FR2517485B1 - Methode de fabrication de lasers semi-conducteurs - Google Patents

Methode de fabrication de lasers semi-conducteurs

Info

Publication number
FR2517485B1
FR2517485B1 FR8220156A FR8220156A FR2517485B1 FR 2517485 B1 FR2517485 B1 FR 2517485B1 FR 8220156 A FR8220156 A FR 8220156A FR 8220156 A FR8220156 A FR 8220156A FR 2517485 B1 FR2517485 B1 FR 2517485B1
Authority
FR
France
Prior art keywords
semiconductor lasers
manufacturing semiconductor
manufacturing
lasers
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8220156A
Other languages
English (en)
Other versions
FR2517485A1 (fr
Inventor
Stephen Ernest Henry Turley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of FR2517485A1 publication Critical patent/FR2517485A1/fr
Application granted granted Critical
Publication of FR2517485B1 publication Critical patent/FR2517485B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/978—Semiconductor device manufacturing: process forming tapered edges on substrate or adjacent layers

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
FR8220156A 1981-12-01 1982-12-01 Methode de fabrication de lasers semi-conducteurs Expired FR2517485B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08136167A GB2114808B (en) 1981-12-01 1981-12-01 Semiconductor laser manufacture

Publications (2)

Publication Number Publication Date
FR2517485A1 FR2517485A1 (fr) 1983-06-03
FR2517485B1 true FR2517485B1 (fr) 1987-04-24

Family

ID=10526286

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8220156A Expired FR2517485B1 (fr) 1981-12-01 1982-12-01 Methode de fabrication de lasers semi-conducteurs

Country Status (5)

Country Link
US (1) US4496403A (fr)
AU (1) AU553906B2 (fr)
DE (1) DE3244223A1 (fr)
FR (1) FR2517485B1 (fr)
GB (1) GB2114808B (fr)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4566171A (en) * 1983-06-20 1986-01-28 At&T Bell Laboratories Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices
US4661961A (en) * 1983-06-20 1987-04-28 American Telephone And Telegraph Company, At&T Bell Laboratories Buried heterostructure devices with unique contact-facilitating layers
GB2145558A (en) * 1983-08-23 1985-03-27 Standard Telephones Cables Ltd Field effect transistor
DE3421215A1 (de) * 1984-06-07 1985-12-12 Aeg-Telefunken Ag, 1000 Berlin Und 6000 Frankfurt Verfahren zur erzeugung von ingaasp und ingaas - doppelheterostrukturlasern und -led's mittels fluessigphasenepitaxie fuer einen wellenlaengenbereich von (lambda) = 1,2 (my)m bis 1,7 (my)m
GB2160823B (en) * 1984-06-28 1987-05-28 Stc Plc Semiconductor devices and their fabrication
US4777148A (en) * 1985-01-30 1988-10-11 Massachusetts Institute Of Technology Process for making a mesa GaInAsP/InP distributed feedback laser
US4647320A (en) * 1985-05-22 1987-03-03 Trw Inc. Method of making a surface emitting light emitting diode
US4694311A (en) * 1985-05-22 1987-09-15 Trw Inc. Planar light-emitting diode
JPS62283686A (ja) * 1986-05-31 1987-12-09 Mitsubishi Electric Corp 半導体レ−ザの製造方法
GB8622767D0 (en) * 1986-09-22 1986-10-29 British Telecomm Semiconductor structures
US4818722A (en) * 1986-09-29 1989-04-04 Siemens Aktiengesellschaft Method for generating a strip waveguide
DE3713045A1 (de) * 1987-04-16 1988-10-27 Siemens Ag Verfahren zur herstellung einer laserdiode mit vergrabener aktiver schicht und seitlicher strombegrenzung und laserdiode mit vergrabener aktiver schicht und seitlicher strombegrenzung
JPS63284878A (ja) * 1987-04-30 1988-11-22 シーメンス、アクチエンゲゼルシヤフト 埋込み活性層をもつレーザダイオードの製造方法
US5111469A (en) * 1989-08-15 1992-05-05 Sony Corporation Semiconductor laser
JP2827326B2 (ja) * 1989-09-27 1998-11-25 住友電気工業株式会社 半導体レーザの製造方法
US5222091A (en) * 1990-09-14 1993-06-22 Gte Laboratories Incorporated Structure for indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor
US5082799A (en) * 1990-09-14 1992-01-21 Gte Laboratories Incorporated Method for fabricating indium phosphide/indium gallium arsenide phosphide buried heterostructure semiconductor lasers
US5319661A (en) * 1990-12-27 1994-06-07 The Furukawa Electric Co., Ltd. Semiconductor double heterostructure laser device with InP current blocking layer
JPH09246665A (ja) * 1996-03-11 1997-09-19 Fuji Photo Film Co Ltd 半導体レーザおよびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4326176A (en) * 1976-04-16 1982-04-20 Hitachi, Ltd. Semiconductor laser device
US4287485A (en) * 1977-07-18 1981-09-01 Massachusetts Institute Of Technology GaInAsP/InP Double-heterostructure lasers
JPS55162288A (en) * 1979-06-04 1980-12-17 Nippon Telegr & Teleph Corp <Ntt> Manufacture of buried type photosemiconductor device
JPS5826834B2 (ja) * 1979-09-28 1983-06-06 株式会社日立製作所 半導体レ−ザ−装置
US4355396A (en) * 1979-11-23 1982-10-19 Rca Corporation Semiconductor laser diode and method of making the same
US4276098A (en) * 1980-03-31 1981-06-30 Bell Telephone Laboratories, Incorporated Batch processing of semiconductor devices
US4425650A (en) * 1980-04-15 1984-01-10 Nippon Electric Co., Ltd. Buried heterostructure laser diode
JPS56157082A (en) * 1980-05-09 1981-12-04 Hitachi Ltd Semiconductor laser device and manufacture
US4354898A (en) * 1981-06-24 1982-10-19 Bell Telephone Laboratories, Incorporated Method of preferentially etching optically flat mirror facets in InGaAsP/InP heterostructures

Also Published As

Publication number Publication date
GB2114808A (en) 1983-08-24
GB2114808B (en) 1985-10-09
AU553906B2 (en) 1986-07-31
US4496403A (en) 1985-01-29
FR2517485A1 (fr) 1983-06-03
DE3244223A1 (de) 1983-06-09
AU9100182A (en) 1983-06-09

Similar Documents

Publication Publication Date Title
FR2517485B1 (fr) Methode de fabrication de lasers semi-conducteurs
FR2508704B1 (fr) Procede de fabrication de transistors bipolaires integres de tres petites dimensions
KR850700044A (ko) 이온 반응 에칭용 장치 제조방법
DE3265338D1 (en) Semiconductor laser having at least two radiation beams, and method of manufacturing same
TR23030A (tr) Asillendirilmis diketonik bilesiklerin ueretilmesine mahsus usul
KR850004442A (ko) 수소화 규소의 제조방법
DK366684D0 (da) Fremgangsmaade til fremstilling af cefuroximaxetil
DK223587D0 (da) Fremgangsmaade til fremstilling af azopigmenter
DK159075C (da) Fremgangsmaade til fremstilling af sammenlimede traestolper
DK160311C (da) Fremgangsmaade til fremstilling af optisk aktive penemer
FR2537969B1 (fr) Procede de fabrication de miroirs
KR840008360A (ko) 벤조퀴놀리진의 제조방법
FR2504298B1 (fr) Methode de fabrication de disques video
DK223487D0 (da) Fremgangsmaade til fremstilling af azopigmenter
DK354085D0 (da) Fremgangsmaade til fremstilling af optisk aktive forbindelser
KR840006178A (ko) 유리제품의 제조방법
KR850006260A (ko) 상보형 반도체장치의 제조방법
DE3380332D1 (en) Fabrication of cleaved semiconductor lasers
DK118382A (da) Fremgangsmaade til fremstilling af anthelmintika
KR850006261A (ko) 상보형 반도체장치의 제조방법
KR840005067A (ko) 폴리푸레닐계화합물의제조방법
DK202983A (da) Fremgangsmaade til fremstilling af l-lysin
KR880003885A (ko) 퍼할로히드로카본 하이포클로라이트의 제조방법
BE893706A (fr) Fabrication de benzydamine
IT8320046A0 (it) Metodo di fabbricazione di commutatori.

Legal Events

Date Code Title Description
ST Notification of lapse