FR2575334B1 - Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir - Google Patents

Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir

Info

Publication number
FR2575334B1
FR2575334B1 FR8419655A FR8419655A FR2575334B1 FR 2575334 B1 FR2575334 B1 FR 2575334B1 FR 8419655 A FR8419655 A FR 8419655A FR 8419655 A FR8419655 A FR 8419655A FR 2575334 B1 FR2575334 B1 FR 2575334B1
Authority
FR
France
Prior art keywords
obtaining
same
source regions
mos device
parallel strips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8419655A
Other languages
English (en)
Other versions
FR2575334A1 (fr
Inventor
Jean-Claude Vallee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8419655A priority Critical patent/FR2575334B1/fr
Publication of FR2575334A1 publication Critical patent/FR2575334A1/fr
Application granted granted Critical
Publication of FR2575334B1 publication Critical patent/FR2575334B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
FR8419655A 1984-12-21 1984-12-21 Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir Expired FR2575334B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8419655A FR2575334B1 (fr) 1984-12-21 1984-12-21 Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8419655A FR2575334B1 (fr) 1984-12-21 1984-12-21 Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir

Publications (2)

Publication Number Publication Date
FR2575334A1 FR2575334A1 (fr) 1986-06-27
FR2575334B1 true FR2575334B1 (fr) 1987-01-23

Family

ID=9310889

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8419655A Expired FR2575334B1 (fr) 1984-12-21 1984-12-21 Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir

Country Status (1)

Country Link
FR (1) FR2575334B1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5399892A (en) * 1993-11-29 1995-03-21 Harris Corporation Mesh geometry for MOS-gated semiconductor devices
EP0865085A1 (fr) 1997-03-11 1998-09-16 STMicroelectronics S.r.l. Transistor bipolaire à grille isolée avec une grande robustesse dynamique
JP2008147576A (ja) * 2006-12-13 2008-06-26 Sumitomo Electric Ind Ltd 半導体装置の製造方法
CN114334652B (zh) * 2020-09-29 2026-02-13 比亚迪半导体股份有限公司 一种mosfet及其制造方法
CN114628416B (zh) * 2020-12-11 2026-03-03 联合微电子中心有限责任公司 一种cmos图像传感器制作方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
JPH0614547B2 (ja) * 1980-11-21 1994-02-23 株式会社日立製作所 パワーｍｏｓｆｅｔ
US4462041A (en) * 1981-03-20 1984-07-24 Harris Corporation High speed and current gain insulated gate field effect transistors
JPS5889864A (ja) * 1981-11-24 1983-05-28 Hitachi Ltd 絶縁ゲ−ト型半導体装置

Also Published As

Publication number Publication date
FR2575334A1 (fr) 1986-06-27

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Legal Events

Date Code Title Description
ST Notification of lapse