true FR2592245A1 (fr) 1987-06-26
FR2592245B1 FR2592245B1 (fr) 1991-08-16

Family

ID=11206425

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868617975A Expired - Lifetime FR2592245B1 (fr) 1985-12-23 1986-12-22 Etage a gain en courant a faible chute de potentiel.

Country Status (4)

Country Link
US (1) US4733196A (fr)
DE (1) DE3643573C2 (fr)
FR (1) FR2592245B1 (fr)
IT (1) IT1200915B (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4904922B1 (en) * 1985-03-21 1992-09-01 Apparatus for converting between digital and analog values
IT1198275B (it) * 1986-12-30 1988-12-21 Sgs Microelettronica Spa Transistore di potenza con miglioramento della resistenza alla rottura secondaria diretta
US5498952A (en) * 1991-09-30 1996-03-12 Sgs-Thomson Microelectronics, S.A. Precise current generator
US5444361A (en) * 1992-09-23 1995-08-22 Sgs-Thomson Microelectronics, Inc. Wideband linear and logarithmic signal conversion circuits
US5451859A (en) * 1991-09-30 1995-09-19 Sgs-Thomson Microelectronics, Inc. Linear transconductors
US5471132A (en) * 1991-09-30 1995-11-28 Sgs-Thomson Microelectronics, Inc. Logarithmic and exponential converter circuits
US5825167A (en) * 1992-09-23 1998-10-20 Sgs-Thomson Microelectronics, Inc. Linear transconductors
US5512815A (en) * 1994-05-09 1996-04-30 National Semiconductor Corporation Current mirror circuit with current-compensated, high impedance output
EP0742590A3 (fr) * 1995-05-11 1999-11-17 Harris Corporation Méthode et circuit pour éviter une polarisation en direct d'une diode parasitaire dans un circuit intégré
US6154018A (en) * 1999-09-01 2000-11-28 Vlsi Technology, Inc. High differential impedance load device
US7053699B2 (en) * 2004-05-11 2006-05-30 Elantec Semiconductor, Inc. Current output stages
JP2013211618A (ja) * 2012-03-30 2013-10-10 Nippon Telegr & Teleph Corp <Ntt> 複合トランジスタ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3371283A (en) * 1962-12-20 1968-02-27 Int Standard Electric Corp Electrical circuits
FR2071779A5 (fr) * 1969-12-11 1971-09-17 Ibm
US4467289A (en) * 1979-11-05 1984-08-21 Sony Corporation Current mirror circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3891935A (en) * 1973-09-21 1975-06-24 Rca Corp Transistor biasing arrangement
US4420725A (en) * 1978-12-27 1983-12-13 Pioneer Electronic Corporation Wide-bandwidth low-distortion amplifier
DE3036736C2 (de) * 1980-09-29 1982-10-21 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur belastungsproportionalen Einstellung des Ansteuerstroms eines in Emitterschaltung betriebenen Eintakt-Endstufentransistors eines Transistorverstärkers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3371283A (en) * 1962-12-20 1968-02-27 Int Standard Electric Corp Electrical circuits
FR2071779A5 (fr) * 1969-12-11 1971-09-17 Ibm
US4467289A (en) * 1979-11-05 1984-08-21 Sony Corporation Current mirror circuit

Also Published As

Publication number Publication date
DE3643573A1 (de) 1987-07-02
US4733196A (en) 1988-03-22
IT8523363A0 (it) 1985-12-23
IT1200915B (it) 1989-01-27
FR2592245B1 (fr) 1991-08-16
DE3643573C2 (de) 1995-11-09

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Legal Events

Date Code Title Description
D6 Patent endorsed licences of rights
ST Notification of lapse