FR2518815B1 - - Google Patents

Info

Publication number
FR2518815B1
FR2518815B1 FR8123953A FR8123953A FR2518815B1 FR 2518815 B1 FR2518815 B1 FR 2518815B1 FR 8123953 A FR8123953 A FR 8123953A FR 8123953 A FR8123953 A FR 8123953A FR 2518815 B1 FR2518815 B1 FR 2518815B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8123953A
Other languages
French (fr)
Other versions
FR2518815A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR8123953A priority Critical patent/FR2518815A1/fr
Publication of FR2518815A1 publication Critical patent/FR2518815A1/fr
Application granted granted Critical
Publication of FR2518815B1 publication Critical patent/FR2518815B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
FR8123953A 1981-12-22 1981-12-22 Transistor mesa haute tension Granted FR2518815A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR8123953A FR2518815A1 (fr) 1981-12-22 1981-12-22 Transistor mesa haute tension

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8123953A FR2518815A1 (fr) 1981-12-22 1981-12-22 Transistor mesa haute tension

Publications (2)

Publication Number Publication Date
FR2518815A1 FR2518815A1 (fr) 1983-06-24
FR2518815B1 true FR2518815B1 (enExample) 1984-04-06

Family

ID=9265267

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8123953A Granted FR2518815A1 (fr) 1981-12-22 1981-12-22 Transistor mesa haute tension

Country Status (1)

Country Link
FR (1) FR2518815A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4119904A1 (de) * 1991-06-17 1992-12-24 Telefunken Electronic Gmbh Halbleiteranordnung

Also Published As

Publication number Publication date
FR2518815A1 (fr) 1983-06-24

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Legal Events

Date Code Title Description
ST Notification of lapse