FR2518815A1 - Transistor mesa haute tension - Google Patents
Transistor mesa haute tension Download PDFInfo
- Publication number
- FR2518815A1 FR2518815A1 FR8123953A FR8123953A FR2518815A1 FR 2518815 A1 FR2518815 A1 FR 2518815A1 FR 8123953 A FR8123953 A FR 8123953A FR 8123953 A FR8123953 A FR 8123953A FR 2518815 A1 FR2518815 A1 FR 2518815A1
- Authority
- FR
- France
- Prior art keywords
- layer
- type
- high voltage
- diffusion
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 230000004807 localization Effects 0.000 claims abstract description 3
- 238000009792 diffusion process Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000000284 resting effect Effects 0.000 claims description 2
- 238000003892 spreading Methods 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 abstract description 5
- 230000000873 masking effect Effects 0.000 abstract description 4
- 238000002161 passivation Methods 0.000 description 9
- 235000012431 wafers Nutrition 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- CMSGUKVDXXTJDQ-UHFFFAOYSA-N 4-(2-naphthalen-1-ylethylamino)-4-oxobutanoic acid Chemical compound C1=CC=C2C(CCNC(=O)CCC(=O)O)=CC=CC2=C1 CMSGUKVDXXTJDQ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8123953A FR2518815A1 (fr) | 1981-12-22 | 1981-12-22 | Transistor mesa haute tension |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8123953A FR2518815A1 (fr) | 1981-12-22 | 1981-12-22 | Transistor mesa haute tension |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2518815A1 true FR2518815A1 (fr) | 1983-06-24 |
| FR2518815B1 FR2518815B1 (enExample) | 1984-04-06 |
Family
ID=9265267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8123953A Granted FR2518815A1 (fr) | 1981-12-22 | 1981-12-22 | Transistor mesa haute tension |
Country Status (1)
| Country | Link |
|---|---|
| FR (1) | FR2518815A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0519268A3 (en) * | 1991-06-17 | 1993-03-10 | Telefunken Electronic Gmbh | High-voltage semiconductor device |
-
1981
- 1981-12-22 FR FR8123953A patent/FR2518815A1/fr active Granted
Non-Patent Citations (3)
| Title |
|---|
| EXBK/78 * |
| EXBK/80 * |
| EXBK/81 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0519268A3 (en) * | 1991-06-17 | 1993-03-10 | Telefunken Electronic Gmbh | High-voltage semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2518815B1 (enExample) | 1984-04-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |