FR2575334B1 - Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir - Google Patents

Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir

Info

Publication number
FR2575334B1
FR2575334B1 FR8419655A FR8419655A FR2575334B1 FR 2575334 B1 FR2575334 B1 FR 2575334B1 FR 8419655 A FR8419655 A FR 8419655A FR 8419655 A FR8419655 A FR 8419655A FR 2575334 B1 FR2575334 B1 FR 2575334B1
Authority
FR
France
Prior art keywords
obtaining
same
source regions
mos device
parallel strips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8419655A
Other languages
English (en)
Other versions
FR2575334A1 (fr
Inventor
Jean-Claude Vallee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR8419655A priority Critical patent/FR2575334B1/fr
Publication of FR2575334A1 publication Critical patent/FR2575334A1/fr
Application granted granted Critical
Publication of FR2575334B1 publication Critical patent/FR2575334B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H01L29/0692—Surface layout
    • H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
FR8419655A 1984-12-21 1984-12-21 Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir Expired FR2575334B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8419655A FR2575334B1 (fr) 1984-12-21 1984-12-21 Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8419655A FR2575334B1 (fr) 1984-12-21 1984-12-21 Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir

Publications (2)

Publication Number Publication Date
FR2575334A1 FR2575334A1 (fr) 1986-06-27
FR2575334B1 true FR2575334B1 (fr) 1987-01-23

Family

ID=9310889

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8419655A Expired FR2575334B1 (fr) 1984-12-21 1984-12-21 Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir

Country Status (1)

Country Link
FR (1) FR2575334B1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5399892A (en) * 1993-11-29 1995-03-21 Harris Corporation Mesh geometry for MOS-gated semiconductor devices
EP0865085A1 (fr) 1997-03-11 1998-09-16 STMicroelectronics S.r.l. Transistor bipolaire à grille isolée avec une grande robustesse dynamique
JP2008147576A (ja) * 2006-12-13 2008-06-26 Sumitomo Electric Ind Ltd 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593302B1 (en) * 1980-08-18 1998-02-03 Int Rectifier Corp Process for manufacture of high power mosfet laterally distributed high carrier density beneath the gate oxide
JPH0614547B2 (ja) * 1980-11-21 1994-02-23 株式会社日立製作所 パワーｍｏｓｆｅｔ
US4462041A (en) * 1981-03-20 1984-07-24 Harris Corporation High speed and current gain insulated gate field effect transistors
JPS5889864A (ja) * 1981-11-24 1983-05-28 Hitachi Ltd 絶縁ゲ−ト型半導体装置

Also Published As

Publication number Publication date
FR2575334A1 (fr) 1986-06-27

Similar Documents

Publication Publication Date Title
FR2605888B1 (fr) Procede et dispositif pour realiser une implantation transluminale
FR2494254B1 (fr) Dispositif et procede pour produire de l'ozone
FR2565221B1 (fr) Procede et appareil d'osmose inverse
FR2514037B1 (fr) Appareil et procede d'electrodeposition continue sur des pieces planes distinctes
FR2507078B1 (fr) Procede et dispositif d'echographie ultrasonore
FR2544647B1 (fr) Procede et dispositif pour fabriquer des pieces d'usinage
KR860700151A (ko) 자발공진 이용 방법 및 장치
NO161946C (no) Apparat og fremgangsmaate for kontinuerlig stroemningsanalyse.
IT1139759B (it) Procedimento e dispositivo per l'introduzione di almeno un inserto in fascicoli
DE3579835D1 (de) Ultrasonisches messverfahren und vorrichtung dafuer.
IT8324030A0 (it) Dispositivo di riscaldamento eprocedimento per la sua fabbricazione.
BR8504015A (pt) Aparelho e metodo para separacao de sementes
NO163065C (no) Rengjoeringsanordning for veier, flyplasser og lignende omraader.
IT1112913B (it) Dispositivo composito per l'esercizio positivo di segnaletica stradale,e metodo per la sua utilizzazione
FR2564569B1 (fr) Procede et dispositif permettant d'obtenir de l'energie
DE3778681D1 (de) Destillationsverfahren und vorrichtung.
FR2622202B1 (fr) Materiau de cimentation et procede de cimentation utilisant ledit materiau
FR2511706B1 (fr) Procede et dispositif d'electrodeposition
BE894745A (fr) Dispositif medical et procede pour le fabriquer
DK67683D0 (da) Fremgangsmade til fremstilling af 2,3-diaryl-5-halogen-thio-phener
IT1178020B (it) Metodo e dispositivo per la fabbricazione di rulli
DE3587710D1 (de) Teilbandkodierungsverfahren und Einrichtung.
FR2531662B1 (fr) Plaque de construction, dispositif et procede pour sa formation
FR2553251B1 (fr) Procede et appareil pour l'epandage d'engrais
FR2575334B1 (fr) Dispositif mos dont les regions de source sont disposees en bandes paralleles, et procede pour l'obtenir

Legal Events

Date Code Title Description
ST Notification of lapse