DE3266800D1 - Method of increasing the breakdown voltage of an integrated capacitor and the capacitor so obtained - Google Patents

Method of increasing the breakdown voltage of an integrated capacitor and the capacitor so obtained

Info

Publication number
DE3266800D1
DE3266800D1 DE8282200814T DE3266800T DE3266800D1 DE 3266800 D1 DE3266800 D1 DE 3266800D1 DE 8282200814 T DE8282200814 T DE 8282200814T DE 3266800 T DE3266800 T DE 3266800T DE 3266800 D1 DE3266800 D1 DE 3266800D1
Authority
DE
Germany
Prior art keywords
capacitor
increasing
breakdown voltage
integrated
integrated capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282200814T
Other languages
English (en)
Inventor
Michel Joseph Marie Binet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electronique & Physique
Laboratoires dElectronique Philips SAS
Koninklijke Philips NV
Original Assignee
Electronique & Physique
Laboratoires dElectronique et de Physique Appliquee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electronique & Physique, Laboratoires dElectronique et de Physique Appliquee, Philips Gloeilampenfabrieken NV filed Critical Electronique & Physique
Application granted granted Critical
Publication of DE3266800D1 publication Critical patent/DE3266800D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H01L27/016—Thin-film circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics

Landscapes

  • Power Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Weting (AREA)
DE8282200814T 1981-07-08 1982-06-30 Method of increasing the breakdown voltage of an integrated capacitor and the capacitor so obtained Expired DE3266800D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8113424A FR2509516A1 (fr) 1981-07-08 1981-07-08 Procede destine a accroitre la tension de claquage d'un condensateur integre et condensateur ainsi realise

Publications (1)

Publication Number Publication Date
DE3266800D1 true DE3266800D1 (en) 1985-11-14

Family

ID=9260349

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282200814T Expired DE3266800D1 (en) 1981-07-08 1982-06-30 Method of increasing the breakdown voltage of an integrated capacitor and the capacitor so obtained

Country Status (5)

Country Link
US (1) US4475120A (de)
EP (1) EP0070064B1 (de)
JP (1) JPS5816560A (de)
DE (1) DE3266800D1 (de)
FR (1) FR2509516A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5508234A (en) * 1994-10-31 1996-04-16 International Business Machines Corporation Microcavity structures, fabrication processes, and applications thereof
US8692318B2 (en) * 2011-05-10 2014-04-08 Nanya Technology Corp. Trench MOS structure and method for making the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3432918A (en) * 1963-11-12 1969-03-18 Texas Instruments Inc Method of making a capacitor by vacuum depositing manganese oxide as the electrolytic layer
US3466719A (en) * 1967-01-11 1969-09-16 Texas Instruments Inc Method of fabricating thin film capacitors
US3619387A (en) * 1970-01-27 1971-11-09 Bell Telephone Labor Inc Technique for the fabrication of thin film capacitor including lead dioxide conductive films
US3679942A (en) * 1971-02-09 1972-07-25 Rca Corp Metal-oxide-metal, thin-film capacitors and method of making same
US3714529A (en) * 1971-05-04 1973-01-30 Microsystems Int Ltd Thin film capacitor
FR2138339B1 (de) * 1971-05-24 1974-08-19 Radiotechnique Compelec

Also Published As

Publication number Publication date
EP0070064B1 (de) 1985-10-09
US4475120A (en) 1984-10-02
FR2509516A1 (fr) 1983-01-14
EP0070064A1 (de) 1983-01-19
FR2509516B1 (de) 1984-04-20
JPH0418472B2 (de) 1992-03-27
JPS5816560A (ja) 1983-01-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee