FR2578682B1 - Procede et appareil d'attaque au plasma - Google Patents

Procede et appareil d'attaque au plasma

Info

Publication number
FR2578682B1
FR2578682B1 FR8603349A FR8603349A FR2578682B1 FR 2578682 B1 FR2578682 B1 FR 2578682B1 FR 8603349 A FR8603349 A FR 8603349A FR 8603349 A FR8603349 A FR 8603349A FR 2578682 B1 FR2578682 B1 FR 2578682B1
Authority
FR
France
Prior art keywords
attack method
plasma attack
plasma
attack
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8603349A
Other languages
English (en)
Other versions
FR2578682A1 (fr
Inventor
Richard F Landau
Henry A Majewski
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers AG filed Critical Balzers AG
Publication of FR2578682A1 publication Critical patent/FR2578682A1/fr
Application granted granted Critical
Publication of FR2578682B1 publication Critical patent/FR2578682B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
    • H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
    • H01L21/145—Ageing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Gerontology & Geriatric Medicine (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
FR8603349A 1985-03-11 1986-03-10 Procede et appareil d'attaque au plasma Expired FR2578682B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/710,618 US4595452A (en) 1985-03-11 1985-03-11 Method and apparatus for plasma etching

Publications (2)

Publication Number Publication Date
FR2578682A1 FR2578682A1 (fr) 1986-09-12
FR2578682B1 true FR2578682B1 (fr) 1988-02-26

Family

ID=24854810

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8603349A Expired FR2578682B1 (fr) 1985-03-11 1986-03-10 Procede et appareil d'attaque au plasma

Country Status (8)

Country Link
US (1) US4595452A (fr)
JP (1) JPS61234037A (fr)
KR (1) KR860007717A (fr)
DE (1) DE3607844A1 (fr)
FR (1) FR2578682B1 (fr)
GB (1) GB2173155A (fr)
IT (1) IT1188563B (fr)
NL (1) NL8600636A (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689112A (en) * 1985-05-17 1987-08-25 Emergent Technologies Corporation Method and apparatus for dry processing of substrates
JPH0697676B2 (ja) * 1985-11-26 1994-11-30 忠弘 大見 ウエハサセプタ装置
US4678540A (en) * 1986-06-09 1987-07-07 Tegal Corporation Plasma etch process
FR2610140B1 (fr) * 1987-01-26 1990-04-20 Commissariat Energie Atomique Circuit integre cmos et procede de fabrication de ses zones d'isolation electrique
US4780169A (en) * 1987-05-11 1988-10-25 Tegal Corporation Non-uniform gas inlet for dry etching apparatus
US4758306A (en) * 1987-08-17 1988-07-19 International Business Machines Corporation Stud formation method optimizing insulator gap-fill and metal hole-fill
DE3742258C2 (de) * 1987-12-12 1993-12-02 Daimler Benz Ag Kraftstoffbehälter
US5213659A (en) * 1990-06-20 1993-05-25 Micron Technology, Inc. Combination usage of noble gases for dry etching semiconductor wafers
JP2913936B2 (ja) * 1991-10-08 1999-06-28 日本電気株式会社 半導体装置の製造方法
US5444013A (en) * 1994-11-02 1995-08-22 Micron Technology, Inc. Method of forming a capacitor
US5730835A (en) * 1996-01-31 1998-03-24 Micron Technology, Inc. Facet etch for improved step coverage of integrated circuit contacts
US5996528A (en) * 1996-07-02 1999-12-07 Novellus Systems, Inc. Method and apparatus for flowing gases into a manifold at high potential
US5893757A (en) * 1997-01-13 1999-04-13 Applied Komatsu Technology, Inc. Tapered profile etching method
US6074953A (en) * 1998-08-28 2000-06-13 Micron Technology, Inc. Dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers
US6423626B1 (en) 1998-11-02 2002-07-23 Micron Technology, Inc. Removal of metal cusp for improved contact fill
KR100813335B1 (ko) * 2004-11-12 2008-03-12 비오이 하이디스 테크놀로지 주식회사 건식 식각챔버
JP4654738B2 (ja) * 2005-04-05 2011-03-23 パナソニック株式会社 プラズマ処理装置
US20060237137A1 (en) * 2005-04-21 2006-10-26 Shao-Chi Chang Semiconductor apparatus capable of reducing outgassing pollution and method of achieving the same
US8383001B2 (en) * 2009-02-20 2013-02-26 Tokyo Electron Limited Plasma etching method, plasma etching apparatus and storage medium

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4119881A (en) * 1978-02-27 1978-10-10 Control Data Corporation Ion beam generator having concentrically arranged frustoconical accelerating grids
JPS55108742A (en) * 1979-02-14 1980-08-21 Nec Corp Forming method of minute pattern
US4270999A (en) * 1979-09-28 1981-06-02 International Business Machines Corporation Method and apparatus for gas feed control in a dry etching process
US4328081A (en) * 1980-02-25 1982-05-04 Micro-Plate, Inc. Plasma desmearing apparatus and method
US4367114A (en) * 1981-05-06 1983-01-04 The Perkin-Elmer Corporation High speed plasma etching system
JPS5833834A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd プラズマスパツタエツチング装置
JPS58170536A (ja) * 1982-03-31 1983-10-07 Fujitsu Ltd プラズマ処理方法及びその装置
JPS5919325A (ja) * 1982-07-23 1984-01-31 Hitachi Ltd エツチング方法

Also Published As

Publication number Publication date
IT1188563B (it) 1988-01-20
JPS61234037A (ja) 1986-10-18
NL8600636A (nl) 1986-10-01
GB8605703D0 (en) 1986-04-16
GB2173155A (en) 1986-10-08
IT8619641A0 (it) 1986-03-05
FR2578682A1 (fr) 1986-09-12
IT8619641A1 (it) 1987-09-05
US4595452A (en) 1986-06-17
KR860007717A (ko) 1986-10-15
DE3607844A1 (de) 1986-09-18

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Legal Events

Date Code Title Description
ST Notification of lapse