FR2517470B1 - LASER STIMULATED HIGH CURRENT ELECTRON GENERATOR AND MANUFACTURING METHOD THEREOF - Google Patents

LASER STIMULATED HIGH CURRENT ELECTRON GENERATOR AND MANUFACTURING METHOD THEREOF

Info

Publication number
FR2517470B1
FR2517470B1 FR8219870A FR8219870A FR2517470B1 FR 2517470 B1 FR2517470 B1 FR 2517470B1 FR 8219870 A FR8219870 A FR 8219870A FR 8219870 A FR8219870 A FR 8219870A FR 2517470 B1 FR2517470 B1 FR 2517470B1
Authority
FR
France
Prior art keywords
manufacturing
high current
electron generator
current electron
laser stimulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8219870A
Other languages
French (fr)
Other versions
FR2517470A1 (en
Inventor
Chunghsin Lee
Peter E Oettinger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thermo Fisher Scientific Inc
Original Assignee
Thermo Electron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thermo Electron Corp filed Critical Thermo Electron Corp
Publication of FR2517470A1 publication Critical patent/FR2517470A1/en
Application granted granted Critical
Publication of FR2517470B1 publication Critical patent/FR2517470B1/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3426—Alkaline metal compounds, e.g. Na-K-Sb
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06333—Photo emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31779—Lithography by projection from patterned photocathode
FR8219870A 1981-11-30 1982-11-26 LASER STIMULATED HIGH CURRENT ELECTRON GENERATOR AND MANUFACTURING METHOD THEREOF Expired FR2517470B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32596081A 1981-11-30 1981-11-30

Publications (2)

Publication Number Publication Date
FR2517470A1 FR2517470A1 (en) 1983-06-03
FR2517470B1 true FR2517470B1 (en) 1989-01-20

Family

ID=23270181

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8219870A Expired FR2517470B1 (en) 1981-11-30 1982-11-26 LASER STIMULATED HIGH CURRENT ELECTRON GENERATOR AND MANUFACTURING METHOD THEREOF

Country Status (4)

Country Link
JP (2) JPS58108639A (en)
DE (1) DE3241766A1 (en)
FR (1) FR2517470B1 (en)
GB (2) GB2111299B (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037633A (en) * 1983-08-09 1985-02-27 Hamamatsu Photonics Kk Photoelectron gun
US4606061A (en) * 1983-12-28 1986-08-12 Tokyo Shibaura Denki Kabushiki Kaisha Light controlled x-ray scanner
GB8422895D0 (en) * 1984-09-11 1984-10-17 Texas Instruments Ltd Electron beam apparatus
KR910000756B1 (en) * 1984-11-20 1991-02-06 Fujitsu Ltd Method for projection photoelectron image
GB8506788D0 (en) * 1985-03-15 1985-04-17 Secr Defence Thermal electron source
JPS6347928A (en) * 1986-08-18 1988-02-29 Fujitsu Ltd Mask for photoelectron image transfer
US4963823A (en) * 1988-06-27 1990-10-16 Siemens Aktiengesellschaft Electron beam measuring instrument
EP0348611B1 (en) * 1988-07-01 1994-07-20 International Business Machines Corporation Fibre optic photocathode
GB2260666B (en) * 1991-09-20 1995-12-20 Sharp Kk Time division multiplexed diode lasers
US5684360A (en) * 1995-07-10 1997-11-04 Intevac, Inc. Electron sources utilizing negative electron affinity photocathodes with ultra-small emission areas
JPH0936025A (en) * 1995-07-14 1997-02-07 Nec Corp Method and apparatus for electron beam exposure
US6538256B1 (en) 2000-08-17 2003-03-25 Applied Materials, Inc. Electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance
DE10245052A1 (en) * 2002-09-26 2004-04-08 Leo Elektronenmikroskopie Gmbh Electron beam source and electron optical apparatus with one
CN100394654C (en) * 2003-01-16 2008-06-11 松下电器产业株式会社 Photoelectronic discharge plate and negative particle generator charged clear device and the like equipment using the plate
US7187755B2 (en) * 2004-11-02 2007-03-06 General Electric Company Electron emitter assembly and method for generating electron beams
EP2917009A4 (en) * 2012-11-09 2016-08-17 I B B Rheologie Inc Methods and systems using concrete mix temperature measurement
JP6664223B2 (en) * 2016-01-12 2020-03-13 株式会社荏原製作所 Electron gun and inspection device having the same
JP6867568B2 (en) * 2016-11-07 2021-04-28 国立大学法人東京工業大学 Nanoscale photocathode electron source

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB812403A (en) * 1954-08-06 1959-04-22 Emi Ltd Improvements in or relating to the formation of evaporated layers
GB714054A (en) * 1950-03-17 1954-08-25 Emi Ltd Improvements relating to the manufacture of photo-electric devices
GB1005708A (en) * 1960-12-14 1965-09-29 Emi Ltd Improvements relating to photo electrically sensitive devices
CH391912A (en) * 1961-11-09 1965-05-15 Trueb Taeuber & Co Ag Process for visualization and recording of electron-optical images
FR1345063A (en) * 1962-10-23 1963-12-06 Thomson Houston Comp Francaise Photoelectric cathode
DE1464594A1 (en) * 1963-07-18 1968-12-19 Forschungslaboratorium Dr Ing Photocathode
GB1117759A (en) * 1964-12-16 1968-06-26 Matsushita Electric Ind Co Ltd Photoemissive device
US4097761A (en) * 1966-02-16 1978-06-27 Rca Corporation Image tube cathode
FR1556109A (en) * 1967-03-10 1969-01-31
FR1566316A (en) * 1968-01-31 1969-05-09
DE1963740A1 (en) * 1969-12-19 1971-07-08 Max Planck Gesellschaft Pulse electron source
FR2076604A5 (en) * 1970-01-21 1971-10-15 Commissariat Energie Atomique
US3821778A (en) * 1972-12-04 1974-06-28 Hughes Aircraft Co Infrared photocathode
JPS573182B2 (en) * 1973-08-08 1982-01-20
JPS5224385A (en) * 1975-08-20 1977-02-23 Sanki Eng Co Ltd Single filter press
US4039810A (en) * 1976-06-30 1977-08-02 International Business Machines Corporation Electron projection microfabrication system
DE2719799A1 (en) * 1977-04-28 1978-11-02 Siemens Ag Mask imaging photoelectronic projector - has mask as positive electrode of acceleration field between photocathode and semiconductor wafer
JPS5469953A (en) * 1977-11-15 1979-06-05 Toshiba Corp Electron emission device
JPS54146952A (en) * 1978-05-10 1979-11-16 Hitachi Denshi Ltd Photoelectric surface
US4313072A (en) * 1979-10-10 1982-01-26 The United States Of America As Represented By The United States Department Of Energy Light modulated switches and radio frequency emitters

Also Published As

Publication number Publication date
GB8511180D0 (en) 1985-06-12
JPS58108639A (en) 1983-06-28
GB2111299B (en) 1986-07-09
DE3241766C2 (en) 1987-04-09
FR2517470A1 (en) 1983-06-03
DE3241766A1 (en) 1983-06-09
GB2111299A (en) 1983-06-29
GB2157884A (en) 1985-10-30
JPH03176953A (en) 1991-07-31
GB2157884B (en) 1986-07-23

Similar Documents

Publication Publication Date Title
FR2517470B1 (en) LASER STIMULATED HIGH CURRENT ELECTRON GENERATOR AND MANUFACTURING METHOD THEREOF
FR2569566B1 (en) IMPLANT AND ITS MANUFACTURING METHOD
DE3273692D1 (en) An electron beam array lithography apparatus and a method of operating the same
BE895124A (en) POCHEMEDICAL AND MANUFACTURING METHOD THEREOF
JPS5618421A (en) Method of manufacturing semiconductor device using electron beam
JPS57196445A (en) Forming electron beam generator
FR2568725B1 (en) THERMOELECTRIC GENERATOR AND MANUFACTURING METHOD THEREOF
DE3660878D1 (en) Cathode for electron tube and manufacturing method thereof
EP0073658A3 (en) Electron beam exposing method
FR2310641A1 (en) METHOD OF MANUFACTURING AN ELECTRICAL CONNECTOR
DE3373953D1 (en) Method of manufacturing an electron tube
FR2536140B1 (en) HIGH TEMPERATURE SELF-LUBRICATING BEARING AND MANUFACTURING METHOD THEREOF
FR2552596B1 (en) VOLTAGE MULTIPLIER CIRCUIT AND MANUFACTURING METHOD THEREOF
DE3684122D1 (en) HIGH VOLTAGE WIDE CURRENT GENERATOR AND HIGH VOLTAGE / WIDE CURRENT GENERATION METHOD.
FR2578548B1 (en) ACETYLENE BLACK AND MANUFACTURING METHOD THEREOF
FR2559856B1 (en) TIGHTENING COLLAR AND MANUFACTURING METHOD THEREOF
FR2659794B1 (en) CATHODE IMPREGNATED WITH ELECTRON EMISSIVE MATERIAL AND MANUFACTURING METHOD THEREOF.
FR2509291B1 (en) CYCLOPENTENONE DERIVATIVES AND THEIR MANUFACTURING METHOD
DE3363530D1 (en) Method of adjusting the current intensity of an electron beam in a pick-up tube and television camera system suitable therefor
FR2611545B1 (en) METHOD FOR MANUFACTURING AN ELECTRICALLY INSULATING PROFILE
FR2530955B1 (en) ANTI-WRINKLE IMPLANT AND ITS MANUFACTURING METHOD
FR2531569B1 (en) CIRCUIT BREAKER AND CONTINUOUS MANUFACTURING METHOD THEREOF
IE811949L (en) Electron beam exposure method
FR2574168B1 (en) IMPROVED ELECTRIC CONVECTOR AND MANUFACTURING METHOD
FR2603146B1 (en) ACTIVE LOAD TYPE CURRENT SOURCE AND METHOD FOR PRODUCING THE SAME

Legal Events

Date Code Title Description
ST Notification of lapse