FR2544934B1 - Circuit electrique de commutation bloque au repos ayant une faible resistance a l'etat conducteur - Google Patents

Circuit electrique de commutation bloque au repos ayant une faible resistance a l'etat conducteur

Info

Publication number
FR2544934B1
FR2544934B1 FR8403385A FR8403385A FR2544934B1 FR 2544934 B1 FR2544934 B1 FR 2544934B1 FR 8403385 A FR8403385 A FR 8403385A FR 8403385 A FR8403385 A FR 8403385A FR 2544934 B1 FR2544934 B1 FR 2544934B1
Authority
FR
France
Prior art keywords
rest
switching circuit
low resistance
conductive state
electrical switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8403385A
Other languages
English (en)
French (fr)
Other versions
FR2544934A1 (fr
Inventor
Bantval Jayant Baliga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of FR2544934A1 publication Critical patent/FR2544934A1/fr
Application granted granted Critical
Publication of FR2544934B1 publication Critical patent/FR2544934B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
FR8403385A 1983-03-07 1984-03-05 Circuit electrique de commutation bloque au repos ayant une faible resistance a l'etat conducteur Expired FR2544934B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/473,089 US4523111A (en) 1983-03-07 1983-03-07 Normally-off, gate-controlled electrical circuit with low on-resistance

Publications (2)

Publication Number Publication Date
FR2544934A1 FR2544934A1 (fr) 1984-10-26
FR2544934B1 true FR2544934B1 (fr) 1986-09-26

Family

ID=23878162

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8403385A Expired FR2544934B1 (fr) 1983-03-07 1984-03-05 Circuit electrique de commutation bloque au repos ayant une faible resistance a l'etat conducteur

Country Status (5)

Country Link
US (1) US4523111A (enExample)
JP (1) JPS59176929A (enExample)
CA (1) CA1205877A (enExample)
DE (1) DE3407975C2 (enExample)
FR (1) FR2544934B1 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4743952A (en) * 1983-04-04 1988-05-10 General Electric Company Insulated-gate semiconductor device with low on-resistance
US4779015A (en) * 1987-05-26 1988-10-18 International Business Machines Corporation Low voltage swing CMOS receiver circuit
US5051618A (en) * 1988-06-20 1991-09-24 Idesco Oy High voltage system using enhancement and depletion field effect transistors
JP3242149B2 (ja) * 1992-05-29 2001-12-25 富士通株式会社 ダイナミック型分周回路
DE4439301C1 (de) * 1994-11-07 1996-07-18 Univ Dresden Tech Schaltungsanordnung mit einem Gate-gesteuerten Haupt- und einem Gate-gesteuerten Hilfsschalter
US5770492A (en) * 1995-06-07 1998-06-23 Lsi Logic Corporation Self-aligned twin well process
US5763302A (en) * 1995-06-07 1998-06-09 Lsi Logic Corporation Self-aligned twin well process
US5583062A (en) * 1995-06-07 1996-12-10 Lsi Logic Corporation Self-aligned twin well process having a SiO2 -polysilicon-SiO2 barrier mask
US5670393A (en) * 1995-07-12 1997-09-23 Lsi Logic Corporation Method of making combined metal oxide semiconductor and junction field effect transistor device
DE19943785A1 (de) * 1998-09-25 2000-03-30 Siemens Ag Elektronische Schalteinrichtung mit mindestens zwei Halbleiterbauelementen
DE19902520B4 (de) 1999-01-22 2005-10-06 Siemens Ag Hybrid-Leistungs-MOSFET
US6566936B1 (en) * 1999-10-29 2003-05-20 Lovoltech Inc. Two terminal rectifier normally OFF JFET
US6614289B1 (en) 2000-11-07 2003-09-02 Lovoltech Inc. Starter device for normally off FETs
US6355513B1 (en) * 1999-10-29 2002-03-12 Lovoltech, Inc. Asymmetric depletion region for normally off JFET
US6356059B1 (en) * 2001-02-16 2002-03-12 Lovoltech, Inc. Buck converter with normally off JFET
US6900506B1 (en) 2002-04-04 2005-05-31 Lovoltech, Inc. Method and structure for a high voltage junction field effect transistor
US7262461B1 (en) 2002-05-20 2007-08-28 Qspeed Semiconductor Inc. JFET and MESFET structures for low voltage, high current and high frequency applications
US6921932B1 (en) 2002-05-20 2005-07-26 Lovoltech, Inc. JFET and MESFET structures for low voltage, high current and high frequency applications
US7268378B1 (en) 2002-05-29 2007-09-11 Qspeed Semiconductor Inc. Structure for reduced gate capacitance in a JFET
US6777722B1 (en) 2002-07-02 2004-08-17 Lovoltech, Inc. Method and structure for double dose gate in a JFET
US6696706B1 (en) 2002-10-22 2004-02-24 Lovoltech, Inc. Structure and method for a junction field effect transistor with reduced gate capacitance
US7075132B1 (en) 2002-12-30 2006-07-11 Lovoltech, Inc. Programmable junction field effect transistor and method for programming the same
JP4265234B2 (ja) * 2003-02-13 2009-05-20 株式会社デンソー 炭化珪素半導体装置およびその製造方法
US7009228B1 (en) * 2003-03-04 2006-03-07 Lovoltech, Incorporated Guard ring structure and method for fabricating same
US7038260B1 (en) 2003-03-04 2006-05-02 Lovoltech, Incorporated Dual gate structure for a FET and method for fabricating same
US20080291973A1 (en) * 2004-11-16 2008-11-27 Acco Integrated Ultra-Wideband (Uwb) Pulse Generator
EP1935026A1 (en) * 2005-10-12 2008-06-25 Acco Insulated gate field-effet transistor having a dummy gate
US7969243B2 (en) * 2009-04-22 2011-06-28 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
US8928410B2 (en) 2008-02-13 2015-01-06 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
KR20120132643A (ko) * 2008-02-13 2012-12-06 아코 세미컨덕터, 인크 높은 항복 전압 이중 게이트 반도체 디바이스
US9240402B2 (en) 2008-02-13 2016-01-19 Acco Semiconductor, Inc. Electronic circuits including a MOSFET and a dual-gate JFET
US7863645B2 (en) * 2008-02-13 2011-01-04 ACCO Semiconductor Inc. High breakdown voltage double-gate semiconductor device
SE533026C2 (sv) * 2008-04-04 2010-06-08 Klas-Haakan Eklund Fälteffekttransistor med isolerad gate seriekopplad med en JFET
US7688117B1 (en) 2008-04-21 2010-03-30 The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration N channel JFET based digital logic gate structure
US7808415B1 (en) * 2009-03-25 2010-10-05 Acco Semiconductor, Inc. Sigma-delta modulator including truncation and applications thereof
US7952431B2 (en) * 2009-08-28 2011-05-31 Acco Semiconductor, Inc. Linearization circuits and methods for power amplification
US8532584B2 (en) 2010-04-30 2013-09-10 Acco Semiconductor, Inc. RF switches
JP5979998B2 (ja) * 2012-06-18 2016-08-31 ルネサスエレクトロニクス株式会社 半導体装置及びそれを用いたシステム
US9871510B1 (en) 2016-08-24 2018-01-16 Power Integrations, Inc. Clamp for a hybrid switch
RU177625U1 (ru) * 2017-09-11 2018-03-02 Российская Федерация, от имени которой выступает Министерство промышленности и торговли Российской Федерации Публичное акционерное общество "Научно-производственное объединение "ЭНЕРГОМОДУЛЬ" Базовый элемент высоковольтного ключевого устройства
US10826485B2 (en) * 2018-12-17 2020-11-03 Analog Devices International Unlimited Company Cascode compound switch slew rate control
US20200195246A1 (en) * 2018-12-17 2020-06-18 Analog Devices International Unlimited Company Compound switch with jfet cascode gate forward-biasing control
US20250202474A1 (en) * 2023-12-18 2025-06-19 Monolithic Power Systems, Inc. Switching slew rate control of cascode switch device and gate driver thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3521141A (en) * 1967-10-30 1970-07-21 Ibm Leakage controlled electric charge switching and storing circuitry
US4663547A (en) * 1981-04-24 1987-05-05 General Electric Company Composite circuit for power semiconductor switching

Also Published As

Publication number Publication date
DE3407975A1 (de) 1984-09-13
FR2544934A1 (fr) 1984-10-26
JPH0257735B2 (enExample) 1990-12-05
DE3407975C2 (de) 1985-08-29
CA1205877A (en) 1986-06-10
JPS59176929A (ja) 1984-10-06
US4523111A (en) 1985-06-11

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Legal Events

Date Code Title Description
ST Notification of lapse