FR2504727A1 - Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel - Google Patents

Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel Download PDF

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Publication number
FR2504727A1
FR2504727A1 FR8108449A FR8108449A FR2504727A1 FR 2504727 A1 FR2504727 A1 FR 2504727A1 FR 8108449 A FR8108449 A FR 8108449A FR 8108449 A FR8108449 A FR 8108449A FR 2504727 A1 FR2504727 A1 FR 2504727A1
Authority
FR
France
Prior art keywords
capacitor
cathode
circuit
anode
sample
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8108449A
Other languages
English (en)
French (fr)
Other versions
FR2504727B1 (enExample
Inventor
Michel Bruel
Michel Floccari
Jean Francois Michaud
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR8108449A priority Critical patent/FR2504727A1/fr
Priority to EP82400708A priority patent/EP0064003B1/fr
Priority to DE8282400708T priority patent/DE3262385D1/de
Priority to US06/370,386 priority patent/US4527044A/en
Priority to JP57072482A priority patent/JPS57186325A/ja
Publication of FR2504727A1 publication Critical patent/FR2504727A1/fr
Application granted granted Critical
Publication of FR2504727B1 publication Critical patent/FR2504727B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
FR8108449A 1981-04-28 1981-04-28 Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel Granted FR2504727A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR8108449A FR2504727A1 (fr) 1981-04-28 1981-04-28 Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel
EP82400708A EP0064003B1 (fr) 1981-04-28 1982-04-20 Dispositif de traitement d'un échantillon par faisceau électronique impulsionnel
DE8282400708T DE3262385D1 (en) 1981-04-28 1982-04-20 Device for the pulsed electron beam processing of a specimen
US06/370,386 US4527044A (en) 1981-04-28 1982-04-21 Apparatus for treating a sample by a pulsed electron beam
JP57072482A JPS57186325A (en) 1981-04-28 1982-04-28 Specimen processor with pulse electron beam

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8108449A FR2504727A1 (fr) 1981-04-28 1981-04-28 Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel

Publications (2)

Publication Number Publication Date
FR2504727A1 true FR2504727A1 (fr) 1982-10-29
FR2504727B1 FR2504727B1 (enExample) 1983-05-27

Family

ID=9257870

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8108449A Granted FR2504727A1 (fr) 1981-04-28 1981-04-28 Dispositif de traitement d'un echantillon par faisceau electronique impulsionnel

Country Status (5)

Country Link
US (1) US4527044A (enExample)
EP (1) EP0064003B1 (enExample)
JP (1) JPS57186325A (enExample)
DE (1) DE3262385D1 (enExample)
FR (1) FR2504727A1 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62222633A (ja) * 1986-03-25 1987-09-30 Sharp Corp 半導体素子の製造方法
US4894511A (en) * 1986-08-26 1990-01-16 Physical Sciences, Inc. Source of high flux energetic atoms
US4731338A (en) * 1986-10-09 1988-03-15 Amoco Corporation Method for selective intermixing of layered structures composed of thin solid films
US5003178A (en) * 1988-11-14 1991-03-26 Electron Vision Corporation Large-area uniform electron source
US4904866A (en) * 1988-11-17 1990-02-27 Applied Electron Corporation Wide area soft vacuum abnormal glow electron beam discharge hardening process
US5159170A (en) * 1991-04-26 1992-10-27 International Business Machines Corporation Grid structure for reducing current density in focussed ion beam
US5449989A (en) * 1992-07-31 1995-09-12 Correa; Paulo N. Energy conversion system
CA2126251A1 (en) 1994-02-18 1995-08-19 Ronald Sinclair Nohr Process of enhanced chemical bonding by electron beam radiation
US5465030A (en) * 1995-01-20 1995-11-07 The United States Of America As Represented By The Secretary Of The Army Trigger apparatus for spark gap dischargers
WO2007149460A2 (en) * 2006-06-20 2007-12-27 Chism William W Method of direct coulomb explosion in laser ablation of semiconductor structures
FR2978600B1 (fr) 2011-07-25 2014-02-07 Soitec Silicon On Insulator Procede et dispositif de fabrication de couche de materiau semi-conducteur

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4082958A (en) * 1975-11-28 1978-04-04 Simulation Physics, Inc. Apparatus involving pulsed electron beam processing of semiconductor devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3955091A (en) * 1974-11-11 1976-05-04 Accelerators, Inc. Method and apparatus for extracting well-formed, high current ion beams from a plasma source
US3950187A (en) * 1974-11-15 1976-04-13 Simulation Physics, Inc. Method and apparatus involving pulsed electron beam processing of semiconductor devices
US4301391A (en) * 1979-04-26 1981-11-17 Hughes Aircraft Company Dual discharge plasma device
US4335297A (en) * 1979-09-18 1982-06-15 Spire Corporation Electron beam processor
US4344019A (en) * 1980-11-10 1982-08-10 The United States Of America As Represented By The United States Department Of Energy Penning discharge ion source with self-cleaning aperture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4082958A (en) * 1975-11-28 1978-04-04 Simulation Physics, Inc. Apparatus involving pulsed electron beam processing of semiconductor devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/79 *

Also Published As

Publication number Publication date
FR2504727B1 (enExample) 1983-05-27
DE3262385D1 (en) 1985-03-28
JPS57186325A (en) 1982-11-16
EP0064003B1 (fr) 1985-02-20
EP0064003A1 (fr) 1982-11-03
US4527044A (en) 1985-07-02

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