FR2592226A1 - INTEGRATED SCHOTTKY DIODE - Google Patents

INTEGRATED SCHOTTKY DIODE

Info

Publication number
FR2592226A1
FR2592226A1 FR8617976A FR8617976A FR2592226A1 FR 2592226 A1 FR2592226 A1 FR 2592226A1 FR 8617976 A FR8617976 A FR 8617976A FR 8617976 A FR8617976 A FR 8617976A FR 2592226 A1 FR2592226 A1 FR 2592226A1
Authority
FR
France
Prior art keywords
diode
region
schottky diode
integrated schottky
buried layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR8617976A
Other languages
French (fr)
Inventor
Franco Bertotti
Paolo Ferrari
Flavio Villa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
SGS Microelettronica SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Microelettronica SpA filed Critical SGS Microelettronica SpA
Publication of FR2592226A1 publication Critical patent/FR2592226A1/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Abstract

Cette diode Schottky intégrée ayant une structure améliorée comporte une couche enterrée 10 de phosphore autour d'une couche enterrée 5 d'antimoine pour réduire la résistance du chemin des porteurs majoritaires sous des conditions de polarisation en sens direct et pour augmenter la charge dans la région de base, c'est-à-dire dans la région de la couche épitaxiale correspondant à la région de base du transistor parasite PNP qui devient passant durant la polarisation en sens direct de la diode, avec pour résultat d'améliorer les caractéristiques de chute de tension directe et de courant de fuite vers le substrat 3 de la diode. (CF DESSIN DANS BOPI)This integrated Schottky diode having an improved structure has a buried layer 10 of phosphorus around a buried layer 5 of antimony to reduce the path resistance of the majority carriers under forward bias conditions and to increase the charge in the region. base, i.e. in the region of the epitaxial layer corresponding to the base region of the PNP parasitic transistor which turns on during forward bias of the diode, resulting in improved drop characteristics forward voltage and leakage current to the substrate 3 of the diode. (CF DRAWING IN BOPI)

FR8617976A 1985-12-23 1986-12-22 INTEGRATED SCHOTTKY DIODE Withdrawn FR2592226A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23364/85A IT1186490B (en) 1985-12-23 1985-12-23 INTEGRATED SCHOTTKY DIODE

Publications (1)

Publication Number Publication Date
FR2592226A1 true FR2592226A1 (en) 1987-06-26

Family

ID=11206434

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8617976A Withdrawn FR2592226A1 (en) 1985-12-23 1986-12-22 INTEGRATED SCHOTTKY DIODE

Country Status (4)

Country Link
DE (1) DE3644253A1 (en)
FR (1) FR2592226A1 (en)
GB (1) GB2184599B (en)
IT (1) IT1186490B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0310351B1 (en) * 1987-09-30 1993-07-14 Texas Instruments Incorporated Static memory using schottky technology
FR2689317B1 (en) * 1992-03-26 1994-06-17 Sgs Thomson Microelectronics INTEGRATED CIRCUIT CONSTITUTING A NETWORK OF PROTECTION DIODES.
DE19616605C2 (en) * 1996-04-25 1998-03-26 Siemens Ag Schottky diode arrangement and method of manufacture
US7528459B2 (en) * 2003-05-27 2009-05-05 Nxp B.V. Punch-through diode and method of processing the same
WO2010028171A1 (en) * 2008-09-04 2010-03-11 Monolithic Power Systems, Inc. Low leakage and/or low turn-on voltage schottky diode
CN101656272B (en) * 2009-07-22 2011-08-03 上海宏力半导体制造有限公司 Schottky diode and fabricating method thereof
CN113013259A (en) * 2021-02-26 2021-06-22 西安微电子技术研究所 Low-conduction-voltage-drop Schottky diode structure and preparation method thereof
CN114709254B (en) * 2022-04-01 2023-03-21 无锡友达电子有限公司 High-voltage parallel diode structure with composite buried layer and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1306817A (en) * 1969-11-10 1973-02-14 Ibm Semiconductor devices
JPS55141763A (en) * 1979-04-23 1980-11-05 Hitachi Ltd Schottky barrier diode and fabricating method of the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1306817A (en) * 1969-11-10 1973-02-14 Ibm Semiconductor devices
JPS55141763A (en) * 1979-04-23 1980-11-05 Hitachi Ltd Schottky barrier diode and fabricating method of the same

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN. vol. 20, no. 8, janvier 1978, NEW YORK US pages 3127 - 3128; R.Levi: "Reactive ion etch technique for reducing series resistance in large-scale integrated devices" *
IEEE TRANSACTIONS ON ELECTRON DEVICES. vol. ed-31, no. 10, octobre 1984, NEW YORK US pages 1482 - 1486; C.T.Chung et al.: "A Schottky-barrier diode with self-aligned floating guard ring" *
PATENT ABSTRACTS OF JAPAN vol. 5, no. 11 (E-42)(683) 23 janvier 1981, & JP-A-55 141763 (HITACHI) 05 novembre 1980, *
SOLID STATE ELECTRONICS. vol. 20, 1977, OXFORD GB pages 499 - 506; A.Rusu et al.: "The metal-overlap laterally-diffused (mold) Schottky diode" *

Also Published As

Publication number Publication date
IT1186490B (en) 1987-11-26
IT8523364A0 (en) 1985-12-23
GB2184599A (en) 1987-06-24
GB8628416D0 (en) 1986-12-31
DE3644253A1 (en) 1987-06-25
GB2184599B (en) 1989-12-06

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Legal Events

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