FR2578682B1 - Procede et appareil d'attaque au plasma - Google Patents
Procede et appareil d'attaque au plasmaInfo
- Publication number
- FR2578682B1 FR2578682B1 FR8603349A FR8603349A FR2578682B1 FR 2578682 B1 FR2578682 B1 FR 2578682B1 FR 8603349 A FR8603349 A FR 8603349A FR 8603349 A FR8603349 A FR 8603349A FR 2578682 B1 FR2578682 B1 FR 2578682B1
- Authority
- FR
- France
- Prior art keywords
- attack method
- plasma attack
- plasma
- attack
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/06—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials
- H01L21/14—Treatment of the complete device, e.g. by electroforming to form a barrier
- H01L21/145—Ageing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Gerontology & Geriatric Medicine (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/710,618 US4595452A (en) | 1985-03-11 | 1985-03-11 | Method and apparatus for plasma etching |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2578682A1 FR2578682A1 (fr) | 1986-09-12 |
FR2578682B1 true FR2578682B1 (fr) | 1988-02-26 |
Family
ID=24854810
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8603349A Expired FR2578682B1 (fr) | 1985-03-11 | 1986-03-10 | Procede et appareil d'attaque au plasma |
Country Status (8)
Country | Link |
---|---|
US (1) | US4595452A (fr) |
JP (1) | JPS61234037A (fr) |
KR (1) | KR860007717A (fr) |
DE (1) | DE3607844A1 (fr) |
FR (1) | FR2578682B1 (fr) |
GB (1) | GB2173155A (fr) |
IT (1) | IT1188563B (fr) |
NL (1) | NL8600636A (fr) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4689112A (en) * | 1985-05-17 | 1987-08-25 | Emergent Technologies Corporation | Method and apparatus for dry processing of substrates |
JPH0697676B2 (ja) * | 1985-11-26 | 1994-11-30 | 忠弘 大見 | ウエハサセプタ装置 |
US4678540A (en) * | 1986-06-09 | 1987-07-07 | Tegal Corporation | Plasma etch process |
FR2610140B1 (fr) * | 1987-01-26 | 1990-04-20 | Commissariat Energie Atomique | Circuit integre cmos et procede de fabrication de ses zones d'isolation electrique |
US4780169A (en) * | 1987-05-11 | 1988-10-25 | Tegal Corporation | Non-uniform gas inlet for dry etching apparatus |
US4758306A (en) * | 1987-08-17 | 1988-07-19 | International Business Machines Corporation | Stud formation method optimizing insulator gap-fill and metal hole-fill |
DE3742258C2 (de) * | 1987-12-12 | 1993-12-02 | Daimler Benz Ag | Kraftstoffbehälter |
US5213659A (en) * | 1990-06-20 | 1993-05-25 | Micron Technology, Inc. | Combination usage of noble gases for dry etching semiconductor wafers |
JP2913936B2 (ja) * | 1991-10-08 | 1999-06-28 | 日本電気株式会社 | 半導体装置の製造方法 |
US5444013A (en) * | 1994-11-02 | 1995-08-22 | Micron Technology, Inc. | Method of forming a capacitor |
US5730835A (en) * | 1996-01-31 | 1998-03-24 | Micron Technology, Inc. | Facet etch for improved step coverage of integrated circuit contacts |
US5996528A (en) * | 1996-07-02 | 1999-12-07 | Novellus Systems, Inc. | Method and apparatus for flowing gases into a manifold at high potential |
US5893757A (en) * | 1997-01-13 | 1999-04-13 | Applied Komatsu Technology, Inc. | Tapered profile etching method |
US6074953A (en) * | 1998-08-28 | 2000-06-13 | Micron Technology, Inc. | Dual-source plasma etchers, dual-source plasma etching methods, and methods of forming planar coil dual-source plasma etchers |
US6423626B1 (en) | 1998-11-02 | 2002-07-23 | Micron Technology, Inc. | Removal of metal cusp for improved contact fill |
KR100813335B1 (ko) * | 2004-11-12 | 2008-03-12 | 비오이 하이디스 테크놀로지 주식회사 | 건식 식각챔버 |
JP4654738B2 (ja) * | 2005-04-05 | 2011-03-23 | パナソニック株式会社 | プラズマ処理装置 |
US20060237137A1 (en) * | 2005-04-21 | 2006-10-26 | Shao-Chi Chang | Semiconductor apparatus capable of reducing outgassing pollution and method of achieving the same |
US8383001B2 (en) * | 2009-02-20 | 2013-02-26 | Tokyo Electron Limited | Plasma etching method, plasma etching apparatus and storage medium |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4119881A (en) * | 1978-02-27 | 1978-10-10 | Control Data Corporation | Ion beam generator having concentrically arranged frustoconical accelerating grids |
JPS55108742A (en) * | 1979-02-14 | 1980-08-21 | Nec Corp | Forming method of minute pattern |
US4270999A (en) * | 1979-09-28 | 1981-06-02 | International Business Machines Corporation | Method and apparatus for gas feed control in a dry etching process |
US4328081A (en) * | 1980-02-25 | 1982-05-04 | Micro-Plate, Inc. | Plasma desmearing apparatus and method |
US4367114A (en) * | 1981-05-06 | 1983-01-04 | The Perkin-Elmer Corporation | High speed plasma etching system |
JPS5833834A (ja) * | 1981-08-24 | 1983-02-28 | Hitachi Ltd | プラズマスパツタエツチング装置 |
JPS58170536A (ja) * | 1982-03-31 | 1983-10-07 | Fujitsu Ltd | プラズマ処理方法及びその装置 |
JPS5919325A (ja) * | 1982-07-23 | 1984-01-31 | Hitachi Ltd | エツチング方法 |
-
1985
- 1985-03-11 US US06/710,618 patent/US4595452A/en not_active Expired - Fee Related
-
1986
- 1986-03-05 IT IT19641/86A patent/IT1188563B/it active
- 1986-03-06 KR KR1019860001602A patent/KR860007717A/ko not_active Application Discontinuation
- 1986-03-07 GB GB08605703A patent/GB2173155A/en not_active Withdrawn
- 1986-03-07 JP JP61050257A patent/JPS61234037A/ja active Pending
- 1986-03-10 FR FR8603349A patent/FR2578682B1/fr not_active Expired
- 1986-03-10 DE DE19863607844 patent/DE3607844A1/de not_active Withdrawn
- 1986-03-11 NL NL8600636A patent/NL8600636A/nl not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
IT1188563B (it) | 1988-01-20 |
JPS61234037A (ja) | 1986-10-18 |
NL8600636A (nl) | 1986-10-01 |
GB8605703D0 (en) | 1986-04-16 |
GB2173155A (en) | 1986-10-08 |
IT8619641A0 (it) | 1986-03-05 |
FR2578682A1 (fr) | 1986-09-12 |
IT8619641A1 (it) | 1987-09-05 |
US4595452A (en) | 1986-06-17 |
KR860007717A (ko) | 1986-10-15 |
DE3607844A1 (de) | 1986-09-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |