FR2509516A1 - Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise - Google Patents

Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise Download PDF

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Publication number
FR2509516A1
FR2509516A1 FR8113424A FR8113424A FR2509516A1 FR 2509516 A1 FR2509516 A1 FR 2509516A1 FR 8113424 A FR8113424 A FR 8113424A FR 8113424 A FR8113424 A FR 8113424A FR 2509516 A1 FR2509516 A1 FR 2509516A1
Authority
FR
France
Prior art keywords
metal layer
semiconductor substrate
capacitor
deposited
dielectric layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8113424A
Other languages
English (en)
French (fr)
Other versions
FR2509516B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Michel Joseph Marie Binet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoires dElectronique Philips SAS
Original Assignee
Laboratoires dElectronique et de Physique Appliquee
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoires dElectronique et de Physique Appliquee filed Critical Laboratoires dElectronique et de Physique Appliquee
Priority to FR8113424A priority Critical patent/FR2509516A1/fr
Priority to US06/391,266 priority patent/US4475120A/en
Priority to EP82200814A priority patent/EP0070064B1/fr
Priority to DE8282200814T priority patent/DE3266800D1/de
Priority to JP57116675A priority patent/JPS5816560A/ja
Publication of FR2509516A1 publication Critical patent/FR2509516A1/fr
Application granted granted Critical
Publication of FR2509516B1 publication Critical patent/FR2509516B1/fr
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Weting (AREA)
FR8113424A 1981-07-08 1981-07-08 Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise Granted FR2509516A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8113424A FR2509516A1 (fr) 1981-07-08 1981-07-08 Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise
US06/391,266 US4475120A (en) 1981-07-08 1982-06-24 Method of raising the breakdown voltage of an integrated capacitor and capacitor manufactured by this method
EP82200814A EP0070064B1 (fr) 1981-07-08 1982-06-30 Procédé destiné à accroitre la tension de claquage d'un condensateur intégré et condensateur ainsi réalisé
DE8282200814T DE3266800D1 (en) 1981-07-08 1982-06-30 Method of increasing the breakdown voltage of an integrated capacitor and the capacitor so obtained
JP57116675A JPS5816560A (ja) 1981-07-08 1982-07-05 集積化コンデンサの形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8113424A FR2509516A1 (fr) 1981-07-08 1981-07-08 Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise

Publications (2)

Publication Number Publication Date
FR2509516A1 true FR2509516A1 (fr) 1983-01-14
FR2509516B1 FR2509516B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1984-04-20

Family

ID=9260349

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8113424A Granted FR2509516A1 (fr) 1981-07-08 1981-07-08 Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise

Country Status (5)

Country Link
US (1) US4475120A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0070064B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5816560A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3266800D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2509516A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5508234A (en) * 1994-10-31 1996-04-16 International Business Machines Corporation Microcavity structures, fabrication processes, and applications thereof
US8692318B2 (en) * 2011-05-10 2014-04-08 Nanya Technology Corp. Trench MOS structure and method for making the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432918A (en) * 1963-11-12 1969-03-18 Texas Instruments Inc Method of making a capacitor by vacuum depositing manganese oxide as the electrolytic layer
FR2138339A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-05-24 1973-01-05 Radiotechnique Compelec
US3714529A (en) * 1971-05-04 1973-01-30 Microsystems Int Ltd Thin film capacitor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3466719A (en) * 1967-01-11 1969-09-16 Texas Instruments Inc Method of fabricating thin film capacitors
US3619387A (en) * 1970-01-27 1971-11-09 Bell Telephone Labor Inc Technique for the fabrication of thin film capacitor including lead dioxide conductive films
US3679942A (en) * 1971-02-09 1972-07-25 Rca Corp Metal-oxide-metal, thin-film capacitors and method of making same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432918A (en) * 1963-11-12 1969-03-18 Texas Instruments Inc Method of making a capacitor by vacuum depositing manganese oxide as the electrolytic layer
US3714529A (en) * 1971-05-04 1973-01-30 Microsystems Int Ltd Thin film capacitor
FR2138339A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-05-24 1973-01-05 Radiotechnique Compelec

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/79 *

Also Published As

Publication number Publication date
US4475120A (en) 1984-10-02
EP0070064B1 (fr) 1985-10-09
EP0070064A1 (fr) 1983-01-19
FR2509516B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1984-04-20
DE3266800D1 (en) 1985-11-14
JPS5816560A (ja) 1983-01-31
JPH0418472B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-03-27

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